TWGMC-MMBT3906
| Part # | TWGMC-MMBT3906 |
Download  | TWGMC-MMBT3906 |
MM
A
B
S
O
T
I
2
3
3
3
9
4
0
0
0
5
4
6
0
MMBT3906
TRANSISTOR
（
PNP
）
FEATURES
Complementary Type The NPN Transistor
MMBT3904 is Recommended
SOT-23
Epitaxial Planar Die Construction
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: 2A
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Unit
Collector-Base Voltage
-40
V
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current
-200
200
mA
mW
℃
/W
℃
P
C
T
o
tal Device Dissipation
Thermal Resistance Junction to Ambient
Junction
T
e
mperature
R
θ
JA
T
J
625
150
℃
T
stg
Storage
T
e
mperature
-55 ~ +150
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
I
C
=-10
μ
A, I
E
=0
I
C
=-1mA, I
B
=0
Test conditions
Min
Max
Unit
-40
-40
-5
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V
(BR)
CEO
V
V
(BR)EBO
I
E
=-10
μ
A, I
C
=0
I
CBO
V
CB
=-40
V
,
I
E
=0
I
CEX
V
CE
=-30
V
,
BE(off)
=-3V
V
-0.1
-50
µA
nA
µA
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
V
I
EBO
V
EB
=-5
V
,
I
C
=0
-0.1
300
current
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
V
CE
=-1
V
,
I
C
=-10mA
V
CE
=-1
V
,
I
C
= -50mA
V
CE
=-1
V
,
I
C
= -100mA
I
C
=-50mA,
B
= -5mA
I
C
= -50mA,
I
B
=-5mA
100
60
DC current gain
30
-0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
-0.95
300
MHz
nS
nS
nS
nS
f
T
V
CE
=-20
V
,
I
C
=-10mA,
f=
100MHz
V
CC
=-3
V
,
V
BE
=-0.5V
35
35
t
d
I
C
=-10mA, I
B1
=-I
B2
=-1mA
V
CC
=-3
V
,
I
C
=-10mA,
I
B1
=-I
B2
=-1mA
Rise Time
t
r
225
75
Storage Time
t
s
Fall Time
t
f
1
MM
A
B
S
O
T
I
2
3
3
3
9
4
0
0
0
5
4
6
0
Typical Characteristics
I
C
h
FE
—
—
Static Characteristic
-100
-80
-60
-40
-20
-0
300
200
100
0
COMMON EMITTER
V
CE
=-1V
COMMON
EMITTER
T
a
=25
℃
-500uA
-450uA
-400uA
T
a
=100
℃
-350uA
-300uA
T
a
=25
℃
-250uA
-200uA
-150uA
-100uA
I
B
=-50uA
-0.1
-1
-3
-10
-100
-0
-4
-8
-12
-16
-20
-200
-1.2
-0.3
-30
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—
I
C
I
C
V
BEsat
—
—
-1.2
-0.8
-0.4
-500
-300
T
a
=25
℃
T
a
=100
℃
-100
T
a
=100
℃
T
a
=25
℃
-30
-10
β=10
β=10
-0.0
-10
-1
-3
-10
-30
-100
-1
-3
-30
-100
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
—
—
V
CB
/ V
EB
I
C
—
—
V
BE
9
-100
COMMON EMITTER
V
CE
=-1V
f=1MHz
I
E
=0/I
C
=0
-30
-10
T
a
=25
℃
C
ob
T
a
=100
℃
C
ib
-3
-1
3
T
a
=25
℃
-0.3
-0.1
1
-0.1
-1
-3
-10
-0.3
-20
-0.2
-0.4
-1.0
-0.6
-0.8
REVERSE VOLTAGE
V
(V)
BASE-EMI
T
TER VOLTAGE
V
BE
(V)
P
C
—
—
T
a
f
T
—
—
I
C
600
250
V
CE
=-20V
T
a
=25
℃
200
150
100
50
400
200
0
-1
-3
-10
0
25
50
75
100
125
150
-50
-30
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
1
MM
A
B
S
O
T
I
2
3
3
3
9
4
0
0
0
5
4
6
0
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
3
2
1
