Tritech-MOS-TMN6080D

TMN6080D  

-Channel  

N

Enhancement Mosfet  

General Features  

General Description  

V

DS

= 60V

 

I

D

= 80A  

• Low R  

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON)

=

6.8

m

Ω

(

typ

.) @ V

GS

= 10V  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

D:TO-252-3L  

D

D

S

G

Marking 80N06  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

VDS  

Value  

Unit  

V

Drain source voltage  

Gate source voltage  

60  

±20  

80  

VGS  

V

Continuous drain current

1)  

ID  

A

Pulsed drain current

2)  

ID, pulse  

P

D  

180  

A

Power dissipation

3)  

125  

W

Single pulsed avalanche energy

4)  

Operation and storage temperature  

Thermal resistance, junction-case  

Thermal resistance, junction-ambient

5)  

EAS  

30  

mJ  

℃

Tstg

，

Tj  

R

θ

JC  

R

θ

JA  

-55 to 150  

1

°C/W  

°C/W  

62  

1/5  

TMN6080D  

-Channel  

N

Enhancement Mosfet  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

T

e

st condition  

V

GS

=0

V

,

I

D

=250 μ

A  

V

DS

=V

GS

, I

D

=250 μ

A  

V

GS

=10

V

,

I

D

=20 A  

V

GS

=4.5

V

,

I

D

=10 A  

V

GS

=20 V  

Min.  

60  

Typ.  

71  

Max.  

Unit  

V

BV

DSS  

Drain-source breakdown voltage  

Gate threshold voltage  

V

GS(th)  

1.0  

2.0  

2.5  

9.3  

V

R

DS(ON)  

R

DS(ON)  

Drain-source on-state resistance  

Drain-source on-state resistance  

m

Ω  

m

Ω  

6.8  

9.2  

11  

100  

I

GSS  

Gate-source leakage current  

nA  

V

GS

=-20 V  

-100  

1

I

DSS  

C

iss  

Drain-source leakage current  

Input capacitance  

V

DS

=40

V

,

V

GS

=0 V  

μ

A  

pF  

pF  

V

GS

=0

V

,

 

V

DS

=50

V

,  

1182.1  

199.5  

ƒ=100 kHz  

C

oss  

Output capacitance  

C

rss  

Reverse transfer capacitance  

T

u

rn-on delay time  

4.1  

pF  

ns  

t

d(on)  

17.9  

V

GS

=10

V

,  

V

DS

=50

V

,  

R

G

=2 Ω,  

I

D

=10 A  

t

r  

t

d(off)  

t

f  

Rise time  

4.0  

34.9  

5.5  

ns  

ns  

ns  

nC  

nC  

nC  

V

T

u

rn-off delay time  

Fall time  

Q

g  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

Gate plateau voltage  

Diode forward current  

Pulsed source current  

18.4  

3.3  

I

D

=10 A,  

V

DS

=50

V

,  

V

GS

=10 V  

Q

gs  

Q

gd  

V

plateau  

I

S  

3.1  

2.8  

80  

A

V

GS

<V

th  

I

SP  

180  

V

SD  

t

rr  

Diode forward voltage  

Reverse recovery time  

I

S

=20 A, V

GS

=0 V  

I

S

=10 A,

 

di/dt=100  

A/

μ

s  

1.3  

V

ns  

nC  

A

41.8  

36.1  

1.4  

Q

rr  

I

rrm  

Reverse recovery charge  

Peak reverse recovery current  

Note  

1) Calculated

 

continuous current based on maximum allowable junction temperature.  

2) Repetitive

 

rating; pulse width limited by max. junction temperature.  

3) Pd

 

is based on max. junction temperature, using junction-case thermal resistance.  

4) V

DD

=50

V

,

R

G

=50 Ω,

L=0.3 mH, starting T

j

=25 ℃.  

5) The

 

value of R

θ

JA

is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still  

air environment with T

a

=25 ℃.  

2/5  

TMN6080D  

-Channel  

N

Enhancement Mosfet  

Electrical Characteristics Diagrams  

T

j

= 25 ℃  

V

DS

= 10 V  

60  

40  

20  

0

100  

T

j

= 25 ℃  

V

GS

= 3 V  

3.5 V  

5 V  

10  

1

0.1  

0

2

4

6

8

10  

0

1

2

3

4

5

6

V

DS

, Drain-source voltage (V)  

V

GS

, Gate-source voltage(V)  

Figure 1, Typ. output characteristics  

Figure 2, Typ. transfer characteristics  

V

DS

, Drain-source voltage (V)  

Figure 3, Typ. capacitances  

Figure 4, Typ. gate charge  

Figure 5, Drain-source breakdown voltage  

Figure 6, Drain-source on-state resistance  

3/5  

TMN6080D  

-Channel  

N

Enhancement Mosfet  

20.0m  

T

j

= 25 ℃  

10  

16.0m  

12.0m  

8.0m  

V

GS

=3.5 V  

5 V  

1

10 V  

4.0m  

0.4  

0.8  

1.2  

1.6  

8

16  

24  

32  

40  

V

SD

, Source-Drain voltage (V)  

I

D

, Drain current(A)  

Figure 7, Forward characteristic of body diode  

Figure 8, Drain-source on-state resistance  

V

DS  

100  

90%  

10



s  

100



s  

10  

R

DS(ON)

Limited  

1ms  

1

10ms  

0.1  

10%  

DC  

V

GS  

0.01  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

0.1  

1

10  

100  

V

DS

, Drain-source voltage(V)  

Figure 9, Safe operation area T

C

=25

℃  

Fig.10 Switching Time Waveform  

1

2

BV

DSS  

BV

DSS

-V

DD  

EAS=  

BV

DSS  

L x I

AS

2

x  

V

DD  

I

AS  

V

GS  

Fig.11 Unclamped Inductive Switching Waveform  

4/5  

Package Information : TO-252-3L  

Dimensions In Millimeters  

Dimensions In Inches  

Min.  

Symbol  

Min.  

2.200  

0.000  

0.660  

0.460  

6.500  

5.100  

Max.  

2.400  

0.127  

0.860  

0.580  

6.700  

5.460  

Max.  

0.094  

0.005  

0.034  

0.023  

0.264  

0.215  

A

A1  

b

0.087  

0.000  

0.026  

0.018  

0.256  

0.201  

c

D

D1  

D2  

E

4.830 TY

P

.  

0.190 TY

P

.  

6.000  

2.186  

9.800  

6.200  

2.386  

0.236  

0.086  

0.386  

0.244  

0.094  

0.409  

e

L

10.400  

L1  

L2  

L3  

L4  

Φ

θ

2.900 TY

P

.  

1.600 TY

P

.  

0.114 TY

P

.  

0.063 TY

P

.  

1.400  

1.700  

0.055  

0.067  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.350 TY

P

.  

0.211 TY

P

.  

5/5