TWGMC-TW1527Sl
| Part # | TWGMC-TW1527Sl |
Download  | TWGMC-TW1527Sl |
TW1527SI
P-Channel Enhancement Mode Field Effect Transistor
Features
General Description
V
DS
= -30V,
•
Load Switch
•
PWM
I
D
= -4A
R
DS(ON)
@V
GS
= -10V, TYP 46
mΩ
R
DS(ON)
@V
GS
= -4.5V, TYP 50
mΩ
R
DS(ON)
@V
GS
= -2.5V, TYP 63
mΩ
Pin Configurations
SOT-23
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
Parameter Symbol
Ratings
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GSS
±
12
-4
V
T
A
=25°C
T
A
=70°C
Drain Current (Continuous) *AC
I
D
A
-3.2
Drain Current (Pulse)
*B
Power Dissipation
I
DM
P
D
-15
A
T
A
=25°C
1.25
-55~150
W
℃
Operating Temperature/ Storage Temperature
T
J
/T
STG
Thermal Resistance Ratings
Parameter
Symbol
Typical
80
Maximum
Unit
Maximum Junction-to-Ambient
t ≤
5s
100
℃
/W
R
thJA
1
TW1527SI
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
= -250
μ
A
V
DS
= -30V, V
GS
= 0V
V
GS
= V
DS
, I
DS
= -250
μ
A
V
GS
=
12V
, V
DS
= 0V
V
GS
= -10V, I
D
= -4A
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -2.5V, I
D
= -1A
-30
—
—
—
—
-1
V
μ
A
V
-0.5
—
-0.9
—
-1.5
100
58
Gate Leakage Current
nA
mΩ
mΩ
mΩ
V
R
DS(on)
R
DS(on)
R
DS(on)
V
SD
—
46
50
63
—
—
72
Drain-Source On-state Resistance
—
86
Diode Forward Voltage
Diode Forward Current
Switching
I
SD
= -1A , V
GS
= 0V
T
A
= 25°C
—
-1.2
-2
I
S
—
—
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
9
1
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
GS
= -4.5V, V
DS
= -15V,
I
D
= -4A
3
9
3
V
DD
= -15V, R
G
= 6
Ω
t
d( off )
I
D
= -4A, V
GS
= -10V
66
16
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
—
—
—
945
120
80
—
—
—
pF
pF
pF
V
GS
=0V,V
DS
= -15V,f= 1.0MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s j
unction to ambient thermal resistance rating.
D: Pulse Test
：
Pulse Width
≤
300us
，
Duty Cycle
≤
2%.
2
TW1527SI
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
3
