TWGMC-MCR100-6
| Part # | TWGMC-MCR100-6 |
Download  | TWGMC-MCR100-6 |
MCR100
S
O
T
–
2
3 Plastic-Encapsulate
Thyristors
,
MCR100- 6
– 8
Silicon
Controlled Rectifier
S
O
T-23
FEATURES
Current-I
GT
: 200
µ
A
TRMS
: 0.8
A
1.KATHODE
I
2.
3.
GATE
V
RRM
/
V
DRM
: MCR100-6
:
400 V
ANODE
MCR100-8
:
600 V
Operating and storage junction temperature range
T
J
，
T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS
（
Ta=25
℃
unless otherwise specified
）
Parameter
On state voltage
Symbol
Test conditions
I
TM
=1A
V
AK
=7V
M
in
M
ax
1.7
U
nit
V
*
V
TM
Gate trigger voltage
V
GT
0.8
V
Peak Repetitive forward and reverse
blocking voltage
V
DRM
I
DRM
= 1
0 µ
A
V
AND
MCR100-6
400
600
V
RRM
MCR100-8
Peak forward or reverse blocking
Current
I
DRM
I
RRM
V
AK
= Rated
10
5
µA
V
DRM
or V
RRM
Holding current
I
H
I
HL
= 20mA ,
V
AK
= 7V
mA
µA
µA
A2
A1
5
15
30
15
Gate trigger current
I
GT
V
AK
=7V
A
B
30
80
80
µA
µA
200
* Forward current applied for 1 ms maximum duration
，
duty cycle
≤
1%
。
1
MCR100
Typical Characteristics
I
GT
——
T
a
I
H
——
T
a
50
40
30
20
10
0
400
300
200
100
0
Pulsed
V
AK
=7V
Pulsed
I
T
=20mA
、
I
G
=50mA
25
50
75
100
125
25
50
75
100
125
AMBIENT TEMPERATURE
T
a
(
℃
)
AMBIENT TEMPERATURE
T
a
(
℃
)
I ——
V
TM
V
GT
—— T
a
T
0.7
0.6
0.5
0.4
0.3
0.2
7
6
5
4
3
2
1
0
Pulsed
I
G
=50mA
Pulsed
V
AK
=7V
T
a
=100
o
C
T
a
=25
℃
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
AMBIENT TEMPERATURE
T
a
(
℃
)
ON-STATE VOLTAGE
V
TM
(V)
2
