Tritech-MOS-TMP3005HI
| Part # | Tritech-MOS-TMP3005HI |
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TMP3005HI
P-Channel Enhancement Mosfet
General Features
General Description
V
DS
= -30V
I
D
=-4.6A
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
(
Typ
.)
R
DS(ON)
= 40mΩ
@ V
GS
=10V
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
I:SOT-23
D
S
G
Marking: A79T
Absolute Maximum Ratings
(T
A
=25
℃
unless otherwise specified)
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
-30
±
20
V
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
2
-4.6
A
-3.6
A
-16
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
Total Power Dissipation
3
Storage
T
e
mperature Range
Operating Junction Temperature Range
1.4
W
W
℃
℃
0.9
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
Max.
105
—
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
—
—
R
θJA
1/5
TMP3005HI
P-Channel Enhancement Mosfet
Electrical Characteristics
(T
J
=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static Characteristics
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
GS
= 0V, I
D
= –
250μA
V
DS
= -30V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS,
I
D
= –
250μA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5V, I
D
= -3A
-30
–
–
–
-1
V
μA
nA
V
–
–
I
GSS
–
±100
-2.5
60
V
GS(th)
Gate-Source Threshold voltage
-1
–
-1.5
40
50
Drain-Source on-State Resistance
3
R
DS(on)
mΩ
–
85
Dynamic Characteristics
4
Input Capacitance
C
iss
C
oss
C
rss
–
–
–
530
70
–
–
–
V
GS
= 0V , V
DS
= -15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
4
Total Gate Charge
pF
56
Q
g
Q
gs
Q
gd
t
d(on)
t
r
–
–
–
–
–
–
–
6.8
1.0
1.4
14
–
–
–
–
–
–
–
V
GS
= -10V, V
DS
= -15V,
I
D
= -4.1A
Gate−Source Charge
Gate−Drain Charge
Turn-on Delay Time
Rise Time
nC
ns
61
V
GS
= -10V, V
DS
= -15V ,
R
L
= 15Ω,R
GEN
= 2.5Ω
t
d(off)
t
f
Turn-off Delay time
Fall Time
19
10
Source-Drain Body Diode Characteristics
Diode Forward Voltage
3
I
S
= -4.1A, V
GS
= 0V
–
–
–
–
-1.2
-4.6
V
A
V
SD
I
S
Continuous Source Current
Notes:
1. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the
user’s specific board design.
3.
Pulse Test: Pulse width≤300μs, duty cycle≤2%.
4. This value is guaranteed by design hence it is not included in the production test.
2/5
TMP3005HI
P-Channel Enhancement Mosfet
Typical Characteristics
10
10
V
GS
= -10V
V
DS
= -3V
V
GS
= -4.5V
8
6
4
2
0
8
6
4
2
0
V
GS
= -3.5V
V
GS
= -3V
V
GS
= -2.5V
0
1
2
3
4
5
0
2
4
G
a
1
te−source voltage
-V
G
S
3
(V)
Drain−source voltage
-V
DS
(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
10
250
200
150
100
50
I
D
= -4.1A
1
0
0.1
0
3
6
9
12
15
0.2
0.4
0.6
0.8
1.0
1.2
Gate−source voltage
-V
GS
(V)
Source−drain voltage
-V
SD
(V)
Figure 3. Forward Characteristics of Reverse
Figure 4. R
DS(ON)
vs. V
GS
2.5
100
80
60
40
20
0
2.0
1.5
1.0
0.5
0.0
V
GS
= -4.5V
GS
= -10V
V
0
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
Temperature T
j
(
°
C
)
Drain current -I
D
(A)
Figure 5. R
DS(ON)
vs. I
D
Figure 6. Normalized R
DS(on)
vs. Temperature
3/5
TMP3005HI
P-Channel Enhancement Mosfet
10000
1000
100
Ciss
Coss
Crss
10
F=1.0MHz
1
0
5
10
15
20
25
30
Drain-
source voltage
-V
DS
（
V
）
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
4/5
Package Mechanical Data:SOT-23
Dimensions in Millimeters
Symbol
MIN.
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
c
D
E
E1
e
0.950TYP
e1
L
1.800
2.000
0.550REF
L1
θ
0.300
0°
0.500
8°
5/5
