TWGMC-TW1504ESG
| Part # | TWGMC-TW1504ESG |
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TW1504ESG
N-Channel Enhancement Mode Power MOSFET
Features
General Description
V
DS
= 20V,
•
Load / power switching for portable devices
•
Battery operated systems
I
D
= 0.67A
R
DS(ON)
@V
GS
= 4.5V, TYP 255
mΩ
R
DS(ON)
@V
GS
= 2.5V, TYP 348
mΩ
R
DS(ON)
@V
GS
= 1.8V, TYP 542
mΩ
•
Power supply converter circuits
Pin Configurations
SOT523
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
Parameter Symbol
Ratings
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GSS
±
10
0.67
0.53
2
V
T
A
=25°C
T
A
=70°C
Drain Current (Continuous) *AC
I
D
A
Drain Current (Pulse)
*B
Power Dissipation
I
DM
P
D
A
T
A
=25°C
0.22
-55~150
W
℃
Operating Temperature/ Storage Temperature
T
J
/T
STG
Thermal Resistance Ratings
Parameter
Symbol
Maximum
Unit
Maximum Junction-to-Ambient
t
≤
5s
530
°C/W
R
thJA
1
TW1504ESG
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
*D
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 20V, V
GS
= 0V
V
GS
= V
DS
, I
DS
= 250
μ
A
V
GS
=
8V
, V
DS
= 0V
V
GS
= 4.5V, I
D
= 0.5A
20
—
—
—
—
V
μ
A
V
1
0.4
—
—
0.85
±5
Gate Leakage Current
—
μ
A
mΩ
mΩ
mΩ
V
—
255
348
542
—
332
452
705
1.2
0.18
R
DS(on)
R
DS(on)
R
DS(on)
V
SD
V
GS
= 2.5V, I
D
= 0.2A
V
GS
= 1.8V, I
D
= 0.1A
—
Drain-Source On-state Resistance
—
Diode Forward Voltage
Diode Forward Current
*AC
Switching
I
SD
= 0.5A ,
V
GS
=0V
T
A
= 25°C
—
I
S
—
—
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
1
0.16
0.13
2
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
DS
= 10V, I
D
= 0.5A,
V
GS
= 4.5V
V
DD
= 10V, I
D
= 0.4A,
14
t
d( off )
V
GS
= 4.5V, R
GEN
= 1
16
t
f
11
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
—
—
—
43
14
8
—
—
—
pF
pF
pF
V
DS
= 10V,V
GS
=0V, f=1.0MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction to a
mbient thermal resistance rating.
D: Pulse Test
：
Pulse Wide
≤
300
μ
s
，
Duty Cycle
≤
2%.
2
TW1504ESG
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
3
