TWGMC-BC848A
| Part # | TWGMC-BC848A |
Download  | TWGMC-BC848A |
BC846 THRU BC850
BC846 THRU BC850
TRANSISTOR(NPN)
FEATURE
Low current (max. 100 mA)
•
•
SOT-23
Low voltage (max. 65 V).
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
APPLICATIONS
General purpose switching and amplification.
•
DESCRIPTION
NPN transistor in a SOT23 plastic package.
•
•
PNP complements: BC856
/
857
/
858
/859/860
.
MAXIMUM RATINGS (
T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Value
Units
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
BC846
BC847, BC850
BC848, BC849
80
50
30
V
V
V
V
CBO
V
CBO
V
CBO
BC846
BC847, BC850
BC848, BC849
65
45
30
V
V
V
V
CEO
V
CEO
V
CEO
BC846, BC847
BC848, BC849, BC850
V
EBO
V
EBO
6
5
V
V
Collector Current
I
C
I
CM
P
tot
R
θ
JA
T
J
100
200
300
417
mA
mA
mW
Peak Collector Current
Power Dissipation
O
Thermal Resistance from Junction to Ambient Air
Junction Temperature
C/W
O
C
150
O
C
Storage Temperature Range
T
S
– 65 to + 150
1
BC846 THRU BC850
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified
)
Parameter
Symbol
Min.
Typ.
Max.
Units
Collector-base breakdown voltage
at I
C
= 10 µA, I
E
= 0
80
50
30
BC846
BC847/850
BC848/849
V
(BR)CBO
Collector-emitter breakdown voltage
at I
C
= 10 mA, I
B
= 0
BC846
BC847/850
BC848/849
65
45
30
V
(BR)CEO
V
(BR)EBO
Emitter-base breakdown voltage
at I
E
= 1 µA, I
C
= 0
BC846/847
BC848-850
6
5
DC Current Gain
at V
CE
= 5 V, I
C
= 2 mA
A
B
C
h
FE
h
FE
h
FE
110
200
420
–
–
–
220
450
800
–
–
–
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
V
CEsat
V
CEsat
–
–
–
–
250
600
mV
mV
at I
C
= 100 mA, I
B
= 5 mA
Base-emitter saturation voltage
at IC
= 10 mA, IB = 0.5 mA
at IC
= 100 mA, IB = 5 mA
V
BE
sat
V
BE
sat
–
–
700
900
850
1100
mV
mV
Base Emitter On Voltage
at I
C
= 2 mA, V
CE
= 5 V
at I
C
= 10 mA, V
CE
= 5 V
V
BE(on)
V
BE(on)
580
–
–
–
700
770
mV
mV
Collector Cutoff Current
at V
CB
= 30 V
I
CBO
f
T
–
–
–
–
–
300
–
15
–
nA
MHz
pF
Current Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
Output Capacitance
at V
CB
= 10 V, f = 1 MHz
Input Capacitance
C
ob
C
ib
6
–
9
pF
at V
EB
= 0.5 V, f = 1 MHz
Noise Figure
at I
C
= 200 µA,
V
CE
= 5 V
R
G
= 2 K
Ω
, f = 1 KHz
at I
C
= 200 µA,V
CE
= 5 V,
NF
NF
NF
NF
–
–
–
–
–
–
–
–
10
4
4
dB
dB
dB
dB
BC846, BC847, BC848
BC849, BC850
BC849
3
R
G
= 2 K
Ω
, f = 30 ~15 KHz
BC850
MARKING CODE
TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C
MARK 1A
1B 1C 1E 1F 1G 1J 1K 1L 2A
2B 2C 2E 2F 2G
2
BC846 THRU BC850
TYPICAL CHARACTERISTICS
Static Characteristic
DC Current Gain
100
80
10000
I
B
=400µA
I
B
=350µA
I
B
=300µA
1000
100
I
B
=250µA
60
40
V
CE
=5V
I
B
=200µA
I
B
=150µA
I
B
=100µA
20
0
I
B
=50µA
10
1
0
4
8
12 16
20
10
100
1000
Collecto
r
–
Emitter Voltage, V
CE
(V)
Collector Curren
t
, I
C
(mA)
Base-Emitter Saturation Voltage
Collecto
r
–
Emitter Saturation Voltage
Base-Emitter on Voltage
V
CE
=2V
10000
100
10
1
I
C
=10I
B
V
BE(SAT)
1000
100
V
CE(sat)
10
1
0.1
10
100
1000
0
.
1
0
.
2
0.4 0.6 0.8
1.0 1.2
Collector Curren
,
t I
C
(mA)
Base-Emitter Voltage, V
B
E
(V)
Collector Output Capacitance
f=1MHz
Current Gain Bandwidth Product
100
10
1
1000
V
∞
=5V
100
10
1
0.1
1
10
100
1000
0.1
1
10
100
Collecto
r
-Base Voltag
e
,
V
C
B
(
V)
Collector Curren
t
, I
C
(mA)
3
