UMW-Youtai-Semiconductor-Co—Ltd–AO3401A
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R
UMW
UMW AO3401A
P-Channel Enhancement
MOSFET
SMD Type
SOT
–
23
●
V
DS (V)
=-30V
●
I
D
=-4.2 A (V
GS
=-10V)
●
R
DS(ON)
＜
50m
Ω
(V
GS
=-10V)
●
R
DS(ON)
＜
65m
Ω
(V
GS
=-4.5V)
●
R
DS(ON)
＜
120m
Ω
(V
GS
=-2.5V)
1. GATE
2. SOURCE
3. DRAIN
D
G
S
■
Absolute Maximum Ratings Ta = 25
℃
Parameter
Drain-Source Voltage
Symbol
Rating
-30
Unit
V
V
DS
GS
Gate-Source Voltage
V
±
12
-4.2
-3.5
-30
Continuous Drain Current
Ta = 25
℃
Ta = 70
℃
I
D
A
W
Pulsed Drain Current
Power Dissipation
I
DM
1.4
Ta = 25
℃
Ta = 70
℃
P
D
1
90
Thermal Resistance.Junction- to-Ambient
t
≤
10s
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
R
thJA
thJC
℃
/W
℃
125
R
60
T
J
150
Junction and Storage Temperature Range
T
stg
-55 to 150
1
友台半导体有限公司
R
UMW
UMW AO3401A
P-Channel Enhancement
MOSFET
SMD Type
■
Electrical Characteristics Ta = 25
℃
Parameter
Symbol
Test Conditions
D
=-250
μ
A, V
GS
=0V
Min
-30
Typ
Max
-1
Unit
V
Drain-Source Breakdown Voltage
V
DSS
I
V
V
DS
=-24V, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
μ
A
-5
DS
=-24V, V
GS
=0V, T
J
=55
℃
Gate-Body leakage current
Gate Threshold Voltage
I
GSS
nA
V
V
DS
=0V, V
GS
=
±
12V
±
100
V
GS(th)
-0.4
-1.3
50
V
V
DS
=V
GS
I
D
=-250
μ
A
GS
=-10V, I
D
=-4.2A
Static Drain-Source On-Resistance
R
DS(O
n
)
m
Ω
V
V
V
V
GS
=-4.5V, I
GS
=-2.5V, I
D
=-4A
65
D
=-1A
120
On state drain current
I
D(ON)
FS
iss
oss
GS
=-4.5V, V
DS
=-5V
DS
=-5V, I
=-5A
-25
7
A
S
Forward Transconductance
Input Capacitance
g
D
11
954
115
77
C
V
V
V
GS
=0V, V
DS
=-15V, f=1MHz
GS
=0V, V
DS
=0V, f=1MHz
pF
Output Capacitance
C
Reverse Transfer Capacitance
Gate resistance
C
rss
R
g
6
Ω
Total Gate Charge
Q
g
9.4
2
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
nC
Gate Source Charge
Q
gs
gd
Gate Drain Charge
Q
3
Turn-On DelayTime
t
d(on)
6.3
3.2
38.3
12
Turn-On Rise Time
t
r
V
GS
=-10V, V
DS
=-15V, R
L
=3.6
Ω
,R
GEN
=6
Ω
ns
Turn-Off DelayTime
t
d(off)
Turn-Off Fall Time
t
f
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
rr
20.2
11.2
I
I
F
F
=-4A, d
I
/d
t
=100A/
μ
s
Q
nC
A
=5A, d /d
I
t
=100A/
μ
s
I
S
-2.2
-1
V
SD
I
S
=-1A,V
GS
=0V
-0.75
V
2
友台半导体有限公司
R
UMW
UMW AO3401A
P-Channel Enhancement
MOSFET
SMD Type
■
Typical Characterisitics
10
V
DS
=-5V
-4.5V
20.00
8
-3V
6
15.00
10.00
5.00
-2.5V
125°C
4
25°C
V
GS
=-2V
2
0.00
0
0.00
1.00
2.00
3.00
4.00
5.00
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
120
100
80
1.8
1.6
1.4
1.2
1
I
D
=-3.5A, V
GS
=-4.5V
I
D
=-3.5A, V
GS
=-10V
V
GS
=-2.5V
V
GS
=-4.5V
V
GS
=-2.5V
I
D
=-1A
60
40
V
GS
=-10V
20
0.8
0.00
2.00
4.00
-I
D
(A)
6.00
8.00
10.00
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
170
150
130
110
90
I
D
=-2A
125°C
125°C
25°C
70
50
25°C
30
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
-V
SD
(Volts)
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
3
友台半导体有限公司
R
UMW
UMW AO3401A
P-Channel Enhancement
MOSFET
SMD Type
■
Typical Characterisitics
1400
1200
1000
V
DS
=-15V
I
D
=-4A
4
C
iss
3
2
1
0
800
600
400
C
oss
C
rss
200
0
0
2
4
6
8
10
12
0
5
10
15
-V
DS
(Volts)
20
25
30
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
T
J(Max)
=150°C
40
T
J(Max)
=150°C
T
A
=25°C
T
A
=25°C
1
0
µ
s
30
20
10
0
R
DS(ON)
10
0
µ
s
limited
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
.
Operating Area (Note E)
10
1
D=T
o
n
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,P
K
=
T
A
+
P
DM
.
Z
θ
J
A
.R
θ
JA
R
θ
J
A
=90°C/W
P
D
0.1
T
on
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
友台半导体有限公司
R
UMW
UMW AO3401A
P-Channel Enhancement
MOSFET
SMD Type
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
X
1P
V
U
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
Tape and
reel
SOT-23
UMW AO3401A
3000
5
友台半导体有限公司
