Tritech-MOS-TMN6010SI

TMN6010SI  

-Channel  

N

Enhancement Mosfet  

General Features  

General Description  

V

DS

=60V I

D

=10A  

• Low R

DS(ON)  

R

DS(ON)

= 40mΩ  

@ V

GS

=10V  

(

Typ

.)  

• RoHS and Halogen-Free Compliant  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

SI:SOT-89-3L  

D

D

S

D

G

G

Marking: 10N06  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

60  

±20  

10  

V

V

Gate-Source Voltage  

T

C

= 25

℃

 

A

I

D  

Continuous Drain Current  

Pulsed Drain Current

note1  

T

C

= 100

℃  

6.8  

30  

A

I

DM  

EAS  

P

D  

A

Single Pulsed Avalanche Energy

note2  

6.3  

4

mJ  

W

Power Dissipation  

T

C

= 25

℃  

Thermal Resistance, Junction to Case  

3

R

θJC  

6

℃

/W  

℃

T

J

, T

STG

Operating and Storage

T

e

mperature Range  

-55 to +175  

1/5  

TMN6010SI  

-Channel  

N

Enhancement Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=60V, V

GS

=0V,  

V

DS

=0V, V

GS

=±20V  

60  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=15A  

V

GS

=4.5V, I

D

=10A  

1

–

1.6  

40  

45  

2.5  

49  

63  

V

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note3  

–

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

825  

49  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=25V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

41  

14  

V

DS

=30V, I

D

=4.5A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

2.9  

5.2  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

5

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=30V,I

D

=2A,  

R

L

=6.7Ω,R

G

=3Ω,  

V

GS

=10V  

2.6  

16.1  

2.3  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

–

10  

30  

1.2  

–

A

A

Current  

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=15A  

–

V

Voltage  

Body Diode Reverse Recovery Time  

T

J

=25

℃

,

I

F

=15A,  

35  

53  

ns  

nC  

Body Diode Reverse Recovery  

dI/dt=100A/μs  

Qrr  

–

Charge  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. EAS condition : T

J

=25

℃

,V

DD

=30V,V

G

=10V,L=0.5mH,Rg=25Ω,I

AS

=6.1A  

3. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

TMN6010SI  

-Channel  

N

Enhancement Mosfet  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

I

D

(A)  

40  

40  

10V  

4.5V  

4V  

30  

20  

10  

0

30  

20  

10  

T

J

=125

℃

 

25

℃  

V

GS

=3V  

V

GS

(V)  

3.0  

V

DS

(V)  

0

0

2.0  

4.0  

6.0  

8.0  

10  

0

1.0  

2.0  

4.0  

5.0  

1.0  

50  

Figure 4

: Body Diode Characteristics  

Figure 3:

On-resistance vs. Drain Current  

I

S

(A)  

R

DS(ON)

(mΩ)  

80  

1.0E+01  

1.0E+00  

1.0E-01  

1.0E-02  

60  

V

GS

=4.5V  

V

GS

=10V  

125

℃  

T

J

=25

℃  

40  

20  

1.0E-03  

1.0E-04  

1.0E-05  

I

D

(A)  

20  

V

SD

(V)  

0

0

0.0  

0.2  

0.4  

0.6  

0.8  

10  

30  

40  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

10  

8

V

DS

=30V  

I

D

=4.5A  

10

3  

C

iss  

6

10

2  

10

1  

C

oss  

C

rss  

4

2

0

V

DS

(V)  

Q

g

(nC)  

0

3

6

9

12  

15  

0

10  

20  

30  

40  

3/5  

TMN6010SI  

-Channel  

N

Enhancement Mosfet  

Figure 7:

Normalized Breakdown Voltage vs.  

Figure 8:

Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

V

BR(DSS)  

R

DS

(on)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Case Temperature  

I

D

(A

)

 

I

D

(A

)  

12  

100  

10μs  

10  

100μs  

1ms  

10  

1

8

6

10ms  

Limited by R

DS(on)  

100ms  

DC  

4

T

C

=25

℃  

Single pulse  

0.1  

0.01  

2

0

Tc (

℃

)  

75 100  

V

DS

(V)  

10  

0.1  

1

100  

0

25  

50  

125  

150  

175  

Figure.11:

Maximum Effective  

Transient Thermal Impedance, Junction-to-Case  

Zth

J-C

(

℃

/W)  

10

1  

10

0  

10

-1  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-2  

10

-3  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJC

+T

C  

T

P

(s)  

10

-2  

10

-6  

10

-5  

10

-4  

10

-3  

10

-1  

10

0  

10

1  

4/5  

Package Mechanical Data:SOT-89-3L  

5/5