Tritech-MOS-TMP2050AD
| Part # | Tritech-MOS-TMP2050AD |
Download  | Tritech-MOS-TMP2050AD |
-Channel
P
TMP2050AD
Enhancement Mosfet
General Description
General Features
V
DS
=-20V I
=-48
• Low R
DS(ON)
A
D
• RoHS and Halogen-Free Compliant
=-4.5V
=
13m
W
(
typ
.)@
V
GS
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 50P02
Absolute Maximum Ratings (TC=25
℃
unless otherwise noted)
Symbol
V
DSS
Parameter
Rating
-20
Unit
Drain-Source Voltage
G
a
t
e-Source Voltage
V
V
GSS
±
12
–
48
T
A
=25
°
C
T
A
=70
°
C
a
I
D
Continuous Drain Current (V
GS
=-4.5V)
Pulsed Drain Current (V
GS
=-4.5V)
Continuous Drain Current
–
36
a
I
DM
-44
A
T
C
=25
°
C
-35
c
I
D
T
C
=100
°
C
-22
a
I
S
Diode Continuous Forward Current
M
a
ximum Junction Temperature
A
v
alanche Current, Single pulse
A
v
alanche Energ
y
,
S
ingle pulse
Storage
T
e
mperature Range
-10
T
J
150
-12
°
C
A
d
I
AS
L=0.5mH
L=0.5mH
d
E
AS
36
mJ
°
C
T
STG
-55 to 150
3.1
T
A
=25
°
C
T
A
=70
°
C
T
C
=25
°
C
T
C
=100
°
C
a
P
D
M
a
ximum Power Dissipation
M
a
ximum Power Dissipation
2
W
31.25
12.5
40
c
P
D
t
≤
10s
a,b
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
°
C/W
°
C/W
R
θ
J
A
S
t
e
ady State
80
c
4
R
θ
JC
Note *
：
Package limited.
a
：
Su
r
face Mounted on 1in
2
pad area, t
≤
10sec.
b
：
Maximum under Steady State conditions is 75
°
C/W.
e c
：
The power dissipation P
D
is based on T
J(MAX)
= 150
o
C, and it is useful for reducing junction-to-case thermal
resistance (R
θ
J
C
) when additional heat sink is used.
d
：
UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC)
1/8
-Channel
P
TMP2050AD
Enhancement Mosfet
Electrical Characteristics
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
-20
–
–
–
V
V
GS
=0V, I
D
S
=-250
µ
A
V
DS
=-16V, V
GS
=0V
–
-1
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=85
°
C
–
-30
-1
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
-0.5
-0.7
–
V
V
DS
=V
GS
, I
DS
=-250
µ
A
V
GS
=
±
12V, V
D
S
=0V
V
GS
=-4.5V, I
DS
=-11A
–
–
–
–
±
10
17
25
45
µ
A
13
18
26
e
R
DS(ON)
Drain-Source On-state Resistance
V
GS
=-2.5V, I
DS
=-6A
V
GS
=-1.8V, I
DS
=-1A
m
Ω
Diode Characteristics
e
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=-1A, V
GS
=0V
–
–
–
-0.7
63
-1
–
V
f
t
rr
ns
nC
I
SD
=-11A, dl
SD
/dt=100A/
µ
s
f
Q
rr
54
–
Dynamic Characteristics
f
C
iss
C
o
s
s
C
rss
t
d(ON)
t
r
Input Capacitance
–
–
–
–
–
–
–
1620
320
290
9
–
–
–
–
–
–
–
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
pF
ns
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=-10V, R
L
=10
Ω
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=
6
Ω
13
t
d
(
OFF)
Turn-off Delay Time
t
f
Turn-off Fall Time
Gate Charge Characteristics
f
26
167
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
25
1.6
11
–
–
–
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-11A
nC
Note e
：
Pulse test; pulse width
≤
300
µ
s, duty cycle
≤
2%.
Note f
：
Guaranteed by design, not subject to production testing.
2/8
-Channel
P
TMP2050AD
Enhancement Mosfet
Typical Operating Characteristics
Power Dissipation
Drain Current
5
0
4
5
4
0
3
5
3
0
2
5
20
15
10
35
30
25
20
15
10
5
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=-4.5V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
3
1
100
10
1
Duty = 0.5
0.2
0.1
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
1ms
10ms
DC
Single Pulse
T
C
=25
o
C
R
θ
JC
:4
o
C/W
0.1
1
10
50
1E-6
1E-5
1E-4
1E-3
0.01
0.1
-V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
3/8
-Channel
P
TMP2050AD
Enhancement Mosfet
Output Characteristics
Drain-Source On Resistance
50
40
30
20
10
0
60
50
40
30
20
10
0
V
GS
=-2.5,-3,-4,-5,-6,
-7,-8,-9,-10V
V
GS
=-1.8V
-2V
V
GS
=-2.5V
V
GS
=-4.5V
-1.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
8
16
24
32
40
-V
DS
– Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
60
50
40
30
20
10
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=-250
µ
A
I
DS
=-11A
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
4/8
-Channel
P
TMP2050AD
Enhancement Mosfet
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
10
V
GS
= -4.5V
I
DS
= -11A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 13m
Ω
0.1
0.0
-50 -25
0
25 50 75
100 125 150
0.3
0.6
0.9
1.2
1.5
T
j
– Junction Temperature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
3000
2700
2400
2100
1800
1500
1200
900
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=-10V
I
DS
=-11A
Ciss
600
Crss
Coss
300
0
0
10
20
30
40
50
0
4
8
12
16
20
-V
DS
– Drain – Source Voltage (V)
Q
G
– Gate Charge (nC)
5/8
-Channel
P
TMP2050AD
Enhancement Mosfet
Transfer Characteristics
35
30
25
20
15
10
5
T
j
=125
o
C
T
j
=25
o
C
T
j
=-55
o
C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
– Gate-Source Voltage (V)
6/8
-Channel
P
TMP2050AD
Enhancement Mosfet
Avalanche Test Circuit and Waveforms
V
DS
L
t
AV
DUT
E
AS
V
DD
R
G
V
DD
I
AS
tp
I
L
V
DS
0.01
Ω
t
p
V
DSX(SUS)
Switching Time Test Circuit and Waveforms
V
DS
R
D
t
d
(off)
t
f
t
d
(on)
t
r
DUT
V
GS
10%
V
GS
R
G
V
DD
tp
90%
V
DS
7/8
Package Mechanical Data:
TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
2.200
0.000
0.660
0.460
6.500
5.100
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
8/8
