Truesemi-TSD840MD

TS

D

840M

D

 

500V N-Channel MOSFET  

General Description  

Features  

This Power MOSFET is produced using

 

Truesemi‘s  

•

8

.0A,500V,Max.R  

=10V  

advanced planar stripe DMOS technology.  

This advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand

 

high energy pulse in

 

the  

avalanche and commutation mode. These devices are well  

suited for high efficiency switched mode power supplies,  

active power factor correction based on

 

half bridge  

topology.  

• 100% avalanche tested  

• High ruggedness  

• Fast switching  

• Improved

dv/dt capability  

D

G

S

TO-252  

Absolute Maximum Ratings  

T

J

=25

℃

unless otherwise specified  

Symbol  

V

DSS  

Parameter  

Value  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

500  

V

V

V

GS  

30  

±

T

C

= 25

℃

 

T

C

= 100

℃  

(Note 1)  

(Note 2)  

(Note 1)  

(Note 3)  

8

.0*  

5.

0

*  

A

I

D  

Drain Current  

A

I

DM  

E

AS  

Pulsed Drain Current  

3

2  

A

280  

Single Pulsed Avalanche Energy  

Repetitive Avalanche Energy  

Peak Diode Recovery dv/dt  

mJ  

mJ  

V/ns  

W

E

AR  

6.3  

dv/dt  

4.5  

1

0

0  

Power Dissipation (T

C

= 25

℃

)  

-Derate above 25

℃  

P

D  

T

J

, T

STG  

T

L  

0.36  

W/

℃  

℃

Operating and Storage Temperature Range  

-55 to +150  

Maximum lead temperature for soldering purposes,  

300  

℃

1/8” from case for 5 seconds  

* Drain current limited by maximum junction temperature.  

Thermal Resistance

 

Characteristics  

Symbol  

Parameter  

Value  

0.9  

Units  

℃

/W  

℃

/W  

℃

/W  

R

θ

JC  

Thermal Resistance,Junction-to-Case  

Thermal Resistance,Case-to-Sink Typ.  

—  

R

θ

CS  

R

θ

JA  

Thermal Resistance,Junction-to-Ambient  

62.5  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.B1  

Electrical Characteristics

T

J

=25

℃

unless otherwise specified  

Symbol  

Parameter  

Test Conditions  

Min  

Typ  

Max Units  

On Characteristics  

V

GS

(th)

Gate Threshold Voltage  

V

DS

= V

GS

, I

D

= 250 uA

㎂

 

2

.0  

—  

4

.0  

V

Static Drain-Source  

R

DS(ON)  

V

GS

= 10 V, I

D

= 4.5 A  

—  

0.95  

Ω

0.88  

On-Resistance  

Off Characteristics  

BV

DSS

Drain-Source Breakdown Voltage

 

V

GS

= 0 V, I

D

= 250 uA

㎂  

500  

—  

—  

—  

—  

V

Breakdown Voltage Temperature  

Coefficient  

△

BVDSS  

/

△

TJ  

ID = 250 uA, Referenced to  

25

℃

 

—  

V/

℃  

V

DS

= 500 V, V

GS

= 0 V  

V

DS

= 400 V, T

J

= 125

℃  

V

GS

= 30 V, V

DS

= 0 V  

V

GS

=- 30 V, V

DS

= 0 V  

—  

—  

—  

—  

—  

—  

—  

—  

1

uA  

I

DSS  

Zero Gate Voltage Drain Current  

10  

uA  

Gate-Body Leakage Current,Forward  

Gate-Body Leakage Current,Reverse  

I

GSSF  

I

GSSR  

100  

-100  

nA

㎁  

nA

㎁  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Input Capacitance  

—  

—  

—  

1

4

00  

210  

80  

—  

—  

—  

pF

㎊  

pF

㎊  

pF  

V

DS

= 25 V, V

GS

= 0 V,  

f = 1.0 MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Switching Characteristics  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-On Time  

—  

—  

—  

—  

—  

—  

—  

1

5  

6

2  

93  

48  

26  

4

—  

—  

—  

—  

—  

—  

—  

ns  

V

DS

= 250 V, I

D

=  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

ns

㎱  

ns

㎱  

ns

㎱  

nC  

8

.0A, R

G

= 25 Ω  

(Note 4,5)  

Q

g  

Q

gs  

Q

gd  

V

DS

= 400 V,

 

I

D

=

8

.0A,  

V

GS

= 10 V  

nC  

(Note 4,5)  

13  

nC  

Source-Drain Diode Maximum Ratings and Characteristics  

I

S  

I

SM  

V

SD  

t

rr  

Continuous Source-Drain Diode Forward Current  

Pulsed Source-Drain Diode Forward Current  

—  

—  

—  

—  

—  

—  

—  

8

.0  

24

.0  

1.4  

—  

A

Source-Drain Diode Forward Voltage

 

I

S

=

3

.0 A, V

GS

= 0 V  

—  

V

Reverse Recovery Time  

Reverse Recovery Charge  

34

0  

3

ns

㎱  

uC  

I

S

=

8

.0A, V

GS

= 0 V  

di

F

/dt = 100 A/

μs  

(Note 4)  

—  

Q

rr  

NOTES:  

1.

Repetitive Rating: Pulse width limited by maximum junction temperature  

2.

L=

5

mH, I

AS

=

10.6

A, V

DD

=50V,

V

G

=

10V

,

Starting TJ=25

℃

 

3.

I

SD

≤

8

.0A, di/dt ≤ 200A/us, V

DD

≤ BV

DSS

, Starting TJ = 25

℃  

4.

Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%  

5.

Essentially Independent of Operating Temperature Typical  

Characteristics  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.B1  

Electrical Characteristics Curves  

Fig. 1 Typical Output Characteristics  

Fig. 2 Typical Output Characteristics  

Fig.3 On-Resistance Variation with Drain  

Fig. 4 Body Diode Forward Voltage  

Variation with Source Current and  

T

e

mperature  

and Gate  

Current  

Voltage  

Fig. 5 Typical Capacitance Characteristics  

Fig. 6 Typical

T

o

tal Gate Charge Characteristics  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.B1  

Fig. 8 On-Resistance Variation vs.  

T

e

mperature  

Fig. 7 Breakdown Voltage Variation vs.  

T

e

mperature  

Fig. 9 Maximum Drain Current vs. Case  

T

e

mperature  

Fig. 10 Maximum Safe Operating Area  

Fig. 11

T

r

ansient Thermal Impedance  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.B1  

Fig. 12 Gate Charge Test Circuit & Waveform  

Fig. 13 Resistive Switching Test Circuit & Waveform  

Fig. 14 E

AS

T

e

st Circuit & Waveform  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.B1  

Fig. 15 Diode Reverse

 

Recovery Time

T

e

st Circuit & Waveform  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.B1