TWGMC-MMBT3904

MM

A

B

S

O

T

I

2

3

3

3

9

4

0

0

0

5

4

0  

MMBT3904  

TRANSISTOR (NPN)  

FEATURES  

•

•

•

Epitaxial Planar Die Construction  

Complementary PNP Type Available (MMBT3906)  

Ideal for Medium Power Amplification and Switching  

SOT-23  

MARKING: 1AM  

1

．

BASE  

2

．

EMITTER  

3

．

COLLECTOR  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

Unit  

60  

40  

V

V

V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

6

V

Collector Current  

200  

2

00  

625  

mA  

T

o

tal Device Dissipation  

ThermalResistanceFromJunction

toAmbient  

mW  

P

C  

℃

/W  

R

θ

JA  

℃

℃

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

T

J  

-55 ~ +150  

T

stg  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

Max  

Unit  

V

(BR)  

I

C

= 10μA,

 

I

E

=0  

60  

40  

6

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

CBO  

V

(BR)  

I

C

= 1mA,

 

I

B

=0  

V

CEO  

V

(BR)  

I

E

=10μA, I

C

=0  

V

EBO  

I

CBO  

I

CEX  

V

CB

=60

V

,

I

E

=0  

0.1  

50  

μA  

nA  

μA  

Collector cut-off  

Collector cut-off  

Emitter cut-off  

current  

current  

V

CE

=30

V

,

V

BE(off)

=3V  

V

EB

=5

V

,

I

C

=0  

I

EBO  

0.1  

300  

current  

h

FE(1)  

h

FE(2)  

h

FE(3)  

V

CE(sat)  

V

BE(sat)  

V

CE

=1

V

,

I

C

=10mA  

V

CE

=1

V

,

I

C

= 50mA  

V

CE

=1

V

,

I

C

= 100mA  

I

C

=50mA, I

B

= 5mA  

I

C

= 50mA,

 

I

B

= 5mA  

100  

60  

DC current gain  

30  

0.3  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Transition frequency  

Delay Time  

0.95  

300  

MHz  

nS  

nS  

nS  

nS  

f

T  

V

CE

=20

V

,

I

C

=10mA,

f=

100MHz  

V

CC

=3V,  

V

35  

35  

t

d  

I

C

=10mA, I

B1

=-I

B2

=1.0mA  

V

CC

=3V, I

C

=10mA,  

I

B1

=-I

B2

=1mA  

Rise Time  

t

r

200  

50  

Storage Time  

t

s  

Fall Time  

t

f  

1

MM

A

B

S

O

T

I

2

3

3

3

9

4

0

0

0

5

4

0  

Typical Characteristics  

I

C  

h

FE

—

—  

Static C

a

h

r

acteristic  

100  

80  

60  

40  

20  

0

400  

300  

200  

100  

0

COMMON EMITTER  

V

CE

=1V  

COMMON  

EMITTER  

T

a

=25

℃

 

500uA  

450uA  

T

a

=100

℃  

400uA  

350uA  

300uA  

T

a

=25

℃  

250uA  

200uA  

150uA  

100uA  

I

B

=50uA  

0.1  

0.3  

1

3

10  

30  

100  

0

4

8

12  

16  

20  

200  

1.2  

60  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

I

C  

V

BEsat

——  

V

CEsat  

—

I

C  

1.2  

0.8  

0.4  

600  

300  

T

a

=25

℃  

T

a

=100

℃  

100  

T

a

=100

℃  

T

a

=25

℃  

30  

10  

β

=10  

β

=10  

0.0  

1

3

10  

30  

100  

1

3

10  

100  

300  

30  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

I

C

—

—

V

BE  

C

ob

/ C

ib

—

—  

V

CB

/ V

EB  

9

100  

COMMON EMITTER  

V

CE

=1V  

f=1MHz  

I

E

=0/I

C

=0  

30  

10  

T

a

=25

℃  

C

ib  

T

a

=100

℃  

3

3

1

C

ob  

T

a

=25

℃  

0.3  

0.1  

1

0.1  

0.3  

1

3

10  

20  

0.2  

0.4  

0.6  

0.8  

1.0  

BASE-EMITTER VOLTAGE

 

V

BE

(V)  

REVERSE VOLTAGE  

V

(V)  

P

C

—

—

T

a  

f

T

—

—

I

C  

300  

250  

V

CE

=20V  

T

a

=25

℃  

200  

150  

100  

50  

200  

100  

0

1

3

10  

0

25  

50  

75  

100  

125  

150  

30  

COLLECTOR CURRENT

 

I

C

(mA)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

2

1  

MM

A

B

S

O

T

I

2

3

3

3

9

4

0

0

0

5

4

0  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

3

2

1