UMW-Youtai-Semiconductor-Co—Ltd–12N10
| Part # | UMW-Youtai-Semiconductor-Co—Ltd–12N10 |
Download  | UMW-Youtai-Semiconductor-Co—Ltd–12N10 |
R
UMW
1
2
N10
N-Channel 100 V (D-S) MOSFET
D
V
DS
(V)
R
DS(on)
(
)
I
D
(A)
100
0.
1
14
at
V
GS
= 10 V
1
5
G
S
APPLICATIONS
N-Channel MOSFET
•
Primary Side Switch
ABSOLUTE MAXIMUM RATINGS
Parameter
(T =
25 °C, unless otherwise noted)
A
Symbol
Limit
100
± 20
1
5
Unit
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
b
I
D
T
C
= 125 °C
13
I
DM
I
S
Pulsed Drain Current
4
0
A
Continuous Source Current (Diode Conduction)
Avalanche Current
3
I
AS
3
E
AS
Single Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
18
mJ
W
9
6
b
3
a
P
D
Maximum Power Dissipation
T
A
= 25 °C
T
J
, T
stg
Operating Junction and Storage
T
e
mperature Range
– 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
R
thJA
Typical
Maximum
Unit
t
10 s
15
40
18
50
Junction-to-Ambient
a
Steady State
°C/W
R
thJC
Junction-to-Case (Drain)
0.85
1.1
Notes:
a. Surface mounted on 1″ x 1″ FR4 board.
b. See SOA curve for voltage derating.
1
UTD Semiconductor Co.,Limited
R
UMW
1
2
N10
N-Channel 100 V (D-S) MOSFET
SPECIFICATIONS
(T =
25 °C, unless otherwise noted)
J
Typ.
a
Parameter
Symbol
Test Conditions
Min.
Max.
Unit
Static
V
DS
V
GS(th)
I
GSS
V
GS
= 0
V
,
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
100
1.0
V
2.5
± 100
1
V
DS
= 0
V
,
V
GS
= ± 20 V
nA
V
DS
= 100
V
,
V
GS
= 0 V
I
DSS
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 125 °C
Zero Gate Voltage Drain Current
On-State Drain Current
b
50
µA
A
V
DS
= 100
V
,
V
GS
= 0
V
,
T
J
= 175 °C
V
DS
=
5
V
,
V
GS
= 10 V
250
I
D(on)
40
V
GS
= 10 V, I
D
=
3
A
114
120
V
GS
= 10 V, I
D
=
3
A, T
J
= 125 °C
V
GS
= 10 V, I
D
=
3
A, T
J
= 175 °C
V
GS
= 4.5 V I
D
=
3
A
Drain-Source On-State Resistance
b
m
Ω
R
DS(on)
140
120
35
Forward
T
r
ansconductance
b
Dynamic
a
g
fs
V
DS
= 15 V, I
D
=
3
A
S
C
iss
C
oss
C
rss
Q
g
Input Capacitance
Output Capacitance
Reverse
T
r
ansfer Capacitance
T
o
tal Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
950
120
60
24
8
V
GS
= 0
V
,
V
DS
= 25
V
, F = 1
M
Hz
pF
41
Q
gs
Q
gd
R
g
V
DS
= 50 V,
V
GS
= 10 V, I
D
=
3
A
nC
12
0.5
2.9
25
75
45
90
T
u
rn-On Delay Time
c
Rise Time
c
T
u
rn-Off Delay Time
c
Fall Time
c
t
d(on)
t
r
t
d(off)
t
f
15
50
30
60
V
DD
= 50 V,
R
L
= 5.2
Ω
I
D
≅
3
A, V
GEN
= 10 V, R
g
= 2.5
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
Pulsed Current
5
A
V
Diode Forward Voltage
b
I
F
=
3
A, V
GS
= 0 V
0.9
1.5
250
I
F
=
3
A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
180
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
2
UTD Semiconductor Co.,Limited
R
UMW
1
2
N10
N-Channel 100 V (D-S) MOSFET
(25 °C, unless otherwise noted)
TYPICAL CHARA
C
T
ERI STICS
8
6
4
2
40
V
GS
= 10 V thru 5 V
4 V
30
20
10
0
T
= 125 °C
25 °C
C
3 V
2 V
– 55 °C
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
– Gate-to-So
u
rce
V
oltage (
V
)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
70
60
50
40
30
20
10
0
0.
4
0.
3
0.
2
0.
1
0.0
T
= – 55 °C
C
25 °C
125 °C
V
GS
= 5 V
V
GS
= 10 V
0
10
20
– Drain C
u
rrent (A)
30
40
0
10
20
30
40
I
D
I
D
– Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1500
1200
900
600
300
0
20
16
12
8
V
= 100 V
= 19 A
DS
I
D
C
iss
4
C
rss
C
oss
0
0
20
40
60
80
100
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
–
T
o
tal Gate Charge (nC)
g
Capacitance
Gate Charge
3
UTD Semiconductor Co.,Limited
R
UMW
1
2
N10
N-Channel 100 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.3
100
V
= 10
V
= 5 A
GS
I
0
.
2
T
= 150 °C
J
0.15
0.1
10
T
= 25 °C
J
0.
0
5
0.0
1
– 50
– 25
0
25
50
75 100
125 150 175
0
0.3
0.6
0.9
1.2
V
SD
– So
u
rce-to-Drain
V
oltage (
V
)
T
– J
u
nction
T
e
mperat
u
re (°C)
J
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
10
7
6
5
4
3
10
µ
s
Limited
b
y R
*
DS(on)
100
µ
s
5
1 ms
10 ms
1
100 ms
1 s, DC
T
= 25 °C
C
Single P
u
lse
0
0.1
0.1
0
25
50
75
100
125
150
175
1
10
100
1000
T
– Case
T
e
mperat
u
re (°C)
C
V
DS
– Drain-to-Source Voltage (V)
Maximum Avalanche Drain Current
vs. Case Temperature
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–
2
10
–
1
10
–
4
–
3
10
1
10
30
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
4
UTD Semiconductor Co.,Limited
R
UMW
1
2
N10
N-Channel 100 V (D-S) MOSFET
Package Mechanical Data
TO-252
E
A
B2
Dimensions
C2
V 1
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
2.10
0
Max.
2.50
0.10
0.86
5.48
0.60
0.58
6.30
Min.
0.083
0
Max.
0.098
0.004
0.034
0.216
0.024
0.023
0.248
A
A2
B
0.66
5.18
0.40
0.44
5.90
0.026
0.202
0.016
0.017
0.232
B2
C
C2
D
C
B
G
5.30REF
0.209REF
D1
E
DETAIL A
6.40
4.63
4.47
9.50
1.09
1.35
6.80
0.252
0.182
0.176
0.374
0.043
0.053
0.268
V1
E1
G
4.67
10.70
1.21
0.184
0.421
0.048
0.065
V 2
H
L
V1
1.65
L2
V1
V2
E1
L2
7°
7°
DETAIL A
0°
6°
0°
6°
Ordering information
Order code
Package
Baseqty
2500
Delivery mode
Tape and reel
UMW 12N10
TO-252
5
UTD Semiconductor Co.,Limited
