Tritech-MOS-TMP4080NF
| Part # | Tritech-MOS-TMP4080NF |
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TMP4080NF
-Channel
P
Enhancement Mosfet
General Description
General Features
• Low R
DS(ON)
• RoHS and Halogen-Free Compliant
=-80
V
DS
=-40V
I
D
A
m
W
(
typ
.) @ V
GS
=-
10V
D
S
(
O
N
)
R
=
4.3
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
NF:DFN5x6-8L
Marking:80P04
(T
A
=25°C Unless Otherwise Noted)
Absolute Maximum Ratings
Symbol
Parameter
Rating
-40
Unit s
V
V
DS
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
-80
V
Continuous Drain Current, V
GS
@ -10V
1,6
Continuous Drain Current, V
GS
@ -10V
1,6
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
A
-56
A
I
DM
EAS
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
-320
576
-56
A
mJ
A
I
AS
Total Power Dissipation
4
W
℃
℃
P
D
@T
C
=25
℃
58
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
20
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
(t
≦
10S)
Thermal Resistance Junction-ambient
1
(Steady State)
Thermal Resistance Junction-case
1
—
50
R
θJC
—
1.6
1/6
TMP4080NF
-Channel
P
Enhancement Mosfet
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
On/Off States
BV
DSS
Parameter
Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=0V I
D
=-
250μA
V
DS
=-40V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS
, I
D
=-
250μA
V
DS
=-5V, I
D
=-20A
V
GS
=-10V, I
D
=-20A
V
GS
=-4.5V, I
D
=-20A
-40
V
μA
nA
V
I
DSS
-1
I
GSS
±100
-2.5
V
GS(th)
-1
-1.7
63
g
FS
Forward Transconductance
S
4.3
5.9
5.3
7.6
mΩ
mΩ
R
DS(ON)
Drain-Source On-State Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
Rg
Input Capacitance
6638
545
345
2.2
pF
pF
pF
Ω
V
DS
=-20V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1.0MHz
Switching Parameters
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
16
17
nS
nS
nS
nS
nC
nC
nC
V
GS
=-10V, V
DS
=-20V,
R
L
=1
Ω
, R
GEN
=3
Ω
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
68
31
Q
g
118
13
Q
gs
Q
gd
V
GS
=-10V, V
DS
=-20V, I
D
=-20A
22
Source-Drain Diode Characteristics
I
SD
V
SD
t
rr
Source-Drain Current (Body Diode)
-80
A
V
Forward on Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V, I
S
=-20A
-1.2
I
F
=-20A, di/dt=500A/
μ
s
I
F
=-20A, di/dt=5
00A/μs
24
ns
nC
Q
rr
140
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature.
Notes 2.E
AS
condition: T
J
=25
℃
,V
DD
=15V,V
G
=-10V, Rg=25
Ω
, L=0.5mH.
Notes 3.Repetitive Rating: Pulse width limited by maximum junction temperature.
2/6
TMP4080NF
-Channel
P
Enhancement Mosfet
Typical Electrical And Thermal Characteristics (Curves)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Power Dissipation
Figure 4. Drain Current
Figure 5. BV
DSS
vs Junction Temperature
Figure 6. R
DS(ON)
vs Junction Temperature
3
3/6
TMP4080NF
-Channel
P
Enhancement Mosfet
Figure 7. Gate Charge Waveforms
Figure 8. Capacitance
Figure 9. Body-Diode Characteristics
Figure 10. Maximum Safe Operating Area
4/6
TMP4080NF
-Channel
P
Enhancement Mosfet
1) E
AS
Test Circuits
2) Gate
Charge Test Circuit
3) Switch
Time Test Circuit
5/6
Package Mechanical Data DFN5x6-8L
:
Common
Symbol
mm
Inch
Mim
1.03
0.34
0.824
4.80
4.11
4.80
5.95
5.65
1.60
Max
1.17
0.48
0.0970
5.40
4.31
5.00
6.15
5.85
/
Min
Max
0.0461
0.0189
0.082
0.2126
0.1697
0.1969
0.2421
0.2303
/
A
b
c
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
/
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
/
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
6/6
