TWGMC-TW4614SQ-X
| Part # | TWGMC-TW4614SQ-X |
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TW4614SQ-X
60V Complementary Enhancement Mode Power MOSFET
Features
General Description
•
used in inverter
N-channel
V
DS
= 60V,
P-channel
V
DS
= -60 V
•
other applications
I
D
= 4.4A
I
D
= -4.2A
R
DS(ON)
R
DS(ON)
V
GS
= 10V, TYP 37
mΩ
V
GS
= 4.5V, TYP 43
mΩ
V
GS
= -10V, TYP 53
mΩ
V
GS
= -4.5V, TYP 60
mΩ
Pin Configurations
SOP8
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
V
DSS
N-Ratings
60
P-Ratings
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-60
±
20
-4.2
-3.4
-17
V
GSS
±
20
4.4
V
T
A
=25°C
T
A
=70°C
Drain Current (Continuous) *AC
I
D
A
3.5
Drain Current (Pulse)
*B
Power Dissipation
I
DM
P
D
21
A
T
A
=25°C
2
W
℃
Operating Temperature/ Storage Temperature
T
J
/T
STG
-55~150
-55~150
Thermal Resistance Ratings
Parameter
Symbol
R
thJA
R
thJL
Typ
Maximum
62.5
Unit
N-channel
t
≤
10s
Maximum Junction-to-Ambient
Maximum Junction-to
Lead
48
35
°C/W
Steady State
60
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to
Lead
Symbol
R
thJA
R
thJL
Typ
48
Maximum
62.5
Unit
P-channel
t
≤
10s
°C/W
Steady State
35
40
1
TW4614SQ-X
N-channel
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 48V, V
GS
= 0V
V
GS
= V
DS
, I
DS
= 250
μ
A
V
GS
=
20V
, V
DS
=0V
V
GS
= 10V, I
D
= 5.3A
60
—
1
—
—
—
1
V
μA
V
1.6
—
3
Gate Leakage Current
—
—
—
—
—
—
nA
mΩ
mΩ
S
100
48
37
43
27
—
R
DS(on)
R
DS(on)
g
FS
Drain-Source On-state Resistance
V
GS
= 4.5V, I
D
= 4.7A
56
—
Forward Transconductance
Diode Forward Voltage
Diode Forward Current
Switching
V
DS
= 5V,
I
D
= 6.3A
I
SD
= 1A ,
V
GS
=0V
T
A
=25°C
V
SD
1.2
4.4
V
I
S
—
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
24.2
6
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=30V, I
D
=6.3A
14.4
7.6
5
V
GS
=10V, V
DS
=30V, R
L
=4.7
,
R
GEN
=3
t
d( off )
28.9
5.5
t
f
Input Capacitance
C
iss
C
oss
C
rss
—
—
—
1920
155
—
—
—
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=30V, f=1MHz
116
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction t
o ambient thermal resistance rating.
2
TW4614SQ-X
P-channel
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
= -250
μ
A
V
DS
= -48V, V
GS
= 0V
V
GS
= V
DS
, I
DS
= -250
μ
A
V
GS
=
20V
, V
DS
=0V
V
GS
= -10V, I
D
= -5A
-60
—
—
—
—
-1
V
μA
V
-1
—
-1.6
—
-3
Gate Leakage Current
nA
mΩ
mΩ
S
100
-65
—
-53
-60
18
—
R
DS(on)
R
DS(on)
g
FS
Drain-Source On-state Resistance
V
GS
= -4.5V, I
D
= -3A
—
-80
—
Forward Transconductance
Diode Forward Voltage
Diode Forward Current
Switching
V
DS
= -5V,
I
D
= -4.9A
I
SD
= -1A ,
V
GS
=0V
T
A
=25°C
—
V
SD
—
-1.2
-4.2
V
I
S
—
—
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
22.8
5.8
9.6
9.8
6.1
44
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-30V, I
D
=-4.9A
V
GS
=-10V, V
DS
=-30V,
t
d( off )
R
L
=6.2
,R
GEN
=3
t
f
12.7
Input Capacitance
C
iss
C
oss
C
rss
—
—
—
2417
179
—
—
—
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-30V, f=1MHz
120
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
3
TW4614SQ-X
N-channel
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
4
TW4614SQ-X
P-channel
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
6
