UMW-Youtai-Semiconductor-Co—Ltd–AO3415A

R

UMW  

UMW AO3415A  

SOT-23 Plastic-Encapsulate MOSFETS  

el 20-V(D-S) MOSFET  

SOT-23  

I

D  

V

(BR)DSS  

R

DS(on)

MAX  

@

–

4.5

V  

36  

Ω

m

-4

A  

V

–

2

0

 

@

–

2

.5

V  

60

m

Ω  

1. GATE  

2. SOURCE  

3. DRAIN  

APPLICATION  

Load switch and in PWM applicatopns  

FEATURE  

z

z

Excellent R

DS(ON)

, low gate charge,low gate voltages  

Equivalent Circuit  

D

G

S

Maximum ratings (T

a

=25

℃

unless otherwise noted)  

Value  

Parameter  

Symbol  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

I

D  

-20  

±8  

V

Continuous Drain Current (t

≤

10s)  

Maximum Power Dissipation (t

≤

10s)  

Thermal Resistance from Junction to Ambient  

Operating Junction Temperature  

Storage Temperature  

-4.0  

A

P

D  

0.35  

W

R

θ

JA  

T

J  

357  

℃

/W  

℃

℃

150  

T

STG  

-55 ~+150  

1

友台半导体有限公司  

R

UMW AO3415A  

SOT-23 Plastic-Encapsulate MOSFETS  

UMW  

T =25  

a

unless otherwise specified  

℃

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Units  

V

Drain-source breakdown voltage  

Gate threshold voltage  

V

(BR) DSS

 

V

GS

= 0V, I

D

=-250µA  

-20  

V

GS(th)  

V

DS

=V

GS

, I

D

=-250µA  

V

DS

=0V, V

GS

=±8V  

V

DS

=0V, V

GS

=±4.5V  

V

DS

=-16V, V

GS

=0V  

V

GS

=-4.5V, I

D

=-4A  

V

GS

=-2.5V,

I

D

=-4A  

V

DS

=-5V, I

D

=-4A  

I

S

=-1A,V

GS

=0V  

-0.3  

-0.56  

-1  

±10  

±1  

-1  

Gate-body leakage current  

I

GSS  

µA  

Zero gate voltage drain current  

I

DSS  

34  

43  

36  

60  

m

Ω

Drain-source on-state resistance(note1)  

Forward transconductance(note2)  

Body diode voltage(note2)  

Dynamic Parameters

(note3)  

Input capacitance  

R

DS(on)  

g

FS  

8

S

-1  

V

SD  

V

C

iss  

C

oss  

C

rss  

R

g  

1450  

205  

160  

6.5  

V

DS

=-10V,V

GS

=0V,f =1MHz  

V

DS

=0V,V

GS

=0V,f =1MHz  

pF  

Output capacitance  

Reverse transfer capacitance  

Gate resistance  

Ω

Switching Parameters  

Total gate charge  

Q

g  

Q

gs  

Q

gd  

t

d(on)  

t

r  

17.2  

1.3  

4.5  

9.5  

17  

V

DS

=-10V,V

GS

=-4.5V,I

D

=-4A  

nC  

ns  

Gate-Source charge  

Gate-drain charge  

Turn-on delay time (note3)  

Turn-on rise time(note3)  

Turn-off delay time(note3)  

V

DS

=-10V,

V

GS

=-4.5V  

R

GEN

=3

ꢀ

,

R

L

=2.5

ꢀ

,  

t

d(off)  

t

f  

94  

Turn-off fall time(note3)  

35  

Notes:  

1. Repetitive rating,pulse width limited by junction temperature.  

2. Pulse

T

e

st : Pulse width

≦

300µs, duty cycle

≦

2%.  

3. These parameters have no way to verify.  

2

友台半导体有限公司  

R

UMW  

UMW AO3415A  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

Max.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min.  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

Max.  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.950 T

Y

P

.  

0.550 REF.  

0.037 T

Y

P

.  

0.022 REF.  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8°  

Marking  

XFDX  

U

Ordering information  

Deliver

y

m

ode  

Package  

Baseqty  

Order code  

UMW AO3415A  

Tape and reel  

SOT-23  

3000  

3

友台半导体有限公司