TWGMC-2N7002
| Part # | TWGMC-2N7002 |
Download  | TWGMC-2N7002 |
M
M
2
A
B
S
N
O
T
I
7
2
5
3
0
3
5
4
0
0
5
0
2
5
1
0
2N7002
N-Channel Enhancement Mode Field Effect Transistor
Description
These N-channel enhancement mode field effect transis-tors
SOT-23
are produced using ON Semiconductor’s proprietary, high cell
density, DMOS technology.These products have been designed to
minimize on-state resistance while providing rugged, reliable, and
fast switching performance.They can be used in most applications
requiring up to 400 mA DC and can deliver pulsed currents up to 2
A. These products are particularly suited for low-voltage, low-cur-
rent applications, such as small servo motor control, power
MOSFET gate drivers, and other switching appli-cations.
D
1. GATE
2. SOURCE
3. DRAIN
G
MARKING: 7002
S
Features
• High
Density Cell Design for Low R
DS(ON)
• Voltage
Controlled Small Signal Switch
• Rugged
and Reliable
• High
Saturation Current Capability
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
DSS
Drain-to-Source Voltage
Voltage (R
GS
≤
1 M
Ω )
60
60
V
V
V
V
DGR
V
GSS
Drain-Gate
Gate-Source Voltage – Continuous
±20
±40
115
800
200
1.6
Gate-Source Voltage – Non Repetitive (tp < 50
S)
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
I
D
mA
P
D
Maximum Power Dissipation Derated above 25°C
mW
mW/°C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to 150
300
°C
°C
Maximum Lead Temperature for Soldering Purposes, 1/16-
inch from Case for 10 Seconds
Thermal Characteristics
Values are at T
C
= 25°C unless otherwise noted
.
Value
Parameter
Unit
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
1
M
M
2
A
B
S
N
O
T
I
7
2
5
3
0
3
5
4
0
0
5
0
2
5
1
0
Electrical Characteristics
Values are at T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
60
Typ.
Max.
Unit
Off Characteristics
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
V
GS
= 0 V, I
D
= 10
A
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
C
=
125°C
0.5
mA
I
GSSF
I
GSSR
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
100
nA
nA
V
GS
= -20 V, V
DS
= 0 V
-100
Electrical Characteristics
(Continued)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
On Characteristics
V
GS(th)
Gate Threshold Voltage
1
2.1
2.5
V
V
DS
= V
GS
, I
D
= 250
A
R
DS(ON)
Static Drain-Source On-
Resistance
V
GS
= 10 V, I
D
= 500 mA
1.2
1.7
7.5
V
GS
= 10 V,
13.5
I
D
= 500 mA, T
C
= 100°C
V
DS(ON)
Drain-Source On-Voltage
V
GS
= 10 V,
I
D
= 500 mA
0.6
3.75
1.5
V
V
GS
= 5.0 V, I
D
= 50 mA
0.09
I
D(ON)
g
FS
On-State Drain Current
V
GS
= 10 V, V
DS
2 V
DS(on)
500
80
2700
mA
mS
Forward Transconductance
320
V
DS
2V
DS(ON)
, I
D
= 200 mA
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V, f =
1.0 MHz
20
11
4
50
25
5
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turn-On Time
Turn-Off Time
VDD = 30 V, RL = 150Ω ID =
200 mA, VGS= 10 V, RGEN
= 25Ω
20
20
ns
ns
t
off
VDD = 30 V, RL = 150 ID =
200 mA, VGS= 10 V, RGEN
= 25Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
115
0.8
1.2
mA
A
I
SM
V
SD
Drain-Source Diode
Forward Voltage
V
GS
= 0 V,
I
S
= 400 mA
(1)
0.88
V
Note:
1. Pulse test : Pulse Width ≤
300 μs, Duty Cycel ≤ 2 %.
2
1
M
M
2
A
B
S
N
O
T
I
7
2
5
3
0
3
5
4
0
0
5
0
2
5
1
0
Typical Characteristics
2
3
2
.
5
2
V
GS
= 10V
V
G
=
4
.
0
V
9.0
8.0
4
.
5
5
.
0
7.0
1
.
5
1
6
.
0
6.0
7
.
0
8
.
0
5.0
1
.
5
1
9
.
0
10
0
.
5
0
4.0
3.0
0
.
5
0
1
2
3
4
5
0
0
.
4
0
.
8
1
.
2
1
.
6
2
V
, DRAIN-SOURCE VOLTAGE (V
I
, DR
A
I
N CURRENT (A)
DS
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
3
V
G
V
= 10V
1.75
2.5
2
I
D
= 500mA
T
=
1
25°C
J
1.5
1.25
1
1.5
1
25°C
-55°C
0.75
0.5
0.5
0
–
5
0
–
2
5
0
T
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
, JUNCTION TEMPERATURE (°C)
J
I
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
2
1.6
1.2
0.8
0.4
0
1
.
1
T
= -55°C
J
V
=
1
0 V
25°C
V
DS
= V
GS
I
= 1
m
A
125°C
1
.
0
5
1
0
.
9
5
0
.
9
0
.
8
5
0
.
8
-50
-25
0
T
25
50
75
100
125
150
0
2
4
6
8
10
, JUNCTION T
E
M
P
ER
A
TURE (°C)
V
, GATE TO SOURCE VOLTAGE (V
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
3
1
M
M
2
A
B
S
N
O
T
I
7
2
5
3
0
3
5
4
0
0
5
0
2
5
1
0
Typical Characteristics
1.1
2
1
V
GS
=
0
V
I
D
= 250µA
1.075
0
.
5
1.05
1.025
1
T
=
1
25°C
J
0
.
1
25°C
0
.
0
5
–
5
5°C
0.975
0.95
0.925
0
.
0
1
0
.
0
05
0
.
0
01
-50
-25
0
T
25
50
75
100
125
150
0
.
2
0
.
4
V
0
.
6
0
.
8
1
1
.
2
1
.
4
, JUNCTION TE
M
P
ERATURE (°C)
J
, BODY DIODE FOR
W
ARD VOLTAGE
(
V)
Figure 8.
Body Diode Forward Voltage Variation with
Figure 7. Breakdown Voltage Variation
with Temperature
60
40
10
25V
=
V
DS
C
iss
8
6
4
2
0
20
10
5
C
oss
I
=
500m A
C
rss
f = 1
M
Hz
V
G
= 0V
280m A
0
.
8
2
1
0
.
8
1
.
2
Q
, GATE
C
H
ARGE (nC)
g
115m A
1
2
3
5
10
20
30
50
0
0
.
4
1
.
6
2
1
.
2
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
t
on
t
off
V
DD
t
d(off)
r
t
t
f
t
d(on)
90%
90%
R
L
V
IN
D
V
OUT
Output, V
Input, V
out
10%
90%
10%
V
GS
Inverted
R
GEN
DUT
G
50%
in
50%
10%
S
Pulse Width
Figure 11.
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Figure 12. Switching Waveforms
4
1
M
M
2
A
B
S
N
O
T
I
7
2
5
3
0
3
5
4
0
0
5
0
2
5
1
0
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
5
1
