TWGMC-MMBT4401
| Part # | TWGMC-MMBT4401 |
Download  | TWGMC-MMBT4401 |
MM
A
B
S
O
T
I
2
3
4
3
3
9
4
4
0
0
0
5
4
1
0
MMBT4401 TRANSISTOR
( NPN)
FEATURES
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT4403)
Ideal for Medium Power Amplification and Switching
SOT-23
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: 2X
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
Collector-Base Voltage
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
40
6
V
V
Collector Current -Continuous
Collector Power dissipation
Junction
T
e
mperature
600
mA
W
0.3
P
C
℃
150
T
j
Storage
T
e
mperature
℃
℃
/mW
-55 to +150
417
T
stg
Thermal Resistance, junction to Ambient
R
Ө
JA
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Symbol
Test conditions
MIN
60
40
6
MAX UNIT
Parameter
V
(BR)CBO
I
C
= 100
μ
A, I
E
=0
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CEO
I
C
= 1mA,
I
B
=0
V
(BR)EBO
I
E
= 100
μ
A, I
C
=0
V
CB
=50
V
,
I
E
=0
V
CE
=30
V
,
I
B
=0
I
CB
0.1
0.1
μ
μ
μ
A
A
A
O
I
CE
Collector cut-off current
O
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
EB
=5
V
,
I
C
=0
0.1
300
0.4
Emitter cut-off current
V
CE
=1V, I
C
=150mA
I
C
=150mA,
B
=15mA
100
250
DC current gain
V
Collector-emitter saturation voltage
I
C
= 150mA,
I
B
=15mA
0.95
V
Base-emitter saturation voltage
Transition frequency
V
CE
= 10
V
,
I
C
= 20mA
f =
100MHz
MHz
f
T
1
MM
A
B
S
O
T
I
2
3
4
3
3
9
4
4
0
0
0
5
4
1
0
Typical Characteristics
Static Characteri
stic
h
FE
—
—
I
C
250
200
150
100
50
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
= 1V
1mA
T
a
=100
℃
0.9mA
0.8mA
T
a
=25
℃
0.7mA
0.6mA
100
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=0.1mA
0
10
600
0
1
2
3
4
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
BEsat
——
I
C
V
CEsat
—
—
I
C
1000
1000
800
600
400
200
0
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
10
0.5
600
0.1
1
10
100
0.1
1
10
100
600
COLLECTOR CURRE
N
T I
C
(mA)
COLLECTOR CURRE
N
T I
C
(mA)
I
C
—
—
V
BE
f
T
—
—
I
C
500
600
COMMON EMITTER
V
CE
=1V
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
100
10
1
100
T
a
=100
℃
T
a
=25
℃
0.1
10
0
200
400
600
800
1000
1200
10
20
30
40
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VO
L
TAGE V
BE
(mV)
C
ob
/C
ib
—
—
P
C
—
— T
a
V
CB
/V
EB
400
300
200
100
0
100
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0.1
0
25
50
75
100
125
150
30
1
10
AMBIENT TEMPERATURE
T
a
(
℃
)
REVERSE VOLTAGE
V
(V)
2
1
MM
A
B
S
O
T
I
2
3
4
3
3
9
4
4
0
0
0
5
4
1
0
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
3
2
1
