Tritech-MOS-TMN6080NF

-Channel  

N

TMN6080NF  

Enhancement Mosfet  

General Features  

General Description  

V

DS

= 60V

 

I

D

= 80A  

• Low R  

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON)

=

5.2

m

Ω

(

typ

.) @ V

GS

= 10V  

Applications  

100% UIS Tested  

100% R

g

Tested  

• Load switch  

• PWM  

NF:DFN5x6-8L  

Marking:80N06F  

Absolute Maximum Ratings

(T

C

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

60  

±25  

V

V

Gate-Source Voltage  

T

C

= 25

℃

 

80  

A

I

D  

Continuous Drain Current  

Pulsed Drain Current

note1  

T

C

= 100

℃  

52  

A

I

DM  

EAS  

P

D  

320  

A

Single Pulsed Avalanche Energy

note2  

169  

mJ  

W

Power Dissipation  

T

C

= 25

℃  

108  

Thermal Resistance, Junction to Case  

℃

/W  

R

θJC  

1.4  

T

J

, T

STG

Operating and Storage

T

e

mperature Range  

-55 to +175  

℃

1/5  

-Channel  

N

TMN6080NF  

Enhancement Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ. Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

=250μA  

V

DS

=60V, V

GS

=0V,  

V

DS

=0V, V

GS

=±20V  

60  

–

–

–

–

–

V

1.0  

μA  

nA  

I

GSS  

–

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=30A  

2

–

3

4

V

Static Drain-Source on-Resistance  

R

DS(on)  

7.2  

8.6  

mΩ  

note3  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

4136  

286  

257  

90  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

=30V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

T

o

tal Gate Charge  

V

DS

=30V, I

D

=30A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

9

18  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

9

7

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

=30V, I

D

=30A,  

R

G

=1.8Ω, V

GS

=10V  

40  

15  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

–

–

80  

320  

1.2  

–

A

A

Current  

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=30A  

–

V

Voltage  

Body Diode Reverse Recovery Time  

33  

46  

ns  

nC  

I

F

=30A, dI/dt=100A/μs  

Body Diode Reverse Recovery  

Charge  

Qrr  

–

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. EAS condition : T

J

=25

℃

, V

DD

=30V, V

G

=10V, L=0.5mH, Rg=25Ω, I

AS

=26A  

3. Pulse

T

e

st: Pulse Width≤300μs, Duty Cycle≤0.5%  

2/5  

-Channel  

N

TMN6080NF  

Enhancement Mosfet  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

I

D

(A)  

I

D

(A)  

40  

30  

25  

20  

10V  

4.5V  

4V  

30  

20  

10  

0

T

J

=125

℃

 

15  

10  

5

25

℃  

V

GS

=3V  

V

GS

(V)  

4.5  

V

DS

(V)  

0

0

0.5  

1.0  

1.5  

2.0  

2.5  

0

1.5  

3.0  

6.0  

7.5  

1.0  

50  

Figure 4

: Body Diode Characteristics  

Figure 3:

On-resistance vs. Drain Current  

I

S

(A)  

R

DS(ON)

(mΩ)  

8

6

1.0E+01  

1.0E+00  

1.0E-01  

1.0E-02  

V

GS

=10V  

125

℃  

T

J

=25

℃  

4

2

1.0E-03  

1.0E-04  

1.0E-05  

I

D

(A)  

20  

V

SD

(V)  

0

0

0.0  

0.2  

0.4  

0.6  

0.8  

10  

30  

40  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

V

GS

(V)  

C(pF)  

10  

8

V

DS

=30V  

I

D

=30A  

10

4  

C

iss  

6

10

3  

10

2  

C

oss  

4

2

0

C

rss  

V

DS

(V)  

Q

g

(nC)  

0

18  

36  

54  

72  

90  

0

10  

20  

30  

40  

3/5  

-Channel  

N

TMN6080NF  

Enhancement Mosfet  

Figure 7:

Normalized Breakdown Voltage vs.  

Figure 8:

Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

V

BR(DSS)  

R

DS

(on)  

2.5  

1.3  

1.2  

2.0  

1.5  

1.1  

1.0  

1.0  

0.5  

0.9  

0

Tj (

℃

)  

Tj (

℃

)  

50  

-100  

-50  

0

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Case Temperature  

I

D

(A

)

 

I

D

(A

)  

90  

1000  

75  

10μs  

100  

10  

1

60  

45  

100μs  

1ms  

Limited by R

DS(on)  

10ms  

100ms  

DC  

30  

T

C

=25

℃  

Single pulse  

15  

0

Tc (

℃

)  

75 100  

V

DS

(V)  

10  

0.1  

0.1  

1

100  

0

25  

50  

125  

150  

175  

Figure.11:

Maximum Effective  

Transient Thermal Impedance, Junction-to-Case  

Zth

J-C

(

℃

/W)  

10

1  

10

0  

10

-1  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-2  

10

-3  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJC

+T

C  

T

P

(s)  

10

-2  

10

-6  

10

-5  

10

-4  

10

-3  

10

-1  

10

0  

10

1  

4/5  

Package Mechanical Data:DFN5x6-8L  

Common  

Symbol  

mm  

Inch  

Mim  

1.03  

0.34  

0.824  

4.80  

4.11  

4.80  

5.95  

5.65  

1.60  

Max  

1.17  

0.48  

0.0970  

5.40  

4.31  

5.00  

6.15  

5.85  

/

Min  

Max  

0.0461  

0.0189  

0.082  

0.2126  

0.1697  

0.1969  

0.2421  

0.2303  

/

A

b

c

0.0406  

0.0134  

0.0324  

0.1890  

0.1618  

0.1890  

0.2343  

0.2224  

0.0630  

D

D1  

D2  

E

E1  

E2  

e

1.27 BSC  

0.05 BSC  

L

0.05  

0.38  

0.38  

3.30  

/

0.25  

0.50  

0.50  

3.50  

0.18  

0.0020  

0.0150  

0.0150  

0.1299  

/

0.0098  

0.0197  

0.0197  

0.1378  

0.0070  

L1  

L2  

H

I

5/5