TWGMC-TWE3139k

T

M

W

M

E

A

B

S

3

O

T

I

1

2

3

3

3

9

4

9

0

0

0

K

5

4

0  

Feature  

Application  









Surface Mount Package  







Load/Power Switching  

Interfacing, Logic Switching  

P-Channel Switch with Low RDS(on)  

Operated at Low Logic Level Gate Drive  

ESD Protected  

Battery Management for Ultra Small Portable  

Electronics  

Circuit diagram  

Package  

:TP  

SOT-523  

Absolute maximum ratings (Ta=25

℃

unless otherwise noted)  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

V

GS  

I

D  

Value  

-20  

Unit  

V

Gate-Source Voltage  

±12  

V

A

Continuous Drain Current  

Pulsed Drain Current  

-0.8  

A

I

DM  

-1.2  

Power Dissipation  

P

D  

0.15  

W

Thermal Resistance from Junction to Ambient  

Junction

T

e

mperature  

R

θJA  

T

J  

833  

℃

/W  

℃

150  

Storage

T

e

mperature  

T

STG  

-55~ +150  

℃

1

T

M

W

M

E

A

B

S

3

O

T

I

1

2

3

3

3

9

4

9

0

0

0

K

5

4

0  

Electrical characteristics (T

A

=25

o

C, unless otherwise noted)  

Parameter  

Symbol  

Test Condition  

Min.  

Typ. Max.  

Unit  

Static Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate threshold voltage  

V

(BR)DSS  

I

DSS  

V

-20  

V

µA  

µA  

V

V

DS

=-16V,V

GS

= 0V  

-1  

±10  

-1  

V

I

GSS  

V

GS(th)  

V

DS

=V

GS

, I

D

=-250µA  

V

GS

= -4.5V, I

D

= -0.8A  

V

GS

= -2.5V, I

D

= -0.6A  

V

GS

= -1.8V, I

D

= -0.3A  

-0.35 -0.65  

290  

380  

555  

375  

495  

Drain-source on-resistance

1)  

R

DS(on)  

mΩ  

Dynamic characteristics

2)  

Input Capacitance  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

113  

15  

Output Capacitance  

V

DS

=-16V,V

GS

=0V,f =1MHz  

pF  

ns  

V

Reverse Transfer Capacitance  

Turn-on delay time  

9

9

Turn-on rise time  

5.7  

32.6  

20.3  

V

DS

=-10V,

I

D

=-200mA,  

V

GS

=-4.5V,R

G

=10Ω  

Turn-off delay time  

t

d(off)  

t

f  

Turn-off fall time  

Source-Drain Diode characteristics  

Diode Forward voltage  

Notes:  

V

SD  

V

GS

=0V, I

S

=-0.5 A  

-1.2  

1) Pulse

 

T

est: Pulse Width < 300µs, Duty Cycle ≤2%.  

2) Guaranteed

 

by design, not subject to production testing.  

2

T

M

W

M

E

A

B

S

3

O

T

I

1

2

3

3

3

9

4

9

0

0

0

K

5

4

0  

Typical Characteristics  

3

T

M

W

M

E

A

B

S

3

O

T

I

1

2

3

3

3

9

4

9

0

0

0

K

5

4

0  

SOT 523 Package Information  

Dimensions In Millimeters  

Symbol  

Min  

Max  

A

A1  

A2  

b1  

b2  

C

D

E

E1  

e

e1  

L

0.700  

0.000  

0.700  

0.150  

0.250  

0.100  

1.500  

0.700  

1.450  

0.900  

0.100  

0.800  

0.250  

0.350  

0.200  

1.700  

0.900  

1.750  

0.500 TYP  

0.400 REF  

0.900  

1.100  

L1  

θ

0.260  

0°  

0.460  

8°  

4