TWGMC-MMBT2222A

MMB

T

A

S

2

O

I

2

2

3

2

3

4

2

0

0

A

5

0  

MMBT2222A  

TRANSISTOR (NPN)  

FEATURES  

SOT-23  

Epitaxial planar die construction  

Complementary PNP Type available(MMBT2907A)  

1

．

BASE  

2

．

EMITTER  

3

．

COLLECTOR  

MARKING: 1P  

MAXIMUM RATINGS (T  

a

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

75  

Units  

V

Collector-Base Voltage  

V

CBO  

V

CEO  

V

EBO  

40  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

6

V

Collector Current -Continuous  

Collector Dissipation  

600  

mA  

mW  

℃

/W  

℃

I

C

30

0  

P

C

Thermal Resistance, Junction to Ambient  

Junction

T

e

mperature  

417  

R

θ

JA  

150  

T

J

Storage

T

e

mperature  

-55to+150  

T

℃

stg  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

75  

40  

6

Typ  

Max  

Unit  

V

V

(BR)CBO  

I

C

= 10

μ

A, I

E

=0  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

*

V

(BR)CEO  

I

C

= 10mA,

 

I

B

=0  

V

V

(BR)EBO  

I

E

=10

μ

A, I

C

=0  

V

I

CB  

V

CB

=60

V

,

I

E

=0  

0.01  

0.01  

0.1  

µA  

µA  

µA  

O

I

CE  

V

CE

=30

V

, V

BE(off)

=3V  

V

EB

= 3V,

 

I

C

=0  

Collector cut-off current  

X

I

EBO  

Emitter cut-off current  

*

h

FE(1)  

V

CE

=10

V

,

I

C

= 150mA  

V

CE

=10

V

,

I

C

= 0.1mA  

V

CE

=10

V

,

I

C

= 500mA  

100  

40  

300  

h

FE(2)  

DC current gain  

*

h

FE(3)  

42  

I

C

=500 mA, I

B

= 50mA  

I

C

=150 mA, I

B

=15mA  

I

C

=500 mA, I

B

= 50mA  

I

C

=150 mA, I

B

=15mA  

V

CE

=20

V

,

I

C

= 20mA,  

f=100MHz  

1

*

V

CE(sat)  

Collector-emitter saturation voltage  

V

V

0.3  

2.0  

1.2  

*

V

BE(sat)  

Base-emitter saturation voltage  

Transition frequency  

f

T  

t

d  

300  

MHz  

nS  

10  

25  

Delay time  

Rise time  

Storage time  

Fall time  

V

CC

=30

V

, V

BE(off)

=-0.5V  

I

C

=150mA , I

B1

= 15mA  

t

r  

t

S  

t

f  

nS  

nS  

nS  

225  

60  

V

CC

=30

V

,

I

C

=150mA  

I

B1

=-I

B2

=15mA  

*pulse test: Pulse Width

≤

300

μ

s, Duty Cycle

≤

2.0%.  

1

3

2  

MMB

T

A

S

2

O

I

2

2

3

2

3

4

2

0

0

A

5

0  

Typical Characteristics  

1000  

350  

300  

250  

T

A

= 125°C  

100  

T

A

= +25°C  

T

A

= -25°C  

200  

150  

10  

100  

50  

0

V

1

200  

0

175  

25  

50  

150  

75 100

 

125  

1

1000  

10  

0.1  

100  

T

A

, AMBIENT TEMPERATURE (°C)  

I

C

, COLLECTOR CURRENT (mA)  

Fig. 1, Max Power Dissipation vs  

Ambient

T

e

mperature  

Fig. 2, Typical DC Current Gain vs  

Collector Current  

2.0  

30  

20  

I

C

= 30mA  

1.8  

1.6  

1.4  

1.2  

1.0  

I

C

= 1mA  

I

C

= 10mA  

Cibo  

I

C

= 100mA  

10  

I

C

= 300mA  

0.8  

0.6  

0.4  

5.0  

1.0  

Cobo  

0.2  

0

0.1  

0.001  

0.01  

10  

100  

1

1.0  

10  

50  

0.1  

I

B

, BASE CURRENT (mA)  

Fig. 4 Typical Collector Saturation Region  

REVERSE VOLTS (V)  

Fig. 3

 

Typical Capacitance  

2

1  

MMB

T

A

S

2

O

I

2

2

3

2

3

4

2

0

0

A

5

0  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

3

2

1