TWGMC-SI2301
| Part # | TWGMC-SI2301 |
Download  | TWGMC-SI2301 |
SI2301
A
S
I
O
23
4
0
0
51
SOT-23 Plastic-Encapsulate
MOSFETS
P-Channel 20-V( D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
z
z
Load Switch for Portable Devices
DC/DC Converter
MARKING
Equivalent Circuit
A
A
1
0
1
S
9
H
T
B
1.GATE
2.SOURCE
3.DRAIN
Maximum ratings (T
a
=25
℃
unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
Value
Unit
V
DS
V
GS
I
D
-20
±8
V
A
Gate-Source Voltage
–
2.8
Continuous Drain Current
Pulsed Drain Current
I
DM
I
S
-10
Continuous Source-Drain Diode Current
Maximum Power Dissipation
-0.72
0.
35
P
D
R
W
Thermal Resistance from Junction to Ambient(t
≤
5s)
Junction Temperature
357
JA
θ
℃
/W
T
J
150
℃
Storage Temperature
T
stg
-55 ~
+
150
1
A
S
S
I
O
2
I
2
3
3
4
0
0
5
1
Electrical characteristics (T
a
=25
℃
unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-
s
ource
b
reakdown
v
oltage
Gate-
s
ource
t
hreshold
v
oltage
Gate-
s
ource
l
eakage
Zero
g
ate
v
oltage
d
rain
c
urrent
V
(BR)
DS
S
V
GS(th)
I
GSS
V
GS
= 0V, I
D
=-250µA
V
DS
=V
GS
, I
D
=-250µA
V
DS
=0V, V
GS
=
±
8V
V
DS
=-20V, V
GS
=0V
V
GS
=-4.5V, I
D
=-
2.8
A
V
GS
=-2.5V, I
D
=-2.0A
V
DS
=-5V, I
D
=-2.8A
-20
V
-0.4
-1
±
100
-1
nA
µA
I
DSS
0.0
90
0.
110
6
.
5
0.11
2
0.14
2
Drain-
s
ource
o
n-
s
tate
r
esistance
a
R
DS(on)
g
fs
Ω
Forward
t
ransconductance
a
Dynamic
b
S
Input
c
apacitance
C
iss
C
oss
C
rss
405
75
V
DS
=-10V,V
GS
=0V,f =1MHz
V
DS
=-10V,V
GS
=-4.5V,I
D
=-3A
V
DS
=-10V,V
GS
=-2.5V,I
D
=-3A
f =1MHz
pF
Output
c
apacitance
Reverse
t
ransfer
c
apacitance
55
5.5
3.3
0.7
1.3
6.0
11
10
6
Total
g
ate
c
harge
Q
g
nC
Ω
Gate-
s
ource
c
harge
Gate-
d
rain
c
harge
Gate
r
esistance
Turn-
o
n
d
elay
t
ime
Rise
t
ime
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
20
60
50
20
V
DD
=-10V,
35
R
L
=10
ꢀ
,
I
D
=-1A,
ns
Turn-
o
ff
d
elay
t
ime
Fall
t
ime
30
V
GEN
=-4.5V,Rg=1
ꢀ
10
Drain-source
b
ody diode characteristics
Continuous
s
ource-
d
rain
d
iode
current
I
S
-1.3
T
C
=25
℃
A
V
a
-10
Pulse
d
iode
f
orward
c
urrent
I
SM
-1.2
Body
d
iode
v
oltage
V
SD
I
S
=-0.7A
-0.8
Notes :
a.Pulse
T
e
st : Pulse Width < 300µs, Duty Cycle
≤
2%.
b.Guaranteed by design, not subject to production testing.
2
A
S
S
I
O
2
I
2
3
3
4
0
0
5
1
Typical Characteristics
Output Characteristics
Transfer Characteristics
-14
-12
-10
-8
-10
-8
V
GS
= -4.0V,-3.5V,-3.0V,-2.5V
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=-2.0V
-6
-6
-4
V
GS
=-1.5V
-4
-2
-2
V
GS
=-1.0V
-0
-0
-0
-1
-2
-3
-4
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— I
D
R
DS(ON)
—— V
GS
150
120
90
60
30
0
250
200
150
100
50
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
V
GS
=-2.5V
V
GS
=-4.5V
I
D
=-3.6A
0
-0
-2
-4
-6
-8
-10
-0
-2
-4
-6
-8
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
—— V
SD
-1
T
a
=25
℃
Pulsed
-0.3
-0.1
-0.03
-0.01
-3E-3
-1E-3
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
3
