Truesemi-TSF4N90M

TSF4N90M  

900V

N-Channel MOSFET  

General Description  

Features  

This Power MOSFET is produced using

 

Truesemi‘s  

advanced planar stripe DMOS technology.  

•

Drain-Source breakdown voltage:  

BVDSS=900V (Min.)  

•

Low gate charge: Qg=22nC (Typ.)  

•

Low drain-source On resistance:  

RDS(on)=4.2Ω (Max.)  

This advanced technology has been especially tailored to  

minimize on-state resistance, provide superior switching  

performance, and withstand

 

high energy pulse in

 

the  

avalanche and commutation mode. These devices are well  

suited for high efficiency switched mode power supplies,  

active power factor correction based on

 

half bridge  

topology.  

•

100% avalanche tested  

•

RoHS compliant device  

Absolute maximum ratings

(T

C

=25

°

C unless otherwise

noted

）

 

Characteristic  

Drain-source voltage  

Symbol  

V

DSS  

Rating  

Unit  

V

900  



30  

4

Gate-source voltage  

Drain current (DC)

*  

V

GSS  

V

A

T

c

=25



C  

T

c

=100



C  

I

DM  

I

D  

2.53  

16  

A

Drain current (Pulsed)

*  

A

Single avalanche current

(Note 2)  

Single pulsed avalanche energy

(Note 2)  

Repetitive avalanche current

(Note 1)  

Repetitive avalanche energy

(Note 1)  

Power dissipation  

I

AS  

E

AS  

I

AR  

4

A

84.7  

4

mJ  

A

E

AR  

P

D  

4

mJ  

W



C  



C  

40  

Junction temperature  

T

J  

150  

-55~150  

Storage temperature range  

T

stg  

* Limited only maximum junction temperature  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.C1  

Thermal Characteristics  

Characteristic  

Symbol  

Rating  

Unit  

Thermal resistance, junction to case  

Thermal resistance, junction to ambient  

R

th(j-c)  

R

th(j-a)  

Max. 3.13  

Max. 62.5  



C/W  

Electrical Characteristics

(T

C

=25



C unless otherwise noted)  

Characteristic  

Drain-source breakdown voltage  

Gate threshold voltage  

Drain-source cut-off current  

Gate leakage current  

Symbol  

BV

DSS  

V

GS(th)  

I

DSS  

T

e

st Condition  

Min. Typ.

 

Max.  

Unit  

V

I

D

=250uA, V

GS

=0V  

900  

–

4

–

I

D

=250uA, V

DS

=V

GS  

V

DS

=900

V

,

V

GS

=0V  

V

DS

=0

V

,

V

GS

=



30V  

3

–

–

–

–

–

–

–

–

–

–

–

–

–

–

5

V

–

1

uA  

nA  

I

GSS  

–



100  

Drain-source on-resistance  

Forward transfer conductance

(Note 3)  

Input capacitance  

R

DS(ON)

V

GS

=10

V

,

I

D

=2A  

3.7  

4

4.2  

–



g

fs  

C

V

DS

=10

V

,

I

D

=2A  

S

750  

62  

12  

38  

60  

68  

54  

22  

8

–

iss  

V

DS

=25

V

,

V

GS

=0

V

,  

f=1.0MHz  

Output capacitance  

C

oss  

C

rss  

t

d(on)  

t

r  

–

pF  

ns  

Reverse transfer capacitance  

T

u

rn-on delay time

(Note 3,4)  

Rise time

(Note 3,4)  

–

–

–

V

DD

=450

V

,

I

D

=4A,  

R

G

=25Ω  

T

u

rn-off delay time

(Note 3,4)  

Fall time

(Note 3,4)  

t

d(off)  

t

f  

–

–

T

o

tal gate charge

(Note 3,4)  

Gate-source charge

(Note 3,4)  

Gate-drain charge

(Note 3,4)  

Q

g  

–

V

DS

=720

V

,

V

GS

=10

V

,  

I

D

=4A  

Q

gs  

Q

gd  

–

nC  

7

–

Source-Drain Diode Ratings and Characteristics

(T

C

=25



C unless otherwise noted)  

Characteristic  

Source current (DC)  

Symbol  

I

S  

T

e

st Condition  

Min.  

Typ. Max.  

Unit  

–

–

–

–

–

–

–

4

16  

1.4  

–

A

A

Integral reverse diode  

in the MOSFET  

Source current (Pulsed)  

Forward voltage  

I

SM  

V

SD  

t

rr  

V

GS

=0

V

,

I

S

=4A  

–

V

Reverse recovery time

(Note 3,4)  

Reverse recovery charge

(Note 3,4)  

301  

2.06  

ns  

uC  

I

S

=4A, V

GS

=0V  

dI

F

/dt=100A/us  

Q

rr  

–

Note:  

1. Repeated rating: Pulse width limited by safe operating area  

2. L=10mH, I

AS

=4A, V

DD

=50

V

,

R

G

=25

Ω

, Starting T

J

=25

°

C  

3. Pulse test: Pulse width≤300us, Duty cycle≤2%  

4. Essentially independent of operating temperature typical characteristics  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.C1  

Electrical Characteristics Curves  

Fig. 1 Typical Output Characteristics  

Fig. 2 Typical

T

r

ansfer Characteristics  

Fig.3 On-Resistance Variation with Drain Current  

and Gate Voltage  

Fig. 4 Body Diode Forward Voltage Variation  

with Source Current  

Fig. 6 Typical

T

o

tal Gate Charge Characteristics  

Fig. 5 Typical Capacitance Characteristics  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.C1  

Electrical Characteristics Curves  

Fig. 7 Breakdown Voltage Variation vs.

T

e

mperature  

Fig. 8 On-Resistance Variation vs.

T

e

mperature  

Fig. 10 Maximum Safe Operating Area  

Fig. 9 Maximum Drain Current vs. Case

T

e

mperature  

Fig. 11 Transient Thermal Impedance  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.C1  

Fig. 12 Gate Charge

T

e

st Circuit & Waveform  

Fig. 13 Resistive Switching

T

e

st Circuit & Waveform  

Fig. 14 E

AS

T

e

st Circuit & Waveform  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.C1  

Fig. 15 Diode Reverse

 

Recovery Time

T

e

st Circuit & Waveform  

© 201

8

Truesemi Semiconductor

 

Corporation  

Ver.C1