UMW-Youtai-Semiconductor-Co—Ltd–AO3409A
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R
UMW
UMW AO3409A
SOT
–
23
V
DS
(V) = -30V
I
D
= -2.6 A (V
GS
= -10V)
R
DS(ON)
< 130m
(V
GS
= -10V)
R
DS(ON)
< 200m
(V
GS
= -4.5V)
●
Pb
−
Free Package May be Available. The G
−
Suffix Denotes a
Pb
−
Free Lead Finish
1. GATE
2. SOURCE
3. DRAIN
D
S
G
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
V
DS
Rating
-30
Unit
V
Gate-Source Voltage
V
GS
V
20
-2.6
-2.2
-20
Continuous Drain Current
T
A
=25
T
A
=70
I
D
A
Pulsed Drain Current
Power Dissipation
I
DM
P
D
1.4
T
A
=25
T
A
=70
W
1
Themal Resistance. Junction-to-Ambient
Themal Resistance. Junction-to-Case
Junction and Storage Temperature Range
R
thJA
R
thJC
125
/W
/W
80
T
J
, T
STG
-55 to 150
1
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UMW
UMW AO3409A
Electrical Characteristics Ta = 25
Parameter
Symbol
V
DSS
Testconditions
I
D
=250 A,
V
GS
=0V
Min
-30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
V
DS
=-24V, V
GS
=0V
-1
-5
Zero Gate Voltage Drain Current
I
DSS
A
V
DS
=-24V, V
GS
=0V ,TJ=55
V
DS
=0V, V
GS
= 20V
Gate-Body leakage current
Gate Threshold Voltage
I
GSS
nA
V
100
-3
V
GS(th)
-1
-1.9
97
V
DS
=V
GS
I
D
=-250
A
V
GS
=-10V, I
D
=-2.6A
V
GS
=-10V, I
D
=-2.6A
V
GS
=-4.5V, I
D
=-2A
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-5A
130
150
200
m
Static Drain-Source On-Resistance
r
DS(ON)
135
166
T
J
=125
m
On state drain current
I
D(ON)
g
fs
-5
3
A
Forward Transconductance
Input Capacitance
3.8
302
50.3
37.8
12
S
C
iss
C
oss
C
rss
R
g
370
pF
pF
pF
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
18
9
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
6.8
2.4
1.6
0.95
7.5
3.2
17
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A
Q
g
V
GS
=-4.5V, V
DS
=-15V, I
D
=-2.6A
Q
gs
Q
gd
t
D(on)
t
r
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=-10V, V
DS
=-15V, R
L
=5.8 ,R
GEN
=3
Turn-Off DelayTime
t
D(off)
t
f
Turn-Off Fall Time
6.8
16.8
10
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
t
rr
22
I
F
=-2.6A, d
I
/d
t
=100A/
I
F
=-2.6A, d
I
/d
t
=100A/
s
s
Q
rr
I
S
-2
-1
V
SD
I
S
=-1A,V
GS
=0V
-0.82
V
* Repetitive rating, pulse width limited by junction temperature.
2
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UMW
UMW AO3409A
■
Typical Characterisitics
10
8
20
-8V
V
DS
=-5V
-10V
15
10
5
-6V
25°C
6
–
-5V
125°C
V
GS
=-4.5V
4
-4V
2
-3.5V
-3.0V
4
0
0
0
1
2
3
5
1
2
3
4
5
6
-V
GS
(Volts)
-V
DS
(Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
250
200
150
100
50
1.6
1.4
1.2
1
V
GS
=-10V
V
GS
=-4.5V
V
GS
=-4.5V
I
D
=-2A
V
GS
=-10V
0.8
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
300
250
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
I
D
=-2A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3
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R
UMW
UMW AO3409A
■
Typical Characterisitics
500
400
300
200
100
0
10
V
DS
=-15V
9
I
D
=-2.6A
8
7
6
5
4
3
2
1
0
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
-Q
g
(nC)
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
T
J(Max)
=150°C
T
A
=25°C
20
15
10
5
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
100
µ
s
1ms
10
µ
s
0.1s
10ms
1s
10s
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=90°C/W
P
D
0.1
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
友台半导体有限公司
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UMW
UMW AO3409A
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
A96X
U
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
UMW AO340
9
A
Tape and reel
SOT-23
3000
5
友台半导体有限公司
