UMW-Youtai-Semiconductor-Co—Ltd–AO3423A

R

UMW  

UMW AO3423A  

SOT-23-3L Plastic-Encapsulate MOSFETS  

P-Channel 20-V(D-S) MOSFET  

V(BR)DSS  

-20 V  

RDS(on)MAX  

ID  

120mΩ@-4.5V  

150mΩ@-2.5V  

-2A  

FEATURE  

APPLICATION  

※

TrenchFET Power MOSFET  

※

ESD Protected 2.0KV  

※

Load Switch for Portable Devices  

※

DC/DC Converter  

MARKING  

Equivalent Circuit  

SOT

–

23  

1. GATE  

2. SOURCE  

3. DRAIN  

Maximum ratings ( Ta=25

℃

unless otherwise noted)  

Parameter Symbol  

Value  

-20  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

VDS  

VGS  

ID  

V

A

±12  

Continuous Drain Current  

Pulsed Diode Curren  

-2  

IDM  

PD  

-18  

Power Dissipation  

1.4  

W

Thermal Resistance from Junction to Ambient (t≤5s)  

Operating Junction  

RθJA  

TJ  

125  

℃

/W  

150  

℃

Storage Temperature  

TSTG  

-55~+150  

1

友台半导体有限公司  

R

UMW  

UMW AO3423A  

SOT-23-3L Plastic-Encapsulate MOSFETS  

MOSFET ELECTRICAL CHARACTERISTICS  

S

al Characteristics

 

(Ta = 25

℃

Unless Otherwise Noted)  

Parameter  

Symbol Test

 

Condition  

Min  

Typ  

Max  

Unit  

Static  

Drain-source breakdown voltage  

Gate-source threshold voltage  

Gate-source leakage  

V(BR)DSS  

VGS(th)  

IGSS  

VGS = 0V, ID = -250µA  

VDS =VGS, ID = -250µA  

VDS =0V, VGS = ±12V  

VDS = -20V, VGS =0V  

VGS = -4.5V, ID = -2.5A  

VGS = -2.5V, ID = -2A  

VDS = -4.5V, ID = -2.5A  

IS=-1A,VGS=0V  

-20  

V

V

-0.4  

-1  

±10  

-1  

µA  

µA  

mΩ  

mΩ  

S

Zero gate voltage drain current  

IDSS  

59  

72  

7

120  

150  

Drain-source on-state resistancea  

Forward transconductancea  

RDS(on)  

gfs  

Diode forward voltage  

Dynamic  

VSD  

-0.8  

-1.2  

V

Input capacitance  

Ciss  

Coss  

Crss  

Qg  

325  

63  

pF  

pF  

VDS = -4.5V,VGS =0V,  

f=1MHz  

Output capacitance  

Reverse transfer capacitanceb  

Total gate charge  

37  

pF  

nC  

3.2  

0.6  

0.9  

11.2  

VDS = -10V,VGS = -4.5V,  

ID = –2A  

nC  

nC  

Gate-source charge  

Gate-drain charge  

Qgs  

Qgd  

Rg  

Gate resistance  

Switchingb  

f=1MHz  

Ω

Turn-on delay time  

td(on)  

tr  

11  

5.5  

22  

8

ns  

ns  

ns  

ns  

VDD= -10V  

RL=3Ω, ID ≈ -1A,  

VGEN=- 4.5V,Rg=3Ω  

Rise time  

Turn-off delay time  

td(off)  

tf  

Fall time  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

trr  

If=-2A, dl/dt=100A/us  

If=-2A, dl/dt=100A/us  

ns  

nC  

grr  

Note :  

1. Repetitive Rating : Pulse width limited by maximum junction temperature.  

2. Surface Mounted on FR4 Board, t < 5 sec.  

3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.  

4. Guaranteed by design, not subject to production testing.  

2

友台半导体有限公司  

R

UMW  

UMW AO3423A  

SOT-23-3L Plastic-Encapsulate MOSFETS  

3

友台半导体有限公司