UMW-Youtai-Semiconductor-Co—Ltd–AO3413A
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R
UMW
UMW AO3413A
20V P-Channel MOSFET
V
DS
= -20V
SOT
–
23
I
D
(V
GS
= -4.5V)
= -3A
R
DS(ON)
< 66m
Ω
(V
G
S
=- 4.5V)
R
DS(ON)
< 80m
Ω
(V
GS
= -2.5V)
1. GATE
2. SOURCE
3. DRAIN
D
G
S
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Maximum
Units
Symbol
V
DS
V
GS
Drain-Source Voltage
Gate-Source Voltage
-20
±8
V
V
T
A
=25
°
C
T
A
=70
°
C
-3
Continuous Drain
Current
A
I
D
-2.4
A
Pulsed Drain Current
B
I
DM
P
D
-15
T
A
=25
°
C
T
A
=70
°
C
1.4
W
°C
Power Dissipation
A
0.9
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
100
63
125
80
R
θ
JL
1
友台半导体有限公司
R
UMW
UMW AO3413A
20V P-Channel MOSFET
J
Parameter
Conditions
Min
Typ
Max Units
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-20
V
V
DS
=-20V, V
GS
=0V
-1
µ
A
-5
I
DSS
Zero Gate Voltage Drain Current
T
J
=55
°
C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250
µ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-2.6A
V
DS
=-5V, I
D
=-3A
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1
nA
V
V
GS(th)
I
D(ON)
-0.4
-15
-0.65
A
m
Ω
66
80
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
12
I
S
=-1A,V
GS
=0V
-0.7
-1
V
Maximum Body-Diode Continuous Current
-1.4
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
560
80
745
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
V
GS
=0V, V
DS
=0V, f=1MHz
15
23
11
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3A
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.3
Ω
,
R
GEN
=6
Ω
t
D(off)
t
f
53
56
t
rr
I
F
=-3A, dI/dt=100A/
µ
s
I
F
=-3A, dI/dt=100A/
µ
s
37
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Q
rr
nC
27
A: The value of R
θ
JA
is measured with the device mounted on 1 in
2
FR-4 board with 2oz. copper, in a still air environment with T
A
=25
°
C. The
value in any
given application depends on the user’s specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300
µ
s pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The SOA
curve provides a single pulse rating.
2
友台半导体有限公司
R
UMW
UMW AO3413A
20V P-Channel MOSFET
TYPICAL EL
ECTRICAL AND THERMAL CHARACTERISTICS
2
5
2
0
1
5
1
0
5
2
0
1
5
1
0
5
V
DS
=-5V
–
3
.
0
V
–
4
.
5
V
–
2
.
5
V
–
2
.
0
V
1
2
5
°
C
V
GS
=-1.5V
2
5
°
C
0
0
0
1
2
3
4
5
0
0
.
5
1
1
.
5
2
2
.
5
3
-V
GS
(Volts)
-V
DS
(Volts)
F
i
g
u
r
e
2
:
T
r
a
n
s
f
e
r
C
h
a
r
a
c
t
e
r
i
s
t
i
c
s
F
i
g
u
r
e
1
:
O
n
–
R
e
g
i
o
n
C
h
a
r
a
c
t
e
r
i
s
t
i
c
s
1
5
0
1
3
0
1
1
0
9
0
1
.
6
1
.
4
1
.
2
1
V
GS
=-2.5V
I
D
=
–
2
.
6
A
V
GS
=-1.8V
V
GS
=-4.5V
I
D
=
–
3
A
V
GS
=-1.8V
I
D
=
–
1
A
V
GS
=-2.5V
V
GS
=-4.5V
7
0
5
0
0
.
8
0
2
4
6
8
1
0
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
180
1E+02
1E+01
I
D
=-3A
160
140
120
100
80
1E+00
125
°
C
1E-01
1E-02
1E-03
1E-04
1E-05
125
°
C
25
°
C
60
25
°
C
40
0
2
4
6
8
-V
GS
(Volts)
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
Figure 5: On-Resistance vs. Gate-Source Voltage
3
友台半导体有限公司
R
UMW
UMW AO3413A
20V P-Channel MOSFET
TYPICAL EL
ECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1
4
0
0
V
DS
=-10V
I
D
=
–
3
A
1
2
0
0
1
0
0
0
8
0
0
6
0
0
4
0
0
2
0
0
0
C
iss
C
oss
C
rss
0
2
4
6
8
1
0
0
5
1
0
1
5
2
0
Q
g
(
n
C
)
-V
DS
(Volts)
F
i
g
u
r
e
7
:
G
a
t
e
–
C
h
a
r
g
e
C
h
a
r
a
c
t
e
r
i
s
t
i
c
s
F
i
g
u
r
e
8
:
C
a
p
a
c
i
t
a
n
c
e
C
h
a
r
a
c
t
e
r
i
s
t
i
c
s
1
0
0
.
0
0
1
0
.
0
0
1
.
0
0
1
0
0
0
T
J(Max)
=150
°
C
T
A
=
2
5
°
C
R
DS(ON)
l
i
m
i
t
e
d
1
0
µ
s
1
0
0
1
0
1
1
0
0
µ
s
1
m
s
1
0
m
s
0
.
1
s
1
s
T
J(Max)
=150
°
C
T
A
=
2
5
°
C
0
.
1
0
D
C
0
.
1
0
.
0
1
0
.
0
0
0
0
1
0
.
0
0
1
0
.
1
1
0
1
0
0
0
0
.
1
1
1
0
1
0
0
-V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=125
°
C/W
1
0.1
P
D
0.01
T
on
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4
友台半导体有限公司
R
UMW
UMW AO3413A
20V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
g
Qg
–
-10V
–
VDC
Q
g
s
Qgd
Qgd
+
Vds
DC
VDC
+
DUT
Vgs
Ig
Ch
a
r
r
g
e
e
Re
s
s
i
i
s
s
t
t
i
i
v
v
e
e
S
S
w
w
i
i
t
t
c
c
h
h
i
i
n
n
g
g
T
T
e
e
s
s
t
t
C
C
i
i
r
r
c
c
u
u
i
i
t
t
&
&
W
W
a
a
v
v
e
e
f
f
o
o
r
r
m
m
s
s
R
RL
V
Vds
t
o
o
t
o
o
ff
n
t
t
d
d
f
f
f)
t
t
d
(
(o
n
n
)
)
t
r
V
Vgs
–
–
9
90%
D
D
UT
V
V d
+
+
d
d
V
Vgs
V
VDC
R
Rg
V
Vgs
1
10%
V
Vds
D
i
o
d
e
R
e
c
o
v
e
r
y
T
e
s
t
C
i
r
c
u
i
t
&
W
a
v
e
f
o
r
m
s
Q
Q
r
=
–
– I
d
dt
r
r
V
d
s
+
D
DUT
Vgs
t
rr
Vds –
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Ig
5
友台半导体有限公司
R
UMW
UMW AO3413A
20V P-Channel MOSFET
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.950 T
Y
P
.
0.550 REF.
0.037 T
Y
P
.
0.022 REF.
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
Marking
ADRV
U
Ordering information
Deliver
y
m
ode
Package
Baseqty
Order code
UMW AO3413A
Tape and reel
SOT-23
3000
6
友台半导体有限公司
