TWGMC-TWS6428FJ
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TWS6428FJ
N-Channel Enhancement Mode Power MOSFET
Features
General Description
V
DS
= 30V,
•
DC/DC conversion
•
Battery protection .
•
Load switching
I
D
= 49A
R
DS(ON)
@V
GS
= 10V, Max 7
mΩ
R
DS(ON)
@V
GS
= 4.5V, Max 10.8
mΩ
•
DC/AC inverters
Pin Configurations
DFN5*6-8L
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
V
DSS
Ratings
Unit
V
Drain-Source Voltage
Gate-Source Voltage
30
±
20
46.5
37.2
100
V
GSS
V
T
C
=25°C
T
C
=70°C
Drain Current (Continuous) *AC
I
D
A
Drain Current (Pulse)
*B
Power Dissipation
I
DM
P
D
A
T
C
=25°C
25
W
°C
Operating Temperature/ Storage Temperature
T
J
/T
STG
-55~150
Thermal Resistance Ratings
Parameter
Symbol
R
thJA
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t ≤ 10 s
30
37
°C/W
Maximum Junction-to-Case (Drain)
Steady State
4
5
R
thJC
1
TWS6428FJ
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
=
250μA
V
DS
= 30 V, V
GS
= 0V
V
GS
= V
DS
, I
DS
=
250μA
V
GS
=
20V
, V
DS
=0V
V
GS
= 10V, I
D
= 20A
30
—
1
—
—
—
—
—
—
—
—
—
1
V
μA
V
2.5
100
7
Gate Leakage Current
—
—
—
—
—
nA
mΩ
mΩ
V
R
DS(on)
R
DS(on)
V
SD
Drain-Source On-state Resistance
V
GS
= 4.5V, I
D
= 20A
10.8
1.2
35
Diode Forward Voltage
Diode Forward Current
*AC
Switching
I
SD
= 1A ,
V
GS
=0V
T
C
=25°C
I
S
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
16.8
2.1
2.8
7
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
GS
=10V, V
DS
=15V, I
D
=10A
28
14
8
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, Rg = 1
Ω
t
d( off )
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
—
—
—
947
157
10
—
—
—
pF
pF
pF
V
DS
=15V,V
GS
=0V, f=1.0MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction
to ambient thermal resistance rating.
2
TWS6428FJ
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
3
