Tritech-MOS-TMP4005I

-Channel  

P

TMP4005I  

Enhancement Mosfet  

General Description  

General Features  

V

DS

=-40V,I

D

=-5.0A  

• Low R

DS(ON)  

• RoHS and Halogen-Free Compliant  

R

DS(ON)

=

47

m

W

(

Typ

.

)

@ V

GS

=-1

0V  

Applications  

• Load switch  

• PWM  

100% UIS Tested  

100% R

g

Tested  

I:SOT-23  

D

S

G

Marking: 5P04  

Absolute Maximum Ratings

：

(T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Rating  

Units  

V

DS  

V

GS  

Drain-Source Voltage  

Gate-Sou

r

ce Voltage  

-40  

±

20  

V

V

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

Continuous Drain Current  

Continuous Drain Current  

Pulsed Drain Current

2  

-5  

A

-3.6  

A

-22  

A

P

D

@T

A

=25

℃  

P

D

@T

A

=70

℃  

T

STG  

Total Power Dissipation

3  

Total Power Dissipation

3  

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

2.0  

W

W

℃

℃

1.5  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

R

θ

JA  

Parameter  

Typ.  

Max.  

65  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-Ambient

1  

Thermal Resistance Junction-Ambient

1

(t

≤

10s)  

—  

—  

R

θ

JA  

48  

1/5  

-Channel  

P

TMP4005I  

Enhancement Mosfet  

Electrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max. Units  

Off Characteristic  

V

(BR)DSS  

I

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

V

GS

=0V, I

D

= -250μA  

V

DS

= -40V, V

GS

=0V  

V

DS

=0V, V

GS

= ±20V  

-40  

–

–

–

–

V

–

–

-1  

μA  

nA  

I

GSS  

±100  

On Characteristics  

V

GS(th)

Gate Threshold Voltage  

V

DS

=V

GS

, I

D

= -250μA  

V

GS

= -10V, I

D

= -5A  

V

GS

= -4.5V, I

D

= -4A  

-1.0  

-1.7  

47  

-2.5  

55  

V

–

–

Static Drain-Source on-Resistance  

R

DS(on)  

mΩ  

Note2  

62  

88  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

–

–

–

–

–

–

869  

94  

–

–

–

–

–

–

pF  

pF  

pF  

nC  

nC  

nC  

V

DS

= -20V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

69  

17.3  

3.2  

4.3  

V

DS

= -20V, I

D

= -4A,  

V

GS

= -10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

–

–

–

–

10.3  

4.3  

–

–

–

–

ns  

ns  

ns  

ns  

V

DS

= -20V, I

D

= -4A,  

V

GS

= -10V, R

GEN

=3Ω  

39  

46.5  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous Drain to Source Diode Forward  

I

S  

–

–

–

–

–

– 5  

A

A

V

Current  

I

SM  

Maximum Pulsed Drain to Source Diode Forward Current  

-22  

-1.2  

Drain to Source Diode Forward  

V

GS

=0V, I

S

= -5.5A  

Voltage  

V

SD  

-0.8  

trr  

Reverse Recovery Time  

–

–

17  

–

–

ns  

V

GS

=0V, I

S

= -5.5A,  

di/dt=100A/μs  

Qrr  

Reverse Recovery Charge  

11.5  

nC  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction

T

e

mperature  

2. Pulse

T

est: Pulse Width≤300μs, Duty Cycle≤2%  

2/5  

-Channel  

P

TMP4005I  

Enhancement Mosfet  

Typical Performance Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure1:

Output Characteristics  

-I

D

(A)  

-I

D

(A)  

25  

25  

-10V  

T

C

=-55

℃

 

25

℃  

-4.5V  

20  

15  

10  

5

20  

-3V  

15  

125

℃  

-2V  

10  

5

V

GS

=-1V  

-V

GS

(V)  

1.5 2.0 2.5 3.0 3.5 4.0  

-V

DS

(V)  

0

0

0

2

4

6

8

10  

0

0.5 1.0  

4.5  

Figure 3:

On-resistance vs. Drain Current  

Figure 4

: Body Diode Characteristics  

-I

S

(A)  

R

DS(ON)

(mΩ)  

10  

65  

60  

V

GS

=-4.5V  

V

GS

=-10V  

55  

50  

T

J

=150

℃  

T

J

=-25

℃  

T

J

=-50

℃  

1

45  

40  

35  

30  

-I

D

(A)  

6

V

SD

(V)  

0.6 0.8  

0.1  

0.0  

0.2  

0.4  

1.0  

1.2  

1.4  

0

2

4

8

10  

12  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

-V

GS

(V)  

C(pF)  

10  

8

10

4  

V

DS

=-20V  

I

D

=-4A  

10

3  

C

iss  

6

C

oss  

C

rss  

10

2  

10

1  

10

0  

4

2

0

-V

DS

(V)  

15  

Q

g

(nC)  

0

3

6

9

12  

15  

18  

0

5

10  

20  

25  

30  

3/5  

-Channel  

P

TMP4005I  

Enhancement Mosfet  

Figure 8:

Normalized on Resistance vs.  

Figure 7:

Normalized Breakdown Voltage vs.  

Junction Temperature  

Junction Temperature  

R

DS

(on)  

V

BR(DSS)  

2.5  

1.3  

1.2  

1.1  

1.0  

2.0  

1.5  

1.0  

0.5  

0.9  

Tj (

℃

)  

Tj (

℃

)  

0

-100  

-50  

0

50  

100  

150  

200  

-100  

-50  

0

50  

100  

150  

200  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current  

vs. Ambient Temperature  

-I

D

(A

)

 

-I

D

(A

)  

7

10

2  

10

1  

6

5

4

3

2

10μs  

100μs  

1ms  

DC  

10

0  

Limited by R

DS(on)  

10

-1  

10

-2  

T

A

=25

℃  

Single pulse  

-V

DS

(V)  

1

0

T

A

(

℃

)  

0.01  

0.1  

1

10  

100  

0

25  

50  

75  

100  

125  

150  

Figure.11:

Maximum Effective Transient  

Thermal Impedance, Junction-to-Ambient  

Zth

J-A

(

℃

/W)  

10

2  

10

1  

10

0  

10

-1  

10

-2  

D=0.5  

D=0.2  

D=0.1  

D=0.05  

D=0.02  

D=0.01  

t1  

t2  

Notes:  

Single pulse

 

1.Duty factor D=t1/t2  

2.Peak T

J

=P

DM

*Z

thJA

+T

A  

T

P

(s)  

10

-1  

10

-4  

10

-3  

10

-2  

10

0  

10

1  

10

2  

4/5  

Package Mechanical Data:SOT-23  

Dimensions in Millimeters  

Symbol  

MIN.  

MAX.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

A

A1  

A2  

b

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

c

D

E

E1  

e

0.950TYP  

e1  

L

1.800  

2.000  

0.550REF  

L1  

θ

0.300  

0°  

0.500  

8°  

5/5