TWGMC-SS8050

Part #TWGMC-SS8050
Download 
TWGMC-SS8050
SS8050  
S
S8050  
TR
ANSISTOR
(NPN)  
FEATURES  
Complimentary to SS8550  
SOT-23  
1
.
BASE  
MARKING: Y1  
2
.
EMITTER  
3
.
COLLECTOR  
MAXIMUM RATINGS (T

A

=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
40  
Units  
V
V

CBO  

Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V

CEO  

V

EBO  

I

C  

25  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction
T
e
mperature  
1.5  
A
P

C  

0.3  
W
℃
℃
T

j  

150  
-55-150  
T

stg  

Storage Temperature  
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)  
Parameter  
Symbol  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

Test conditions  
I

C

= 100
μ
I

E

=0  
I

C

= 0.1mA,
 
I

B

=0  
I

E

=100
μ
I

C

=0  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
A
,
V
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
A
,  
I

CB  

V

CB

=40
V
,
I

E

=0  
0.1  
0.1  
0.1  
350  
μ
A  
μ
A  
μ
A  
O
I

CE  

V

CB

=20
V
,
I

E

=0  
Collector cut-off current  
O
I

EBO  

h

FE(1)  

V

EB

= 5
V
,
 
I

C

=0  
Emitter cut-off current  
V

CE

=1
V
,
I

C

= 100mA  
V

CE

=1
V
,
I

C

= 800mA  
I

C

=800mA, I

B

= 80mA  
I

C

=800mA, I

B

= 80mA  
200  
40  
DC current gain  
h

FE(2)  

V

CE(sat)  

V

BE(sat)  

0.5  
1.2  
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
V

CE

=10
V
,
I

C

= 50mA  
f=30MHz  
f

T  

100  
MHz  
Transition frequency  
1

SS8050  
Typical Characteristics  
I

C  

h

FE

—
—  
Static Characteristic  
140  
120  
100  
80  
1000  
COMMON EMITTER  
V

CE

=1V  
500uA  
COMMON  
EMITTER  
T

a

=25
℃
 
450uA  
400uA  
350uA  
T

a

=100
℃  
T

a

=25
℃  
300  
100  
300uA  
250uA  
200uA  
150uA  
60  
40  
30  
10  
100uA  
I

B

=50uA  
20  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
1
3
10  
100  
1000 1500  
30  
300  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

BEsat

—— I

C  

I

C  

V

CEsat

—
—  
1000  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
300  
100  
T

a

=100
℃  
T

a

=25
℃  
30  
10  
T

a

=25
℃  
T

a

=100
℃  
3
1
β
=10  
β
=10  
1
3
10  
30  
100  
1000  
1
3
10  
30  
100  
300  
1000  
1500  
300  
1500  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
I

C  

V

BE

—
—  
V

CB

/ V

EB  

C

ob

/ C

ib

—
—  
200  
100  
1500  
1000  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

300  
100  
T

a

=100
℃  
30  
10  
C

ob  

30  
10  
T

a

=25
℃  
3
1
3
1
COMMON EMITTER  
V

CE

=1V  
3
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0.1  
0.3  
1
10  
20  
REVERSE VOLTAGE  
V
(V)  
BASE-EMMITER VOLTAGE
 
V

BE

(V)  
I

C  

f

T

—
—  
P

C

—
—
T

a  

1000  
350  
300  
250  
200  
150  
100  
50  
300  
100  
30  
10  
3
1
V

CE

=10V  
T

a

=25
℃  
0
30  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
3
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
COLLECTOR CURRENT
 
I

C

(mA)  
2

SS8050  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT-23  
3