Tritech-MOS-TMN6010D
| Part # | Tritech-MOS-TMN6010D |
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TMN6010D
-Channel
N
Enhancement Mosfet
General Description
General Features
• Low R
DS(ON)
I
V
DS
=60V
D
=
1
0 A
• RoHS and Halogen-Free Compliant
R
DS(ON)
=
6
5 m
W
(
typ
.
)
@
V
GS
=-
10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
TO-252-3L
D
S
D
G
Marking : 10N06
Absolute Maximum Ratings
(T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
Gate-source Voltage
V
DS
V
GS
60
±20
V
V
10
T
A
=25
℃
Drain Current
I
D
A
A
8
T
A
=100
℃
Pulsed Drain Current
A
Total Power Dissipation
B
I
DM
18
1.2
T
A
=25
℃
P
D
W
℃
0.45
-55
～
+150
T
A
=100
℃
Junction and Storage Temperature Range
T
J
,T
STG
Thermal resistance
Parameter
Symbol
Typ
Max
Units
Thermal Resistance Junction-to-Ambient
C
Steady-State
R
θJA
85
105
℃
/W
1/7
TMN6010D
-Channel
N
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise noted)
Parameter
Static Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250μA
60
–
–
–
–
V
V
DS
=60V, V
GS
=0V
1
Zero Gate Voltage Drain Current
I
DSS
μA
–
–
–
–
100
±100
2
V
DS
=60V, V
GS
=0V, Tj=150
℃
V
GS
= ±20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
=10V, I
D
=3A
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
nA
V
V
GS(th)
0.9
–
1.35
6
5
2
8
Static Drain-Source On-Resistance
R
DS(ON)
mΩ
75
0.85
2
V
GS
=4.5V, I
D
=3A
I
S
=3A, V
GS
=0V
–
–
–
–
92
1.2
–
Diode Forward Voltage
Gate resistance
V
SD
R
G
I
S
V
Ω
f=1MHz, Open drain
Maximum Body-Diode Continuous Current
–
10
A
Dynamic Parameters
Input Capacitance
Output Capacitance
C
iss
–
–
500
28
–
–
C
oss
V
DS
=30V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
C
rss
–
22
–
Q
g
Q
gs
Q
gd
Q
rr
t
rr
–
–
–
–
–
–
–
10
1.7
2.1
7
–
–
–
–
–
–
–
Gate-Source Charge
Gate-Drain Charge
V
GS
=10V, V
DS
=30
V
,
I
D
=3A
nC
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
Turn-on Rise Time
nC
ns
I
F
=3A, di/dt=100A/us
33
t
D(on)
t
r
t
D(off)
t
f
3.6
17.6
V
GS
=10V, V
DD
=30V, R
L
=20
Ω
R
GEN
=3
Ω
ns
Turn-off Delay Time
Turn-off fall Time
–
–
13
23
–
–
A. Repetitive
rating; pulse width limited by max. junction temperature.
B. P
d
is based on max. junction temperature, using junction-case thermal resistance.
C. The
value of R
θJA
is measured with the device mounted on the minimum recommend pad size, in the still air environment with T
A
=25
℃
.
The maximum allowed junction temperature of 150
℃
. The value in any given application depends on the user’s specific board design.
2/7
TMN6010D
-Channel
N
Enhancement Mosfet
Typical Electrical and Thermal Characteristics Diagrams
15
10
5
30
20
10
0
VGS= 10V
Tj=25
℃
VDS=5V
9V
8V
7V
6V
5V
4.5V
3.5V
3V
150
℃
25
℃
2.5V
0
0
1
2
3
4
5
0
1
2
3
4
5
Vgs
-Gate to Source Voltage (V)
VDS
-Drain to Source Voltage (V)
Figure 1.
Output Characteristics
Figure 2.
Transfer Characteristics
1000
100
10
10
VDS=30V
I
D
=3A
Ciss
Tj=25
℃
8
6
4
2
0
Coss
Crss
0
20
40
60
0
2
4
6
8
10
12
VDS
-Drain to Source Voltage (V)
Qg
-Total Gate Charge (nC)
Figure 3.
Capacitance Characteristics
Figure 4.
Gate Charge
250
200
150
100
50
2.5
2
Vgs=10V
1.5
1
ID=3A
Tj=25
℃
0.5
-75
-25
25
75
125
175
2
4
6
8
10
Tj
-Junction Temperature (
℃
)
VGS
-Gate to Source Voltage (V)
Figure 5.
On-Resistance vs Gate to Source Voltage
Figure 6.
Normalized On-Resistance
3
3/7
-Channel
N
Enhancement Mosfet
TMN6010D
10
100
90
80
150
℃
25
℃
1
VGS=4.5V
VGS=10V
70
60
Tj=25
℃
0.1
50
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
2
4
6
8
10
175
150
Vsd-
Source to Drain Voltage (V)
ID
-Drain Current (A)
Figure 7.
R
DS(on)
VS Drain Current
Figure 8.
Forward characteristics of reverse diode
1.15
1.1
1.05
1
1.4
I
D
=250uA
I
D
=250uA
1.2
1
0.8
0.6
0.4
0.2
0.95
0.9
-75
-25
25
75
125
-75
-25
25
75
125
175
Tj
-Junction Temperature (
℃
)
Tj
-Junction Temperature (
℃
)
Figure 9.
Normalized breakdown voltage
Figure 10.
Normalized Threshold voltage
1.6
4
3
2
1
1.2
0.8
0.4
0
0
-50
0
50
100
-50
0
50
100
150
Ta-
Ambient Temperature (
℃
)
Ta
-Ambient Temperature
(
℃
)
Figure 11.
Current dissipation
Figure 12.
Power dissipation
4/7
TMN6010D
-Channel
N
Enhancement Mosfet
100
10
1000
100
Operation in this area is
limited by R
DS(ON)
D=0.5
D=0.3
100us
300us
10
1
D=0.1
1ms
D=0.05
D=0.02
1
D=0.01
10ms
0.1
T
J
(ma
x
)=150
℃
T
A
=25
℃
Single Pulse
DC
Single Pulse
0.1
0.01
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Square Wave Pulse Durtion(S)
VDS
-Drain to Source Voltage (V)
Figure 13.
Maximum Transient Thermal Impedance
Figure 14.
Safe Operation Area
Test Circuits & Waveforms
EAS=1/2*L*IAS
2
Tp
VGS
L
IAS
Tp
A
D
ID
VDD
DUT
BVDSS
Vds
25
Ω
G
S
Tp
VDS
Figure A.
Unclamped Inductive Switching (UIS) Test Circuit & Waveform
5/7
TMN6010D
-Channel
N
Enhancement Mosfet
D
S
VGS (V)
10V
Qg
R2
R1
G
VGS
C1
VDD
Qgd
Qgs
VGS(pl)
D
S
DUT
R3
G
I
G
Charge (C)
Figure B.
Gate Charge Test Circuit & Waveform
VDS
90%
90%
90%
L
D
S
VDD
C2
DUT
C1
Vds
Rg
G
Vgs
10%
10%
VGS
10%
VR
t
f
t
D(off)
t
D(on)
t(on)
t
r
Id=VR/R shunt
t(off)
Figure C.
Resistive Switching Test Circuit & Waveform
D
I
SD
Rg
G
S
D
VDD
C1
C2
trr
DUT
G
S
25%I
RRM
Qrr
L
VR
I
RRM
Figure D.
Diode Recovery Test Circuit & Waveform
6/7
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
7/7
