UMW-Youtai-Semiconductor-Co—Ltd–AO3414A

R

UMW  

UMW AO3414A  

N-Channel Enhancement MOSFET  

V

DS (V)

= 20V  

SOT

–

23  

I

D

= 4.2A (V

GS

=4.5V)  

R

DS(ON)  

R

DS(ON)  

R

DS(ON)  

26m (V

GS

= 4.5V)  

36m (V

GS

= 2.5V)  

57m (V

GS

= 1.8V)  

1. GATE  

2. SOURCE  

3. DRAIN  

Absolute Maximum Ratings Ta = 25  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Rating  

Unit  

V

20  

8

Gate-Source Voltage  

V

GS  

V

4.2  

Continuous Drain

 

T

A

=25  

I

D  

A

3.2  

Current *1  

T

A

=70  

Pulsed Drain Current *2  

I

DM  

P

D  

15  

1.4  

Power Dissipation *1

 

T

A

=25  

T

A

=70  

W

0.9  

Themal Resistance.Junction-to-Ambient *1  

Themal Resistance.Junction-to-Case  

Junction and Storage Temperature Range  

R

thJA  

R

thJC  

125  

80  

/W  

/W  

T

J

, T

STG  

-55 to 150  

*1The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz.  

Copper, in a still air environment with T

A

=25  

1

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R

UMW  

UMW AO3414A  

Electrical Characteristics Ta = 25  

Parameter  

Symbol  

V

DSS  

Testconditions  

I

D

=250uA , V

GS

=0V  

Min  

20  

Typ  

Max  

Unit  

V

Drain-Source Breakdown Voltage  

V

DS

=16V, V

GS

=0V  

1

5

Zero Gate Voltage Drain Current  

I

DSS  

A

V

DS

=16V, V

GS

=0V ,T

J

=55  

Gate-Body leakage current  

Gate Threshold Voltage  

I

GSS  

nA  

V

V

DS

=0V, V

GS

=

8V  

±

100  

1

V

GS(th)  

V

DS

=V

GS

I

D

=250uA  

V

GS

=4.5V, I

D

=4.2A  

V

GS

=2.5V, I

D

=3.7A  

V

GS

=1.8V, I

D

=3.2A  

V

GS

=4.5V, V

DS

=5V  

V

DS

=5V, I

D

=4.2A  

0.4  

15  

0.6  

23  

32  

48  

26  

36  

57  

Static Drain-Source On-Resistance  

R

DS(ON)  

m

On state drain current  

Forward Transconductance  

Input Capacitance  

I

D(ON)  

g

FS  

C

iss  

C

oss  

C

rss  

R

g  

A

S

11  

436  

66  

pF  

pF  

pF  

V

GS

=0V, V

DS

=-10V, f=1MHz  

V

GS

=0V, V

DS

=0V, f=1MHz  

V

GS

=4.5V, V

DS

= =10V, I

D

=4.2A  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

44  

3

Total Gate Charge  

Q

g  

6.2  

1.6  

0.5  

5.5  

6.3  

40  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

ns  

nC  

A

Gate Source Charge  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Gate Drain Charge  

Turn-On DelayTime  

Turn-On Rise Time  

Ω

V

GS

=4.5V, V

DS

=10V, R

L

=2.7 ,R

GEN

=6  

Ω

Turn-Off DelayTime  

t

D(off)  

t

f  

Turn-Off FallTime  

12.7  

12.3  

3.5  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

Maximum Body-Diode Continuous Current  

Diode Forward Voltage  

t

rr  

I

F

=4A, d

I

/d

t

=100A/  

I

F

=4A, d

I

/d

t

=100A/  

s

s

Q

rr  

I

S  

2

1

V

SD  

I

S

=1A,V

GS

=0V  

0.76  

V

2

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R

UMW  

UMW AO3414A  

■

Typical Characterisitics  

10  

8

16  

8V  

4.5V  

V

DS

=5V  

12  

2V  

6

3V  

2.5V  

8

4

125°C  

4

0

V

GS

=1.5V  

2

25°C  

0

0

1

2

3

4

5

0

0.5  

1

1.5  

2

2.5  

V

V

Figure 2: Transfer Characteristics  

Fig 1: On-Region Characteristics  

100  

80  

60  

40  

20  

1.8  

V

GS

=2.5  

1.6  

1.4  

1.2  

1

V

GS

=1.8V  

V

GS

=1.8V  

I

D

=4.2A  

V

GS

=4.5V  

V

GS

=2.5V  

V

GS

=4.5V  

0.8  

0

4

8

12  

0

25  

50  

75  

100  

125  

150  

175  

I

D

(A)  

Temperature (°C)  

Figure 3: On-Resistance vs. Drain Current and  

Gate Voltage  

Figure 4: On-Resistance vs. Junction  

Temperature  

100  

90  

80  

70  

60  

50  

40  

30  

20  

1E+01  

1E+00  

1E-01  

1E-02  

1E-03  

1E-04  

1E-05  

I

D

=4.2A  

125°C  

125°C  

25°C  

25°C  

0.0  

0.2  

0.4  

V

SD

(Volts)  

Figure 6: Body-Diode Characteristics  

0.6  

0.8  

1.0  

0

2

4

6

8

V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

3

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R

UMW  

UMW AO3414A  

■

Typical Characterisitics  

800  

600  

400  

200  

0

5

V

DS

=10V  

4

I

D

=4.2A  

C

iss  

3

2

1

0

C

oss  

C

rss  

0

5

10  

15  

20  

0

2

4

6

8

V

Q

g

(nC)  

Figure 8: Capacitance Characteristics  

Figure 7: Gate-Charge Characteristics  

100.0  

10.0  

1.0  

20  

15  

10  

5

T

J(Max)

=150°C  

T

J(Max)

=150°C  

T

A

=25°C  

100

µ

s  

T

A

=25°C  

R

DS(ON)  

limited  

10

µ

s  

1ms  

0.1s  

10ms  

1s  

10s  

DC  

0

0.1  

0.001  

0.01  

0.1  

1

10  

100  

1000  

0.1  

1

10  

100  

Pulse Width (s)  

V

Figure 10: Single Pulse Power Rating Junction-to-  

Ambient (Note E)  

Figure 9: Maximum Forward Biased Safe  

Operating Area (Note E)  

.

10  

1

D=T

on

/T  

In descending order  

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA  

R

θ

JA

=90°C/W  

P

D  

0.1  

T

on  

T

Single Pulse  

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

Pulse Width (s)  

1

10  

100  

1000  

Figure 11: Normalized Maximum Transient Thermal Impedance  

4

友台半导体有限公司  

R

UMW  

UMW AO3414A  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

Max.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min.  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

Max.  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.950 T

Y

P

.  

0.550 REF.  

0.037 T

Y

P

.  

0.022 REF.  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8°  

Marking  

AETL  

U

Ordering information  

Deliver

y

m

ode  

Package  

Baseqty  

Order code  

UMW AO3414A  

Tape and reel  

SOT-23  

3000  

5

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