Tritech-MOS-TMP6010D
| Part # | Tritech-MOS-TMP6010D |
Download  | Tritech-MOS-TMP6010D |
TMP6010D
-Channel Enhancement
Mosfet
P
General Description
General Features
• Low R
DS(ON)
=-10
A
V
DS
=- 60V
I
D
• RoHS and Halogen-Free Compliant
R
DS(ON)
= 100m
W
(
typ
.) @ V
GS
=-10V
Applications
100% UIS Tested
100% R
g
Tested
• Load switch
• PWM
D:TO-252-3L
D
D
D
S
G
Marking: 10P06
Absolute Maximum Ratings
(T
A
= 25
°
C Unless Otherwise Noted)
Symbol
Parameter
Rating
Units
V
DS
V
GS
Drain-Source Voltage
-60
±
20
-10
V
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
A
-7.8
A
-3.5
A
-2.8
A
-25
A
EAS
Single Pulse Avalanche Energy
3
20
mJ
A
I
AS
Avalanche Current
-20
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
Total Power Dissipation
4
25
W
W
℃
℃
2
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
5
1/5
TM
1
P
0
6
P
0
0
1
6
0
D
-Channel Enhancement
Mosfet
P
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-8A
-0.049
—
V/
℃
—
100
115
—
120
150
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-4.5V , I
D
=-6A
—
V
GS(th)
Gate Threshold Voltage
-1.0
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
5.42
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=150
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-5A
—
5.8
5.85
2.9
1.8
10
Q
g
—
—
V
DS
=-20V , V
GS
=-4.5V , I
D
=-5A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-12V , V
GS
=-10V , R
G
=3.3
,
—
17
—
ns
I
D
=-5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
22
—
—
21
—
C
iss
C
oss
C
rss
Input Capacitance
—
715
51
—
V
DS
=-15V , V
GS
=0V , F=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
34
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
–
1
0
-24
-1.2
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
A
—
—
V
—
10.2
5.4
nS
nC
I
F
=-8A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1. The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3. The EAS data shows Max. rating. The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-15A
4. The power dissipation is limited by 150
℃
junction temperature
5. The data is theoretically the same as I
D
and I
DM
, in real applications, should be limited by total power dissipation.
2/5
-Channel Enhancement
Mosfet
P
TMP6010D
P-Channel Typical Characteristics
215
180
145
110
75
18
I
D
=-8A
V
GS
=-10V
V
GS
=-7V
15
12
9
V
GS
=-5V
6
V
GS
=-4.5V
V
GS
=-3V
3
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
10
7.5
5
10
8
V
DS
=-12V
I
D
=-5A
T
J
=150
℃
T
J
=25
℃
6
4
2.5
0
2
0
0.2
0.4
0.6
0.8
1
0
3.5
7
10.5
14
QG , Total Gate Charge (nC)
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
-50
0
50
100
150
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
3/5
-Channel Enhancement
Mosfet
P
TMP6010D
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.05
0.02
0.1
0.01
P
DM
SINGLE PULSE
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
