UMW-Youtai-Semiconductor-Co—Ltd–AO4405
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R
UMW
AO4405
P-Channel MOSFET
The AO4405 uses advanced trench technology to provide
excellent R
DS(ON)
with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
General Features
V
DS
= -30V I
D
= -6 A
R
DS(ON)
< 45mΩ @ V
GS
=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Absolute Maximum Ratings
T
A
=25
°
C
u
nless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
V
-30
V
Gate-Source Voltage
V
GS
±20
V
A
T
A
=25
°
C
T
A
=70
°
C
-6
-5.1
-30
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
SPIKE
17
A
mJ
V
Avalanche energy L=0.1mH
C
14
V
DS
Spike
10
ꢀ
s
-36
T
A
=25
°
C
T
A
=70
°
C
3.1
P
D
W
°C
Power Dissipation
B
2
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
Units
°
C
/W
°
C
/W
°
C
/W
Maximum Junction-to-Ambient
A
t
≤
10s
40
75
24
R
θ
JA
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Steady-State
Steady-State
59
R
θ
JL
16
1
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
Electrical Characteristi
c
=
s
2
5
(
T
°
C
u
nless otherwise noted)
J
P
arameter
Conditions
Min
Typ
Max Units
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
DS
=-30V, V
GS
=0V
-1
I
DSS
Zero Gate Voltage Drain Current
µ
A
-5
T
J
=55
°
C
V
DS
=0V, V
GS
= ±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.5
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=-250
µ
A
-1
-1.5
V
GS
=-10V, V
DS
=-5V
-30
A
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-5A
m
Ω
m
Ω
33
53
45
75
R
DS(ON)
Static Drain-Source On-Resistance
V
DS
=-5V, I
D
=-6A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
14
S
V
I
S
=-1A,V
GS
=0V
-0.8
-1
Maximum Body-Diode Continuous Current
Input Capacitance
-3.5
A
C
iss
C
oss
C
rss
R
g
520
100
65
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
3.5
7.5
9.2
4.6
1.6
2.2
7.5
11.5
11
6
Q
g
(10V)
Total Gate Charge
Q
g
(4.5V)
Total Gate Charge
nC
nC
nC
nC
ns
ns
ns
ns
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
Q
gs
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Q
gd
t
D(on)
t
t
r
5.5
5.5
V
GS
=-10V, V
DS
=-15V, R
L
=2.5
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
19
7
t
rr
I
F
=-6A, dI/dt=100A/
µ
s
I
F
=-6A, dI/dt=100A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11
ns
Q
rr
nC
5.3
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
2
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
Typical characteristic
30
25
20
15
10
5
35
-8V
V
DS
=-5V
-6V
30
25
20
15
10
5
-5V
V
GS
=-4.5V
-4V
125
°
C
25
°
C
V
GS
=-3.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
80
1.8
1.6
1.4
1.2
1
V
GS
=-10V
I
D
=-6A
70
60
50
40
30
20
10
V
GS
=-4.5V
V
GS
=-
4.5V
I
D
=-4A
V
GS
=-10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Juncti
o
n
Temperature
120
100
80
1.0E+02
1.0E+01
I
D
=-6A
1.0E+00
125
°
C
25
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
60
40
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-V
SD
(Volts)
-V
GS
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
Typical characteristic
800
700
600
500
400
300
200
100
0
V
DS
=-15V
I
D
=-6A
8
C
iss
6
4
2
0
C
oss
C
rss
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
(nC)
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
100.0
10.0
1.0
T
A
=25
°
C
T
A
=100
°
C
10
µ
s
100
µ
s
T
A
=150
°
C
R
DS(ON)
limited
T
A
=125
°
C
1ms
10.0
10ms
0.1
T
J(Max)
=150
°
C
T
A
=25
°
C
10s
DC
0.0
1.0
0.01
0.1
1
10
100
1
10
Time in avalanche, t
A
(
µ
s)
Figure 9: Single Pulse Avalanche capability (Note C)
100
1000
-V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe
O
p
e
r
a
t
i
n
g
A
r
e
a
(
N
o
t
e
F
)
10000
1000
100
10
T
A
=25
°
C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
4
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
Typical characteristic
In descending order
D=T
on
/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
1
0.1
R
θ
JA
=75
°
C/W
P
D
0.01
Single Pulse
0.001
T
on
T
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
5
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
f
t
d(off)
t
d(on)
t
r
Vgs
–
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 LI
A
2
R
Vds
Vds
Id
BV
DSS
Vgs
Vdd
+
Vgs
VDC
Id
Rg
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
DUT
Vgs
-Isd
t
rr
Vds –
L
-I
F
Isd
dI/dt
-I
RM
+
Vdd
Vgs
VDC
Vdd
–
-Vds
Ig
6
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
P
A
C
KAGE
O
U
TL
INE
D
IMEN
S
I
O
N
S
SO
P-8
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
L
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
1.270(BSC)
0.050(BSC)
0.050
0.400
1.270
0.016
θ
0°
8°
0°
8°
7
UTD Semiconductor Co.,Limited
R
UMW
AO4405
P-Channel MOSFET
Marking
(“xxxx”
代表年份周期
)
Ordering information
Package
SOP-8
Deliverymode
Tape and
reel
Baseqty
3000
Order code
UMW AO4405
8
UTD Semiconductor Co.,Limited
