Tritech-MOS-TMP2030DF

-Channel Enhancement

 

Mosfet  

P

TMP2030DF  

General Description  

General Features  

• Low R

DS(ON)  

V

DS

=-20V I

D

=-20A  

• RoHS and Halogen-Free Compliant  

@ V

GS

=-4.5V  

R

DS(ON)

= 15m

W

(

typ

.)  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

DF:DFN3x3_8L  

Marking 30P02  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Drain-Source Voltage  

Max.  

Units  

V

DSS  

V

GSS  

-20  

±12  

V

V

Gate-Source Voltage  

T

A

= 25

℃

 

-20  

A

I

D  

Continuous Drain Current  

T

A

= 100

℃  

-12  

A

I

DM  

P

D  

Pulsed Drain Current

note1  

Power Dissipation  

-28  

A

T

A

= 25

℃  

5

W

℃

/W  

℃

R

θJA  

Thermal Resistance, Junction to Ambient  

62.5  

-55 to +150  

T

J

, T

STG

Operating and Storage

T

e

mperature Range  

1/5  

-Channel Enhancement

 

Mosfet  

P

TMP2030DF  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

= -250μA  

V

DS

= -20V, V

GS

=0V,  

V

DS

=0V, V

GS

= ±12V  

-20  

–

–

–

–

V

–

–

-1  

μA  

nA  

I

GSS  

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

= -250μA  

V

GS

= -4.5V, I

D

= -7A  

V

GS

= -2.5V, I

D

= -5A  

-0.4  

-0.7  

15  

-1.0  

20  

V

–

–

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

note2  

21.  

32  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

2000  

242  

231  

15.3  

2.2  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

= -10V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

V

DS

= -10V, I

D

= -3A,  

V

GS

= -4.5V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

4.4  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

10  

31  

28  

8

–

–

–

–

ns  

ns  

ns  

ns  

V

DD

= -10V, I

D

= -7A,  

V

GS

= -4.5V,  

R

GEN

=2.5Ω  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

-20  

-28  

A

A

V

Current  

I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  

Drain to Source Diode Forward  

V

GS

=0V, I

S

= -7A  

V

SD  

-0.8  

-1.2  

Voltage  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤2%  

2/5  

-Channel Enhancement

 

Mosfet  

P

TMP2030DF  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

-I

D

(A)  

-I

D

(A)  

30  

30  

T

A

=-55

℃

 

25

℃  

4.5V  

3V  

25  

20  

15  

10  

0

25  

20  

15  

10  

0

125

℃  

2V  

2.5V  

1.5V  

-V

GS

(V)  

1.0  

-V

DS

(V)  

0

1

2

3

4

5

0

0.5  

1.5  

2.0  

Figure 3:

On-resistance vs. Drain Current  

Figure 4

: Body Diode Characteristics  

-I

S

(A)  

R

DS(ON)

(mΩ)  

32  

10  

28  

24  

V

GS

=-2.5V  

V

GS

=-4.5V  

T

J

=150

℃  

T

J

=-25

℃  

20  

16  

12  

8

T

J

=-50

℃  

1

-I

D

(A)  

V

SD

(V)  

0.6 0.8  

0.1  

0.0  

4

0

0.2  

0.4  

1.0  

1.2  

1.4  

2

4

6

8

10  

12  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

-V

GS

(V)  

C(pF)  

10

4  

5

4

3

V

DS

=-10V  

I

D

=-3A  

C

iss  

10

3  

10

2  

C

oss  

C

rss  

2

1

0

-V

DS

(V)  

9

Q

g

(nC)  

10

1  

0

3

6

9

12  

15  

18  

0

3

6

12  

15  

18  

3/5  

-Channel Enhancement

 

Mosfet  

P

TMP2030DF  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

R

DS

(on)  

V

BR(DSS)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Ambient Temperature  

-I

D

(A

)

 

-I

D

(A

)  

7.5  

100  

6

4.5  

3

10  

10μs  

100μs  

1ms  

Limited by R

DS(on)  

1

T

A

=25

℃  

Single pulse  

1.5  

0

DC  

T

A

(

℃

)  

-V

DS

(V)  

0.1  

0.1  

1

10  

0

25  

50  

75  

100  

125  

150  

Figure.11:

Maximum Effective Transient  

Thermal Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

2  

10

1  

10

0  

D=0.5  

D=0.2  

t1  

D=0.1  

t2  

D=0.05  

D=0.02  

D=0.01  

Single pulse  

10

-1  

10

-2  

Notes:  

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJA

+T

A  

T

P

(s)  

10

-1  

10

-4  

10

-3  

10

-2  

10

0  

10

1  

10

2  

4/5  

Package Mechanical Data:DFN3x3-8L  

Common  

mm  

Symbol  

Mim  

0.70  

/

Nom  

0.75  

/

Max  

0.85  

0.05  

0.40  

0.25  

3.45  

3.25  

2.65  

3.45  

3.20  

1.94  

0.65  

0.77  

0.30  

0.70  

0.89  

0.50  

0.20  

0.13  

14  

A

A1  

b

c

D

D1  

D2  

E

E1  

E2  

E3  

E4  

E5  

e

0.20  

0.10  

3.15  

3.00  

2.29  

3.15  

2.90  

1.54  

0.28  

0.37  

0.10  

0.60  

0.59  

0.30  

0.06  

0

0.30  

0.152  

3.30  

3.15  

2.45  

3.30  

3.05  

1.74  

0.48  

0.57  

0.20  

0.65  

0.69  

0.40  

0.125  

0.075  

12  

K

L

L1  

t

Φ

10  

5/5