TWGMC-SS8550

Part #TWGMC-SS8550
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TWGMC-SS8550
SS8550  
SS8550  
TRANSISTOR
(
PNP
)  
FEATURES  
Complimentary to SS8050  
SOT-23  
1
.
BASE  
2
.
EMITTER  
3
.
COLLECTOR  
MARKING: Y2  
MAXIMUM RATINGS (T

A

=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
-40  
Units  
V
V

CBO  

Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V

CEO  

V

EBO  

I

C  

-25  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction
T
e
mperature  
-1.5  
0.3  
A
P

C  

W
℃
℃
T

j  

150  
T

stg  

Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)  
Parameter  
Symbol  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  
I

C

=-100
µA
I

E

=0  
I

C

=-0.1mA, I

B

=0  
I

E

=-100
µA
I

C

=0  
MIN  
-40  
-25  
-5  
MAX UNIT  
,
V
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
,
V

CB

=-40
V
,
I

E

=0  
-0.1  
-0.1  
-0.1  
350  
µA  
µA  
µA  
I

CEO  

V

CE

=-20
V
,
I

B

=0  
Collector cut-off current  
I

EBO  

V

EB

=-5
V
,
I

C

=0  
Emitter cut-off current  
h

FE(1)  

V

CE

=-1
V
,
I

C

=-100mA  
V

CE

=-1
V
,
I

C

=-800mA  
I

C

=-800mA, I

B

=-80mA  
I

C

=-800mA, I

B

=-80mA  
I

C

=-1
V
, V

CE

=-10mA  
200  
40  
DC current gain  
h

FE(2)  

V

CE(sat)  

V

BE(sat)  

V

BE(on)  

V

BEF  

-0.5  
-1.2  
-1  
V
V
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
I

B

=-1A  
-1.55  
Base-emitter positive favor voltage  
V

CE

= -10
V
,
 
I

C

= -50mA  
f=30MHz  
f

T  

100  
MHz  
pF  
Transition frequency  
output capacitance  
C

ob  

(V

CB

=-10
V
,
I

E

=0,f=1MHz)  
20  
1

SS8550  
Typical Characteristics  
h

FE

—
—  
I

C  

Static Characteristic  
500  
-180  
-160  
-140  
-120  
-100  
-80  
1mA  
0.9mA  
Ta=100
℃
 
0.8mA  
Ta=25
℃  
0.7mA  
0.6mA  
0.5mA  
100  
0.4mA  
0.3mA  
0.2mA  
-60  
-40  
-20  
I

B

=0.1mA  
-4.5  
V

CE

=-1V  
-1000  
-0  
-0.0  
10  
-0.1  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
-5.0  
-1  
-10  
-100  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
COLLECTOR CURRENT
 
I

C

(mA)  
V

BEsat

—
—  
I

C  

I

C  

V

CEsat  

—
-1000  
-900  
-800  
-700  
-600  
-500  
-400  
-300  
-200  
-1000  
-100  
-10  
Ta=25
℃  
Ta=100
℃  
Ta=25
℃  
Ta=100
℃  
β
=10  
β
=10  
-1  
0.2  
-0.1  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
V

CB

/ V

EB  

V

BE

—
—
I

C  

C

ob

/ C

ib

—
—  
-1000  
-100  
-10  
100  
f=1MHz  
I

E

=0/ I

C

=0  
Ta=25

o

C  
C

ib  

C

ob  

Ta=100

o  

C
Ta=25
℃  
-1  
VCE=-1V  
-900  
-0.1  
-200  
1
-0.2  
20  
-300  
-400  
-500  
-600  
-700  
-800  
-1000  
-1  
-10  
REVERSE VOLTAGE  
V
(V)  
BASE-EMMITER VOLTAGE
 
V

BE

(mV)  
I

C  

Pc
—
—
T
a  
fT
—
—  
500  
350  
300  
250  
200  
150  
100  
50  
100  
VCE-10V  
Ta=25

o

C  
10  
0
-1  
-10  
-100  
0
25  
50  
75  
100  
125  
150  
COLLECTOR CURRENT
 
I

C

(mA)  
AMBIENT TEMPERATURE
 
Ta (
℃
)  
2

SS8550  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT-23  
3