Truesemi-TSA82N30M
| Part # | Truesemi-TSA82N30M |
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TS
A
82N
30
M
30
0V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using
Truesemi‘s
•
82
A,
30
0V,Max.R
DS(on)
=
46
mΩ @ V
GS
=10V
•
Low gate charge(typical
70nC)
•
High ruggedness
•
Fast switching
• 100% avalanche tested
•
Improved dv/dt capability
advanced planar stripe DMO
S
t
echnology.
This advanced technology has been especially tailored to
minimize on-state
resistance, provide superior switching
performance, and withstand
high energy pulse in
the
avalanche and commutation mode.
These devices are
well suited foHigh power inverter, cutting machine.
TO-3P
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Symbol
V
DSS
Parameter
Value
30
0
±
20
82
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
V
GS
T
C
= 25
℃
T
C
= 100
℃
(Note 1)
A
I
D
Drain Current
A
66
I
DM
Pulsed Drain Current
A
328
3062
E
AS
Single Pulsed Avalanche Energy
(Note 2)
mJ
dv/dt
Peak Diode Recover
y
d
v/dt
V/ns
4.5
(Note 3)
P
D
Power Dissipatio
n
(
T
C
= 25
℃
)
W
5
8
0
T
J
, T
STG
Operating and Storage Temperature Range
℃
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” fro
m
c
ase for 5 seconds
T
L
℃
300
Thermal Resistance
Characteristics
Symbol
Parameter
T
y
p.
Max.
0.29
40
Units
℃
/W
℃
/W
R
θJC
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
—
—
R
θJA
© 2019
Truesemi Semiconductor
Corporation
Ver.B1
Electrical Characteristics
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Test Conditions
Min
T
y
p
Max Units
On Characteristics
V
GS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA
㎂
3
5
V
Static Drain-Source
On-Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 40 A
—
41.5
46
m
Ω
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 uA
㎂
30
0
—
—
V
V
DS
= 250V, V
GS
= 0 V
—
—
—
1
uA
uA
I
DSS
Zero Gate Voltage Drain Current
VDS=200
V
,
V
GS=0V ,
TC=125℃
—
10
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
I
GSSF
I
GSSR
V
GS
= 20 V, V
DS
= 0 V
—
—
—
100
nA
㎁
nA
㎁
V
GS
=- 20 V, V
DS
= 0 V
—
-100
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
6904
783
67
—
—
—
pF
㎊
pF
㎊
pF
V
DS
=
25
V, V
GS
= 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
80
26
—
—
—
—
—
—
—
ns
V
DS
=
125
V, I
D
=
82
A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drai
n
C
harge
ns
㎱
ns
㎱
ns
㎱
nC
R
G
=
25
Ω
V
GS=1
5
V
(Note 4,5)
(Note 4,5)
297
79
Q
g
Q
gs
Q
gd
1
23
45
V
DS
=
250
V, I
D
=
82
A,
V
GS
= 10 V
nC
48
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
Continuous Source-Drai
n
D
iode Forward Current
Pulsed Source-Drai
n
D
iode Forward Current
—
—
—
—
82
A
V
I
SM
328
VGS=0V , IS=
82
A ,
TJ=25℃
1.
5
V
SD
Source-Drai
n
D
iode Forward Voltage
—
—
NOTES:
1.
Repeated rating: Pulse width limited by safe operating area
2.
L=5mH, I
AS
=35A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3.
Pulse test: Pulse width≤300us, Duty cycle≤2%
4.
Essentially independent of operating temperature typical characteristics
© 2019
Truesemi Semiconductor
Corporation
Ver.B1
Typical Electrical Characteristics Curves
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
Fig. 4 Body Diode Forward Voltage Variation
with Source Current
Fig.3 On-Resistance Variation with Drain Current
and Gate Voltage
Fig. 5 Typical Capacitance Characteristics
Fig. 6 Typical
T
o
tal Gate Charge Characteristics
© 2019
Truesemi Semiconductor
Corporation
Ver.B1
Fig. 7 Breakdown Voltage Variation vs.
T
e
mperature
Fig. 8 On-Resistance Variation vs.
T
e
mperature
Fig. 10 Maximum Safe Operating Area
Fig. 9 Maximum Drain Current vs. Case
T
e
mperature
Fig. 11
T
ransient Thermal Impedance
© 2019
Truesemi Semiconductor
Corporation
Ver.B1
