TWGMC-MMBT2907A
| Part # | TWGMC-MMBT2907A |
Download  | TWGMC-MMBT2907A |
MMB
T
A
S
2
O
I
9
2
3
0
3
4
7
0
0
A
5
0
SOT-23 Plastic-Encapsulate
Transistors
MMBT2907A
TRANSISTOR (PNP)
FEATURES
z
z
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A)
Base 2.Emitter
3.Collector
SOT-23 Plastic Package
Marking: 2F
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
V
-60
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-5
V
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
-600
250
mA
mW
℃/W
℃
P
D
500
R
θJA
T
J
150
Storage Temperature
-55 to +150
T
stg
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CBO
Test conditions
Min
-60
-60
-5
Typ
Max
-10
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10μA,I
E
=0
I
C
=-10mA,I
B
=0
V
I
E
=-10μA,I
C
=0
V
V
CB
=-50V,I
E
=0
nA
h
FE(1)*
h
FE(2)*
h
FE(3)*
h
FE(4)*
h
FE(5) *
V
CE(sat)*
V
CE(sat)*
V
BE(sat)*
V
BE(sat)*
f
T
V
CE
=-10V,I
C
=-0.1mA
V
CE
=-10V,I
C
=-1mA
V
CE
=-10V,I
C
=-10mA
V
CE
=-10V,I
C
=-150mA
V
CE
=-10V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20V,I
C
=-50mA,f=100MHz
75
100
100
100
50
DC current gain
300
-0.4
-1.60
-1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
-2.6
V
Transition frequency
Delay time
200
MHz
ns
ns
ns
ns
t
d
10
40
80
30
V
CE
=-30V,I
C
=-150mA,
B1
=-15mA
Rise time
t
r
Storage time
Fall time
t
S
V
CE
=-6V,I
C
=-150mA, I
B1
=- I
B2
=- 15mA
t
f
1
MMB
T
A
S
2
O
I
9
2
3
0
3
4
7
0
0
A
5
0
Typical Characteristics
h
FE
—
—
I
C
Static Characteristic
-0.25
-0.20
-0.15
-0.10
-0.05
-0.00
500
400
300
200
100
0
COMMON EMITTER
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
-800uA
-720uA
-640uA
-560uA
T
a
=100
℃
T
a
=25
℃
-480uA
-400uA
-320uA
-240uA
-160uA
I
B
=-80uA
-0
-2
-4
-6
-8
-10
-12
-0.1
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
—— I
C
V
CEsat
—— I
C
-0.9
-0.6
-0.3
-0.0
-1.2
-0.8
-0.4
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-0.0
100
-1
-10
-100
-1
-10
-100
-600
-1.0
150
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—
— V
BE
C
ob
/ C
ib
—
— V
CB
/ V
EB
-600
-100
f=1MHz
I
E
=0/ I
C
=0
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
C
ib
C
ob
T
a
=100
℃
-10
-1
10
T
a
=25
℃
-0.1
-0.0
1
-0.1
-0.2
-0.4
-0.6
-0.8
-1
-10
-20
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
P
c
—
—
T
a
300
250
200
150
100
50
0
0
25
50
75
100
125
AMBIENT TEMPERATURE
T
a
(
℃
)
2
1
MMB
T
A
S
2
O
I
9
2
3
0
3
4
7
0
0
A
5
0
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
3
2
1
