TWGMC-DTC114EE
| Part # | TWGMC-DTC114EE |
| Download | TWGMC-DTC114EE |
DTC114EE
NPN Silicon Epitaxial Planar Digital Transistor
Equivalent Circuit
FEATURES
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors(see equivalent circuit)
The bias resistors consist of thin-film resistors with complete isolation
to allow negative biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making device
designs easy
MARKING: 24
PIN CONNENCTIONS and MARKING
DTC114EE
SOT-523
DTC114ECA
SOT-23
3
3
1. IN
1. IN
2. GND
3. OUT
2. GND
3. OUT
1
1
2
2
DTC114EUA
SOT-323
DTC114EKA
SOT-23-3L
3
3
1. IN
1. IN
2. GND
3. OUT
2. GND
3. OUT
1
1
2
2
1
DTC114EE
MAXIMUM RATINGS(Ta=25
℃
unless otherwise noted)
Limits(DTC114E
□
)
UA CA
Symbol
Parameter
Unit
E
KA
V
CC
V
IN
I
O
Supply Voltage
50
V
Input Voltage
-10
~
+40
50
V
Output Current
mA
mA
mW
I
CM
P
D
T
j
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
100
150
200
200
200
150
℃
℃
T
stg
-55
~
+150
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
Conditions
V
CC
=5V,I
O
=100µA
Min
Typ
Max
Unit
V
0.5
Input voltage
V
O
=0.3V,I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
3
V
Output voltage
Input current
0.3
0.88
0.5
V
mA
μ
A
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
G
I
V
CC
=50V,V
I
=0
V
O
=5V,I
O
=5mA
30
7
R
1
10
1
13
k
Ω
R
2
/R
1
f
T
0.8
1.2
V
O
=10V,I
O
=5mA,f=100MHz
250
MHz
2
DTC114EE
TYPICAL CHARACTERISTICS
OFF Characteristics
ON Characteristics
10
100
V
CC
=5V
V
O
=0.3V
T
a
=100
℃
25
℃
3
1
30
10
T
a
=25
℃
0.3
0.1
3
100
℃
1
0.03
0.01
0.3
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
INPUT VOLTAGE
V
I(OFF)
(V)
OUTPUT CURRENT
I
O
(mA)
V
O(ON)
—— I
O
G
I
—— I
O
1
1000
I
O
/I
I
=20
V
O
=5V
T
a
=100
℃
25
℃
300
100
0.3
0.1
T
a
=100
℃
25
℃
30
10
0.03
0.01
3
1
3
0.3
3
1
10
30
100
0.1
1
10
30
100
OUTPUT CURRENT
I
O
(mA)
OUTPUT CURRENT
I
O
(mA)
P
D
—— T
a
C
O
—— V
R
10
8
400
350
300
250
200
150
100
50
f=1MHz
T
a
=25
℃
DTC114ESA
6
DTC114EUA/KA/CA
DTC114EE
4
DTC114EM
2
0
0
0
4
8
12
16
20
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
3
DTC114EE
PACKAGE OUTLINE
SOT-523
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
p
w
M
B
1
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
1
H
L
Q
v
w
p
p
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
1
0.5
0.2
0.2
0.1
4
