TWGMC-TWS6604FL
| Part # | TWGMC-TWS6604FL |
Download  | TWGMC-TWS6604FL |
TWS6604FL
N-Channel Enhancement Mode Power MOSFET
⚫
Features
⚫
General Description
V
DS
= 65V,
• load switch
I
D
= 54A
•
power supply
R
DS(ON)
@V
GS
= 10V, TYP 7
mΩ
R
DS(ON)
@V
GS
= 4.5V, TYP 10.5
mΩ
•
synchronous rectifier
⚫
Pin Configurations
⚫
Absolute Maximum Ratings
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
V
DSS
Ratings
Unit
V
Drain-Source Voltage
Gate-Source Voltage
65
±
20
54
V
GSS
V
T
C
=25°C
T
C
=70°C
Drain Current (Continuous) *AC
I
D
A
43
Drain Current (Pulse)
*B
I
DM
P
D
216
A
Power Dissipation
T
C
=25°C
42
W
℃
Operating Temperature/ Storage Temperature
T
J
/T
STG
-55~150
⚫
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Case (Drain)
Symbol
Maximum
Unit
Steady State
3
R
thJC
°C/W
1
TWS6604FL
⚫
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
*D
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
t
Gate Threshold Voltage
V
(BR)DSS
I
DSS
V
GS(TH)
I
GSS
V
GS
= 0V, I
D
=
250μA
V
DS
= 60V, V
GS
= 0V
V
GS
= V
DS
, I
DS
=
250μA
V
GS
=
20V
, V
DS
= 0V
V
GS
= 10V, I
D
= 20A
65
—
1
—
—
—
1
V
μA
V
—
3
Gate Leakage Current
—
—
—
—
—
—
nA
mΩ
mΩ
V
100
9
7
R
DS(on)
R
DS(on)
V
SD
Drain-Source On-state Resistance
V
GS
= 4.5V, I
D
=10A
I
SD
= 1A ,
V
GS
= 0V
T
C
=25°C
10.5
—
14
1.2
35
Diode Forward Voltage
Diode Forward Current *AB
Switching
I
S
—
A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-Off Fall Time
Dynamic
Q
g
Q
gs
Q
gd
t
d ( on )
t
r
—
—
—
—
—
—
—
27
6.4
6.3
8.6
23.5
21
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
V
GS
=30V,V
DS
=10V,I
DS
=12 A
V
DS
=30
V
,
V
GEN
=10
V
,
R
G
=4.5
Ω
,
R
L
=2.5
Ω
,I
DS
=12 A
t
d( off )
t
f
16
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
—
—
—
1364
602
35
—
—
—
pF
pF
pF
V
DS
=30V,V
GS
=0V, f=1.0MHz
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
D: Pulse Test
：
Pulse Wide
≤
300
μ
s
，
Duty Cycle
≤
2%.
2
TWS6604FL
⚫
Typical Performance Characteristics
（
(TJ = 25 °C, unless otherwise noted)
）
3
