TWGMC-BC807-16
| Part # | TWGMC-BC807-16 |
Download  | TWGMC-BC807-16 |
BC807
TRANSISTOR(PNP)
BC807
FEATURES
SOT-23
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
For Switching, AF Driver and Amplifier
Applications
MARKING:
BC
807-16:5A
Complementary NPN Types Available (BC817)
BC
807-25:5B
BC
807-40:5C
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
-50
Units
Collector-Base Voltage
V
V
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
-45
V
V
V
CEO
V
EBO
I
C
-5
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.5
0.3
A
W
℃
℃
P
C
150
-55-150
T
j
Storage Temperature
T
stg
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified
)
Symbol
Test conditions
MIN
MAX
UNIT
Parameter
V
CBO
-50
-45
-5
V
V
Collector-base breakdown voltage
μ
A
I
C
= -10
,
I
E
=0
V
CEO
V
EBO
I
CBO
I
C
= -10mA,
I
B
=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
μ
A
I
E
= -1
,
I
C
=0
V
CB
= -45
V
,
I
E
=0
V
EB
= -4
V
,
I
C
=0
-0.1
-0.1
μ
A
μ
A
I
EBO
Emitter cut-off current
DC current gain
100
250
400
600
807-16
807-25
807-40
160
250
h
FE(1)
V
CE
= -1
V
,
I
C
= -100mA
V
CE
(sat)
V
BE
(sat)
I
C
=-500mA, I
B
= -50mA
I
C
= -500mA,
I
B
= -50mA
-0.7
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
= -5
V
,
I
C
= -10mA
f=
100MHz
100
MHz
Transition frequency
f
T
1
BC807
TYPICAL CHARACTERISTICS
400
1000
See Note 1
T
A
= 25
°
C
f = 20MHz
300
200
100
0
-V
CE
= 5.0V
1.0V
100
10
1
10
100
1000
0
100
200
-I
C
, COLLECTOR CURRENT (mA)
T
SB
, SUBSTRATE TEMPERATURE (
°
C)
Fig. 1,
Power Derating Curve
Fig. 2,
Gain-Bandwidth Product vs Collector Current
-V
CE
= 1V
0.5
0.4
0.3
1000
100
10
typical
limits
at T
A
= 25
°
C
150
°
C
-I
C
/ -I
B
= 10
25
°
C
-50
°
C
0.2
0.1
25
°
C
150
°
C
-50
°
C
0
0.1
1
10
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3,
Collector Sat. Voltage vs Collector Current
1000
0.1
1
10
100
100
1000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4,
DC Current Gain vs Collector Current
500
400
300
100
80
3.2
2.8
0.35
0.3
2.4
2
1.8
1.6
1.4
0.25
60
40
0.2
1.2
0.8
0.15
200
100
0
0.6
0.4
0.1
20
0
-I
B
= 0.05mA
-I
B
= 0.2mA
20
0
10
0
1
2
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5,
Typical Emitter-Collector Characteristics
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 6,
Typical Emitter-Collector Characteristics
2
