TWGMC-MMBT3904M

Part #	TWGMC-MMBT3904M
Download	TWGMC-MMBT3904M

MMBT3904M

SOT-723

MMBT3904M

TRANSISTOR (NPN)

FEATURE



Complementary to MMBT3906M



Small Package

1

.

BASE

2

.

EMITTER

3.COLLECTOR

MARKING: 1N

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted

)

Symbol

V

CBO

V

CEO

V

EBO

I

C

Parameter

Value

60

Unit

V

Collector-Base Voltage

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

6

V

Collector Current -Continuous

Power Dissipation

0.2

A

P

C

0.1

W

R

Θ

JA

Thermal Resistance from Junction to Ambient

Operation Junction

and Storage Temperature Range

1250

-55~+150

℃

/W

T

J

,

T

stg

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)

Parameter

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CEX

Test conditions

Min

60

40

6

Typ

Max

Unit

V

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I

C

=10µA,I

E

=0

I

C

=1mA,I

B

=0

V

I

E

=10µA,I

C

=0

V

V

CE

=30V,V

EB(off)

=3V

V

EB

=5V,I

C

=0

50

nA

nA

Emitter cut-off current

I

EBO

100

h

FE(1)

h

FE(2)

h

FE(3)

h

FE(4)

V

CE(sat)1

V

CE(sat)2

V

BE(sat)1

V

BE(sat)2

f

T

V

CE

=1V,I

C

=0.1mA

V

CE

=1V,I

C

=1mA

40

70

DC current gain

V

CE

=1V,I

C

=10mA

100

60

300

V

CE

=1V,I

C

=50mA

I

C

=10mA,I

B

=1mA

0.2

0.3

V

V

Collector-emitter saturation voltage

Base-emitter saturation voltage

I

C

=50mA,I

B

=5mA

I

C

=10mA,I

B

=1mA

0.65

300

0.85

0.95

V

I

C

=50mA,I

B

=5mA

V

Transition frequency

Output capacitance

Input capacitance

Noise figure

V

CE

=20V,I

C

=10mA,f=100MHz

V

CB

=5V,I

E

=0,f=1MHz

V

EB

=0.5V,I

C

=0,f=1MHz

V

CE

=5V,I

C

=0.1mA,f=1MHz,R

S

=1k

Ω

MHz

pF

pF

dB

ns

ns

ns

ns

C

ob

4

8

C

ib

NF

5

35

35

200

50

Delay time

t

d

V

CC

=3V,V

BE(off

)

=-0.5V,

I

C

=10mA,I

B1

=1mA

Rise time

t

r

Storage time

Fall time

t

s

V

CC

=3V,I

C

=10mA

I

B1

=I

B2

=1mA

t

f

1

MMBT3904M

Typical Characteristics

h

FE

—— I

C

Static Characteristic

100

80

60

40

20

0

400

300

200

100

0

COMMON EMITTER

V

CE

=1V

COMMON

EMITTER

500uA

450uA

T

a

=25

℃

T

a

=100

℃

400uA

350uA

300uA

T

a

=25

℃

250uA

200uA

150uA

100uA

I

B

=50uA

0.1

0.3

1

3

10

30

100

0

4

8

12

16

20

200

1.2

60

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

I

C

V

BEsat

——

V

CEsat

—— I

C

1.2

0.8

0.4

600

300

T

a

=25

℃

T

a

=100

℃

100

T

a

=100

℃

T

a

=25

℃

30

10

β

=10

β

=10

0.0

1

3

10

30

100

1

3

10

COLLECTOR CURRENT

I

C

(mA)

100

300

30

COLLECTOR CURRENT

I

C

(mA)

I

C

—— V

BE

C

ob

/ C

ib

——

V

CB

/ V

EB

9

100

COMMON EMITTER

V

CE

=1V

f=1MHz

I

E

=0/I

C

=0

30

10

T

a

=25

℃

C

ib

T

a

=100

℃

3

3

1

C

ob

T

a

=25

℃

0.3

0.1

1

0.1

0.3

1

3

10

20

0.2

0.4

0.6

0.8

1.0

REVERSE VOLTAGE

V

(V)

BASE-EMMITER VOLTAGE

V

BE

(V)

P

C

—— T

a

f

T

—— I

C

300

200

V

CE

=20V

T

a

=25

℃

150

100

50

200

100

0

1

3

10

0

25

50

75

100

125

150

30

AMBIENT TEMPERATURE

T

a

(

℃

)

COLLECTOR CURRENT

I

C

(mA)

2

MMBT3904M

SO

T

–

7

23 Package Outline Dimensions

Dimensions In Millimeters

Dimensions In Inches

Symbol

Min.

0.430

0.000

0.170

0.270

0.080

1.150

1.150

0.750

Max.

0.500

0.050

0.270

0.370

0.150

1.250

1.250

0.850

Min.

0.017

0.000

0.007

0.011

0.003

0.045

0.045

0.030

Max.

0.020

0.002

0.011

0.015

0.006

0.049

0.049

0.033

A

A1

b

b1

c

D

E

E1

e

θ

0.800T

Y

P

.

7° REF.

0.031T

Y

P

.

7° REF.

SO

T

–

7

23 Suggested Pad Layout

3