Tritech-MOS-TMN6030D
| Part # | Tritech-MOS-TMN6030D |
Download  | Tritech-MOS-TMN6030D |
-Channel
N
TMN6030D
Enhancement Mosfet
General Description
General Features
V
DS
= 60V
I
D
=30A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
R
DS(ON)
=26m
Ω
(
Typ
.) @ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
S
G
Marking: 30N06
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
V
DSS
V
GSS
60
±20
V
V
Gate-Source Voltage
T
C
= 25
℃
30
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
T
C
= 100
℃
19
A
I
DM
EAS
P
D
80
A
Single Pulsed Avalanche Energy
note2
18
mJ
W
Power Dissipation
T
C
= 25
℃
27.7
5.4
Thermal Resistance, Junction to Case
R
θJC
℃
/W
℃
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +175
1/5
-Channel
N
TMN6030D
Enhancement Mosfet
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ. Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250μA
V
DS
=60V, V
GS
=0V,
V
DS
=0V, V
GS
=±20V
60
–
–
–
–
–
V
1.0
μA
nA
I
GSS
–
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
1.0
1.6
26
30
2.5
32
45
V
–
–
Static Drain-Source on-Resistance
R
DS(on)
mΩ
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
1148
58.5
49.4
20.3
3.7
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
=30V, I
D
=10A,
V
GS
=10V
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
5.3
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
7.6
20
15
24
–
–
–
–
ns
ns
ns
ns
V
DS
=30V, I
D
=20A,
R
G
=1.8Ω, V
GS
=10V
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
–
30
80
1.2
–
A
A
Current
I
SM
V
SD
trr
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
S
=20A
–
V
Voltage
Body Diode Reverse Recovery Time
29
43
ns
nC
I
F
=20A, dI/dt=100A/μs
Body Diode Reverse Recovery
Charge
Qrr
–
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition : T
J
=25
℃
, V
DD
=30V, V
G
=10V, L=0.5mH, Rg=25Ω, I
AS
=8.5A
3. Pulse
T
e
st: Pulse Width≤300μs, Duty Cycle≤0.5%
2/5
-Channel
N
TMN6030D
Enhancement Mosfet
Typical Performance Characteristics
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
30
20
10V
4.5V
4V
24
18
15
10
5
T
J
=125
℃
12
6
25
℃
V
GS
=2V
V
GS
(V)
2.4
V
DS
(V)
0
0
0
1
2
3
4
5
0
0.8
1.6
3.2
4.0
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
I
S
(A)
R
DS(ON)
(mΩ)
40
35
1.0E+01
1.0E+00
1.0E-01
1.0E-02
V
GS
=4.5V
V
GS
=10V
30
25
125
℃
T
J
=25
℃
20
15
1.0E-03
1.0E-04
1.0E-05
I
D
(A)
V
SD
(V)
10
0
0.0
0.2
0.4
0.6
0.8
1.0
5
10
15
20
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
10
3
10
2
10
1
10
8
V
DS
=30V
I
D
=10A
C
iss
6
4
C
oss
C
rss
2
0
Q
g
(nC)
V
DS
(V)
0
5
10
15
20
25
0
10
20
30
40
50
3/5
-Channel
N
TMN6030D
Enhancement Mosfet
Figure 7:
Normalized Breakdown Voltage vs.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
V
BR(DSS)
R
DS
(on)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
Tj (
℃
)
Tj (
℃
)
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 9:
Maximum Safe Operating Area
Figure 10:
Maximum Continuous Drain Current
vs. Case Temperature
I
D
(A
)
I
D
(A
)
36
10
3
30
Limited by R
DS(on)
10
2
10
1
24
18
10μs
100μs
1ms
10ms
100ms
DC
12
10
0
T
C
=25
℃
Single pulse
6
0
Tc (
℃
)
75 100
10
-1
V
DS
(V)
10
0.1
1
100
0
25
50
125
150
175
Figure.11:
Maximum Effective
Transient Thermal Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
10
-2
10
-3
Notes:
Single pulse
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
