Truesemi-TSF9N90M
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TSF9N90M
900V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using
Truesemi‘s
• 9A,900V,Max.R
DS(on)
=1.4
Ω
@ V
GS
=10V
• Low gate charge(typical
52nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand
high energy pulse in
the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on
half bridge
topology.
Absolute Maximum Ratings
T
C
=25
℃
unless otherwise specified
Value
Symbol
V
DSS
Parameter
Units
V
Drain-Source Voltage
Gate-Source Voltage
900
V
GS
30
V
±
T
C
= 25
℃
9*
A
I
D
Drain Current
T
C
= 100
℃
5.7*
A
I
DM
E
AS
Pulsed Drain Current
36*
A
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Repetitive avalanche current
Power Dissipation (T
C
= 25
℃
)
(Note 2)
(Note 1)
(Note 1)
900
mJ
mJ
A
E
AR
4.8
I
AR
9
48
P
D
W
℃
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
* Drain current limited by maximum junction temperature.
Thermal Resistance
Characteristics
Value
2.6
Symbol
Parameter
Units
℃
/W
℃
/W
R
θ
JC
Thermal Resistance,Junction-to-Case
Thermal Resistance,Junction-to-Ambient
62.5
R
θ
JA
© 2015
Truesemi Semiconductor
Corporation
Ver.B1
Electrical Characteristics
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
V
GS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA
㎂
3.0
—
—
5.0
1.4
V
Static Drain-Source
On-Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 4.5A
1.2
Ω
Forward transfer conductance(note 3)
g
fs
V
DS
= 10 V, I
D
= 4.5A
—
9.2
—
S
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 uA
㎂
900
—
—
—
—
—
—
—
1
V
V
DS
= 900 V, V
GS
= 0 V
uA
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 720 V, T
C
= 125
℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
=- 30 V, V
DS
= 0 V
—
100
100
-100
uA
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
I
GSSF
I
GSSR
—
nA
㎁
nA
㎁
—
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
2100
175
14
—
—
—
pF
㎊
pF
㎊
pF
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Time
—
—
—
—
—
—
—
50
120
100
75
—
—
ns
V
DS
= 450 V, I
D
= 9A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
㎱
ns
㎱
ns
㎱
nC
R
G
= 25 Ω
(Note 3,4)
—
—
Q
g
Q
gs
Q
gd
52
68
—
V
DS
= 720 V,
I
D
= 9A,
V
GS
= 10 V
16
nC
(Note 3,4)
20
—
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
—
—
—
—
—
—
—
9
36
1.4
—
A
Source-Drain Diode Forward Voltage
I
S
= 9A, V
GS
= 0 V
—
V
Reverse Recovery Time
Reverse Recovery Charge
550
6.5
ns
㎱
uC
I
S
=9A, V
GS
= 0 V
di
F
/dt = 100 A/
μs
(Note 4)
—
Q
rr
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=21mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25
℃
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
© 2015
Truesemi Semiconductor
Corporation
Ver.B1
Fig 12.
Gate Charge Test Circuit
& Waveform
V
GS
Same Type
50KΩ
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13.
Resistive Switching Test Circuit
& Waveforms
R
L
V
DS
90%
V
DS
V
DD
( 0.5 rated V
DS
)
R
G
10%
V
in
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14.
Unclamped Inductive Switching Test Circuit
& Waveforms
L
1
2
2
—-
E
AS
=
L
L
I
AS
V
DS
V
DD
BV
DSS
I
AS
I
D
R
G
I
D
(t)
DUT
V
DD
V
DS
(t)
10V
t
p
Time
© 2015
Truesemi Semiconductor
Corporation
Ver.B1
Fig 15.
Peak Diode Recovery dv/dt Test Circuit
& Waveforms
DUT
+
V
DS
_
I
S
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
•
dv/dt controlled by
R
G
•
I
S
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
S
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
© 2015
Truesemi Semiconductor
Corporation
Ver.B1
