TWGMC-SI2302
| Part # | TWGMC-SI2302 |
Download  | TWGMC-SI2302 |
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S
I
2
I
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3
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Equivalent Circuit
MARKING
3400
R
A
3
2
4
S
0
H
0
B
1.GATE
2.SOURCE
3.DRAIN
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1
S
S
I
2
I
2
3
3
0
0
5
1
2
Electrical characteristics (T
a
=25
Я
unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static
Drain-source breakdown voltage
Gate-threshold voltage
V
(BR)DSS
V
GS
= 0V, I
D
=10
μ
A
20
V
0.95
V
GS(th)
I
GSS
V
DS
=V
GS
, I
D
=50
μ
A
V
DS
=0V, V
GS
=±8V
V
DS
=20V, V
GS
=0V
V
GS
=4.5V, I
D
=
ꢀ
2
ꢁ
.
ꢂ
8
A
V
GS
=2.5V, I
D
=
ꢀ
.
ꢄ
A
V
DS
=5V, I
D
=3.6A
I
S
=0.94A,V
GS
=0V
0.
ꢂ
1.2
ꢂ
±100
1
Gate-body leakage
nA
Zero gate voltage drain current
I
DSS
μ
A
0.0
ꢃꢂ
0.0
ꢅꢄ
8
0.0
ꢂꢂ
0.
ꢄꢆꢄ
Drain-source on-resistance
a
r
DS(on)
Forward transconductance
a
Diode forward voltage
Dynamic
g
fs
S
V
1.2
V
SD
0.76
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance
b
Output capacitance
b
Reverse transfer capacitance
b
Switching
b
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
4
ꢁꢄ
0.65
1.5
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
V
DS
=10V,V
GS
=0V,f=1MHz
nC
pF
300
120
80
Turn-on delay time
Rise time
t
d
7
(on)
V
DD
=10V,
t
r
t
d(off)
t
f
55
16
10
R
L
=5.5
ȍ
,
I
D
§
3.6A,
ns
Turn-off delay time
Fall time
V
GEN
=4.5V,Rg=6
ȍ
Notes :
a. Pulse
T
e
st : Pulse width
300
μ
s, duty cycle
2%.
b. These
parameters have no way to verify.
2
1
S
S
I
2
I
2
3
3
0
0
5
1
2
7SLFDOꢃ&KDUDFWHULVWLFV
Output Characteristics
Transfer Characteristics
10
8
15
12
9
V
GS
=3.5V,3.0V,2.5V
T
a
=25
ć
T
a
=25
ć
Pulsed
Pulsed
V
GS
=2.0V
6
4
6
V
GS
=1.5V
2
3
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
—— V
GS
R
DS(ON)
—— I
100
80
60
40
20
0
0.20
0.16
0.12
0.08
0.04
0.00
T
a
=25
ć
T
a
=25
ć
Pulsed
Pulsed
V
GS
=2.5V
V
GS
=4.5V
I
D
=4.5A
0
5
10
15
20
25
30
0
2
4
6
8
10
GATE TO SOURCE VOLTAGE
V
GS
(V)
DRAIN CURRENT
I
D
(A)
3
1
