TWGMC-MMBT3906W
| Part # | TWGMC-MMBT3906W |
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MMBT3906W
MMBT3906W
TRANSISTOR(PNP)
for switching and amplifier applications
SOT
–
323
3
1. BASE
1
2. EMITTER
2
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25
Я
unless otherwise noted)
Parameter
Collector Base Voltage
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
Value
Unit
V
40
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
40
V
5
200
V
mA
mW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
P
tot
200
O
C
T
j
150
O
C
T
stg
– 55 to +150
1
MMBT3906W
O
Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -V
CE
= 1 V, -I
C
= 0.1 mA
at -V
CE
= 1 V, -I
C
= 1 mA
at -V
CE
= 1 V, -I
C
= 10 mA
at -V
CE
= 1 V, -I
C
= 50 mA
at -V
CE
= 1 V, -I
C
= 100 mA
h
FE
h
FE
h
FE
h
FE
h
FE
60
80
100
60
–
–
–
–
–
–
–
300
–
–
30
Collector Emitter Cutoff Current
at -V
CE
= 30 V
-I
CES
–
–
50
50
–
nA
nA
V
Emitter Base Cutoff Current
at -V
EB
= 3 V
-I
EBO
Collector Base Breakdown Voltage
at -I
C
= 10 µA
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
40
40
5
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
–
V
Emitter Base Breakdown Voltage
at -I
E
= 10 µA
–
V
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
–
–
0.25
0.4
-V
CE(sat)
V
V
Base Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 1 mA
at -I
C
= 50 mA, -I
B
= 5 mA
0.65
–
0.85
0.95
-V
BE(sat)
Transition Frequency
at -V
CE
= 20 V, I
E
= 10 mA, f = 100 MHz
f
T
C
ob
t
d
250
–
MHz
pF
ns
Collector Output Capacitance
at -V
CB
= 10 V, f = 100 KHz
–
–
–
–
–
4.5
35
Delay Time
at -V
CC
= 3 V, -V
BE(OFF)
= 0.5 V, -I
C
= 10 mA, -I
B1
= 1 mA
Rise Time
t
r
35
ns
at -V
CC
= 3 V, -V
BE(OFF)
= 0.5 V, -I
C
= 10 mA, -I
B1
= 1 mA
Storage Time
at -V
CC
= 3 V, -I
C
= 10 mA, I
B1
= -I
B2
= -1 mA
t
stg
t
f
225
75
ns
Fall Time
ns
at -V
CC
= 3 V, -I
C
= 10 mA, I
B1
= -I
B2
= -1 mA
2
MMBT3906W
300
250
200
150
100
50
0
0
25
100
Ambient Temperature: Ta ( C)
Fig.10 Power
Dissipation vs Ambient Temperature
125
50
75
150
O
4
