TWGMC-S8550

Part #TWGMC-S8550
Download 
TWGMC-S8550
S8550  
S8550  
TRANSISTOR (PNP)  
FEATURES  
SOT-23  
Complimentary to S8050  
Collector current: I

C

=0.5A  
1
.
BASE  
2
.
EMITTER  
3
.
COLLECTOR  
MARKING :  
2TY  
MAXIMUM RATINGS (T

A

=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
-40  
Units  
V

CBO  

Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V

CEO  

V

EBO  

I

C  

-25  
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction
T
e
mperature  
-0.5  
A
P

C  

0.3  
W
℃
℃
T

j  

150  
T

stg  

Storage
T
e
mperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)  
Symbol  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  
I

C

= -100
µA
I

E

=0  
I

C

=-1mA, I

B

=0  
I

E

= -100
µA
I

C

=0  
MIN  
-40  
-25  
-5  
MAX UNIT  
Parameter  
V
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
,
,
V

CB

= -40
V
,
 
I

E

=0  
-0.1  
-0.1  
-0.1  
350  
µA  
µA  
µA  
I

CEO  

V

CE

= -20
V
,
 
I

B

=0  
Collector cut-off current  
I

EBO  

V

EB

= -3
V
,
 
I

C

=0  
Emitter cut-off current  
h

FE(1)  

V

CE

= -1
V
,
 
I

C

= -50mA  
V

CE

= -1
V
,
 
I

C

= -500mA  
I

C

=-500mA, I

B

= -50mA  
200  
50  
DC current gain  
h

FE(2)  

V

CE

(sat)  
V

BE

(sat)  
-0.6  
-1.2  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
I

C

=-500mA, I

B

= -50mA  
V

CE

= -6
V
,
 
I

C

= -20mA  
f=
30MHz  
150  
MHz  
Transition frequency  
f

T  

1

S8550  
Typical Characteristics  
I

C  

h

FE

—
—  
Static Characteristic  
100  
80  
60  
40  
20  
0
1000  
COMMON EMITTER  
V

CE

=1V  
COMMON  
EMITTER  
T

a

=25
℃
 
400uA  
350uA  
300uA  
T

a

=100
℃  
T

a

=25
℃  
250uA  
200uA  
100  
150uA  
100uA  
I

B

=50uA  
10  
1
3
10  
30  
100  
500  
0
4
8
12  
16  
20  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
I

C  

V

BEsat

——  
V

CEsat  

—
I

C  

1.2  
500  
300  
T

a

=25
℃  
0.8  
0.4  
100  
T

a

=100
℃  
T

a

=100
℃  
T

a

=25
℃  
30  
10  
β
=10  
β
=10  
0.0  
30  
500  
1.0  
100  
3
1
3
10  
30  
100  
1
10  
100  
500  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
I

C

—
—
V

BE  

C

ob

/ C

ib

—
—  
V

CB

/ V

EB  

500  
100  
100  
COMMON EMITTER  
V

CE

=1V  
f=1MHz  
I

E

=0/ I

C

=0  
T

a

=25
℃  
C

ib  

30  
10  
30  
10  
T

a

=25
℃  
C

ob  

T

a

=100
℃  
3
1
3
1
0.3  
0.1  
0.1  
0.3  
1
3
10  
20  
0.2  
0.4  
0.6  
0.8  
REVERSE VOLTAGE  
V
(V)  
BASE-EMMITER VOLTAGE
 
V

BE

(V)  
f

T

—
—
I

C  

P

C

—
—
T

a  

400  
1000  
V

CE

=6V  
T

a

=25
℃  
300  
200  
100  
0
100  
10  
10  
0
25  
50  
75  
100  
125  
150  
30  
COLLECTOR CURRENT
 
I

C

(mA)  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
2

S8550  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT-23  
3