TWGMC-DTC114EE

Part #TWGMC-DTC114EE
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TWGMC-DTC114EE
DTC114EE  
NPN Silicon Epitaxial Planar Digital Transistor  
Equivalent Circuit  
FEATURES  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors(see equivalent circuit)  
The bias resistors consist of thin-film resistors with complete isolation  
to allow negative biasing of the input.They also have the advantage of  
almost completely eliminating parasitic effects  
Only the on/off conditions need to be set for operation, making device  
designs easy  
MARKING: 24  
PIN CONNENCTIONS and MARKING  
DTC114EE  
SOT-523  
DTC114ECA  
SOT-23  
3
3
1. IN  
1. IN  
2. GND  
3. OUT  
2. GND  
3. OUT  
1
1
2
2
DTC114EUA  
SOT-323  
DTC114EKA  
SOT-23-3L  
3
3
1. IN  
1. IN  
2. GND  
3. OUT  
2. GND  
3. OUT  
1
1
2
2
1

DTC114EE  
MAXIMUM RATINGS(Ta=25
℃
unless otherwise noted)  
Limits(DTC114E
□
)  
UA CA  
Symbol  
Parameter  
Unit  
E
KA  
V

CC  

V

IN  

I

O  

Supply Voltage  
50  
V
Input Voltage  
-10
~
+40  
50  
V
Output Current  
mA  
mA  
mW  
I

CM  

P

D  

T

j  

Peak Collector Current  
Power Dissipation  
Junction Temperature  
Storage Temperature  
100  
150  
200  
200  
200  
150  
℃
℃
T

stg  

-55
~
+150  
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)  
Parameter  
Symbol  
V

I(off)  

V

I(on)  

V

O(on)  

I

I  

Conditions  
V

CC

=5V,I

O

=100µA  
Min  
Typ  
Max  
Unit  
V
0.5  
Input voltage  
V

O

=0.3V,I

O

=10mA  
I

O

/I

I

=10mA/0.5mA  
V

I

=5V  
3
V
Output voltage  
Input current  
0.3  
0.88  
0.5  
V
mA  
μ
A  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
I

O(off)  

G

I  

V

CC

=50V,V

I

=0  
V

O

=5V,I

O

=5mA  
30  
7
R

1  

10  
1
13  
k
Ω  
R

2

/R

1  

f

T  

0.8  
1.2  
V

O

=10V,I

O

=5mA,f=100MHz  
250  
MHz  
2

DTC114EE  
TYPICAL CHARACTERISTICS  
OFF Characteristics  
ON Characteristics  
10  
100  
V

CC

=5V  
V

O

=0.3V  
T

a

=100
℃
 
25
℃  
3
1
30  
10  
T

a

=25
℃  
0.3  
0.1  
3
100
℃  
1
0.03  
0.01  
0.3  
0.1  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
0.1  
0.3  
1
3
10  
30  
100  
INPUT VOLTAGE
 
V

I(OFF)

(V)  
OUTPUT CURRENT
 
I

O

(mA)  
V

O(ON)

—— I

O  

G

I

—— I

O  

1
1000  
I

O

/I

I

=20  
V

O

=5V  
T

a

=100
℃  
25
℃  
300  
100  
0.3  
0.1  
T

a

=100
℃  
25
℃  
30  
10  
0.03  
0.01  
3
1
3
0.3  
3
1
10  
30  
100  
0.1  
1
10  
30  
100  
OUTPUT CURRENT
 
I

O

(mA)  
OUTPUT CURRENT
 
I

O

(mA)  
P

D

—— T

a  

C

O

—— V

R  

10  
8
400  
350  
300  
250  
200  
150  
100  
50  
f=1MHz  
T

a

=25
℃  
DTC114ESA  
6
DTC114EUA/KA/CA  
DTC114EE  
4
DTC114EM  
2
0
0
0
4
8
12  
16  
20  
0
25  
50  
75  
100  
125  
150  
REVERSE BIAS VOLTAGE
 
V

R

(V)  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
3

DTC114EE  
PACKAGE OUTLINE  
SOT-523  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
p
w
M
B
1
L
p
e
detail X  
0
0.5  
1 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
A
UNIT  
b
c
D
E
e
e
1
H
L
Q
v
w
p
p
E
max  
0.30  
0.15  
0.25  
0.10  
1.8  
1.4  
0.9  
0.7  
1.75  
1.45  
0.45  
0.15  
0.23  
0.13  
0.95  
0.60  
mm  
1
0.5  
0.2  
0.2  
0.1  
4