Tritech-MOS-TMN6015SI
| Part # | Tritech-MOS-TMN6015SI |
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TMN6015SI
-Channel
N
Enhancement Mosfet
General Features
General Description
V
DS
=60V I
D
=15A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON)
= 30mΩ
@ V
GS
=10V
(
Typ
.)
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
SI:SOT-89-3L
D
S
D
G
Marking: 15N06
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
60
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
20
15
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
7.5
22
A
A
EAS
Single Pulse Avalanche Energy
3
22
mJ
A
I
AS
Avalanche Current
23
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
1.5
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
85
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
25
1/5
TMN6015SI
-Channel
N
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=60V, V
GS
= 0V,
V
DS
=0V, V
GS
= ±20V
60
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3A
1.0
1.6
30
36
2.5
40
50
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1148
58.5
49.4
20.3
3.7
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
DS
=30V, I
D
=2.5A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
5.3
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
7.6
20
15
24
–
–
–
–
ns
ns
ns
ns
V
DS
=30V, I
D
=5A,
R
G
=1.8Ω, V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
15
20
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=5A
–
V
Voltage
Body Diode Reverse Recovery Time
29
43
ns
nC
I
F
=5A, dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition : T
J
=25
℃
,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω,I
AS
=8.7A
3. Pulse
T
est: Pulse Width≤300μs, Duty Cycle≤0.5%
2/5
TMN6015SI
-Channel
N
Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
12
I
D
(A)
12
10V
4.5V
10
8
4V
9
T
J
=125
℃
6
6
25
℃
V
GS
=2V
4
3
2
V
GS
(V)
2.4
V
DS
(V)
0
0
0
0.5
1
1.5
2
2.5
0
0.8
1.6
3.2
4.0
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
I
S
(A)
R
DS(ON)
(mΩ)
45
1.0E+01
1.0E+00
1.0E-01
1.0E-02
40
35
V
GS
=4.5V
V
GS
=10V
125
℃
T
J
=25
℃
30
25
1.0E-03
20
15
1.0E-04
1.0E-05
I
D
(A)
V
SD
(V)
0.0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
10
3
10
2
10
1
10
8
V
DS
=30V
I
D
=2.5A
C
iss
6
4
C
oss
C
rss
2
0
Q
g
(nC)
V
DS
(V)
0
5
10
15
20
25
0
10
20
30
40
50
3/5
TMN6015SI
-Channel
N
Enhancement Mosfet
Figure 8:
Normalized on Resistance vs.
Figure 7:
Normalized Breakdown Voltage vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Ambient Temperature
I
D
(A
)
I
D
(A
)
6
10
2
5
4
3
10μs
10
1
10
0
100μs
1ms
10ms
Limited by R
DS(on)
100ms
DC
2
1
0
10
-1
10
-2
T
A
=25
℃
Single pulse
T
A
(
℃
)
V
DS
(V)
0.1
1
10
100
0
25
50
75
100
125
150
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Ambient
Zth
J-A
(
℃
/W)
10
2
10
1
10
0
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Single pulse
10
-1
10
-2
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJA
+T
A
T
P
(s)
10
-2
10
-6
10
-5
10
-4
10
-3
10
-1
10
0
10
1
4/5
Package Mechanical Data:SOT-89-3L
5/5
