UMW-Youtai-Semiconductor-Co—Ltd–AO3422A

R

UMW AO3422A  

N-Channel 60-V(D-S) MOSFET  

UMW  

DSS  

RDS(on)MAX  

ID  

105mΩ@10V  

125mΩ@4.5V  

V  

2.1A  

FEATURE  

※

TrenchFET Power MOSFET  

SOT

–

23  

APPLICATION  

※

Load Switch for Portable Devices  

t

※

DC/DC Conver er  

MARKING  

Equivalent Circuit  

1. GATE  

2. SOURCE  

3. DRAIN  

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter  

Symbol  

VDS  

VGS  

ID  

Value  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

60  

V

±20  

2.1  

Continuous Drain Current  

Pulsed Diode Curren  

10  

A

IDM  

IS  

Continuous Source-Drain Current(Diode Conduction)  

Power Dissipation  

0.85  

1.25  

125  

W

℃

/W  

℃

PD  

Thermal Resistance from Junction to Ambient (t≤5s)  

Operating Junction  

RθJA  

TJ  

150  

Storage Temperature  

-55~+150  

TSTG  

℃

1

友台半导体有限公司  

R

UMW AO3422A  

UMW  

MOSFET ELECTRICAL CHARACTERISTICS  

St

cal Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max Unit  

Static  

Drain-source breakdown voltage

 

V(BR)DSS

VGS = 0V, ID = 250µA  

60  

1

V

Gate-source threshold voltage  

Gate-source leakage  

VGS(th)

VDS =VGS, ID = 250µA  

2.5  

±100  

1

V

nA  

µA  

mΩ  

mΩ  

S

IGSS  

IDSS  

VDS =0V, VGS = ±20V  

VDS = 60V, VGS =0V  

VGS = 10V, ID = 3A  

VGS = 4.5V, ID = 2A  

VDS = 4.5V, ID = 2.1A  

IS=1.5A,VGS=0V  

Zero gate voltage drain current  

80  

89  

11  

0.8  

105  

125  

Drain-source on-state  

resistancea  

RDS(on)  

Forward transconductancea  

Diode forward voltage  

Dynamic  

gfs  

VSD  

1.3  

V

Input capacitance  

Output capacitance  

Reverse transfer capacitanceb  

Total gate charge  

Gate-source charge  

Gate-drain charge  

Gate resistance  

Ciss  

Coss  

Crss  

Qg  

214  

31  

300  

pF  

pF  

VDS = 25V,VGS =0V,  

f=1MHz  

12.6  

2.6  

0.6  

0.8  

1.3  

pF  

nC  

3.3  

3

VDS = 25V,VGS = 4.5V,  

ID = 3A  

nC  

nC  

Qgs  

Qgd  

Rg  

f=1MHz  

Ω

Switchingb  

Turn-on delay time  

Rise time  

td(on)  

tr  

2.3  

2.4  

16.5  

2

ns  

ns  

ns  

ns  

VDS= 25V  

RL=6Ω, ID ≈ 1A,  

VGEN= 10V,Rg=3Ω  

td(off)  

tf  

Turn-off delay time  

Fall time  

Drain-source body diode characteristics  

Continuous Source-Drain Diode

 

Current  

IS  

Tc=25

℃  

3

A

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 5 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2

友台半导体有限公司  

R

UMW AO3422A  

UMW  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

Max.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min.  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

Max.  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

e1  

L

0.950 T

Y

P

.  

0.550 REF.  

0.037 T

Y

P

.  

0.022 REF.  

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8°  

3

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