Tritech-MOS-TMP6030D
| Part # | Tritech-MOS-TMP6030D |
Download  | Tritech-MOS-TMP6030D |
-Channel
P
TMP6030D
Enhancement Mosfet
General Description
General Features
V
DS
=-60V I
=-30
• Low R
DS(ON)
A
D
• RoHS and Halogen-Free Compliant
=-10V
=
24
m
W
(
typ
.)@
V
GS
R
DS(ON)
Applications
• Load switch
• PWM
100% UIS Tested
100% R
g
Tested
D:TO-252-3L
D
D
D
S
G
Marking: 30P06
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Drain-Source Voltage (V
GS
=0V)
Limit
-60
Unit
V
V
GS
Gate-Source Voltage (V
DS
=0V)
±20
V
Drain Current-Continuous(T
C
=25
℃
)
Drain Current-Continuous(T
C
=100
℃
)
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Maximum Power Dissipation(T
C
=25
℃
)
Maximum Power Dissipation(T
C
=100
℃
)
Avalanche energy
(Note 2)
-30
A
I
D
I
DM (pluse)
P
D
-25.5
-144
79
A
A
W
W
mJ
℃
39.5
E
AS
196
T
J
, T
STG
Operating Junction and Storage Temperature Range
-55
T
o
1
75
Thermal Characteristic
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Typ
Max
1.9
Unit
R
JC
℃
/W
1/5
-Channel
P
TMP6030D
Enhancement Mosfet
Electrical Characteristics (T
J
=25
℃
unless otherwise noted)
Symbol
On/Off States
BV
DSS
Parameter
Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=0V I
D
=-
250μA
V
DS
=-60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=V
GS
, I
D
=-
250μA
V
DS
=-5V, I
D
=-15A
V
GS
=-10V, I
D
=-15A
V
GS
=-4.5V, I
D
=-10A
-60
V
μA
nA
V
I
DSS
-1
I
GSS
±100
-2.5
V
GS(th)
-1
-1.6
35
g
FS
Forward Transconductance
S
24
30
29
39
mΩ
mΩ
R
DS(ON)
Drain-Source On-State Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
4026
134
98
pF
pF
pF
V
DS
=-25V, V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
12.2
10
nS
nS
nS
nS
nC
nC
nC
V
GS
=-10V, V
DS
=-30V,
R
L
=1.5
Ω
, R
GEN
=3
Ω
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
64
14
Q
g
68
Q
gs
Q
gd
V
GS
=-10V, V
DS
=-30V, I
D
=-20A
10.5
13
Source-Drain Diode Characteristics
I
SD
V
SD
t
rr
Source-Drain Current (Body Diode)
-30
A
V
Forward on Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V, I
S
=-15A
-1.2
I
F
=-20A, di/dt=100A/
μ
s
I
F
=-20A, di/dt=1
00A/μs
26
29
ns
nC
Q
rr
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature.
Notes 2.E
AS
condition: T
J
=25
℃
,V
DD
=40V,V
G
=-10V, Rg=25
Ω
, L=0.5mH.
Notes 3.Repetitive Rating: Pulse width limited by maximum junction temperature.
2/5
-Channel
P
TMP6030D
Enhancement Mosfet
Typical Electrical And Thermal Characteristics (Curves)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Power Dissipation
Figure 4. Drain Current
Figure 5. BV
DSS
vs Junction Temperature
Figure 6. R
DS(ON)
vs Junction Temperature
3/5
-Channel
P
TMP6030D
Enhancement Mosfet
Figure 7. Gate Charge Waveforms
Figure 8. Capacitance
Figure 9. Body-Diode Characteristics
Figure 10. Maximum Safe Operating Area
4/5
Package Information:TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Min.
Symbol
Min.
2.200
0.000
0.660
0.460
6.500
5.100
Max.
2.400
0.127
0.860
0.580
6.700
5.460
Max.
0.094
0.005
0.034
0.023
0.264
0.215
A
A1
b
0.087
0.000
0.026
0.018
0.256
0.201
c
D
D1
D2
E
4.830 TYP.
0.190 TYP.
6.000
2.186
9.800
6.200
2.386
0.236
0.086
0.386
0.244
0.094
0.409
e
L
10.400
L1
L2
L3
L4
Φ
θ
2.900 TYP.
1.600 TYP.
0.114 TYP.
0.063 TYP.
1.400
1.700
0.055
0.067
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.350 TYP.
0.211 TYP.
5/5
