UMW-Youtai-Semiconductor-Co—Ltd–AO4406A
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R
UMW
AO4406A
11N06C
30V N-Channel Enhancement Mode MOSFET
Description
The AO4406A use
s advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
V
DS
= 30V
I
D
=12 A
R
DS
(
O
N)
< 13mΩ @ V
GS
=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
30
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
12
A
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
8
30
20
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
22
T
o
tal Power Dissipation
4
4.5
W
P
D
@T
A
=25
℃
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
-55 to 150
-55 to 150
50
℃
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
30
1
友台半导体有限公司
R
UMW
AO4406A
11N06C
30V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
Min.
30
Typ.
—
Max.
—
Unit
V
Drai
n-Source Breakdown Voltage
BVDSS
T
e
mperature Coefficient
—
0.027
10
—
△
BV
DSS
/
△
T
J
V/
℃
—
13
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=8A
—
1.2
12
1.5
16
2.5
m
Ω
R
DS(ON)
V
GS(th)
V
△
V
GS(th)
V
GS(th)
T
e
mperature Coefficient
V
GS
=V
DS
, I
D
=250uA
—
-5.8
—
mV/
℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
5
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
I
DSS
Drain-Source Leakage Current
uA
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
nA
S
±
100
—
V
DS
=5V , I
D
=10A
5.8
2.2
12.6
4.2
5.1
6.2
59
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
3.8
17.6
5.9
7.1
12.4
106
55
Q
g
T
o
tal Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=15V , V
GS
=4.5V , I
D
=10A
nC
ns
Turn-On Delay Time
Rise Time
V
DD
=15V , V
GS
=10V , R
G
=3.3
I
D
=10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
27.6
8.4
960
139
87
16.8
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
Output Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Reverse Transfer Capacitance
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
10.3
42
A
A
V
G
=V
D
=0V , Force Current
I
SM
—
V
SD
t
rr
—
1.2
—
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
12.5
5
nS
nC
I
F
=10A
,
dI/dt=100A/µs
,
Q
rr
—
T
J
=25
℃
Note :
1 .The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3 .The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10
V
,
L=0.1mH,I
AS
=35A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
友台半导体有限公司
R
UMW
AO4406A
11N06C
30V N-Channel Enhancement Mode MOSFET
Typical Characteristics
12
I
D
=10A
35
V
GS
=7V
11
9
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
28
21
14
7
8
6
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
12
10
8
T
J
=150
℃
T
J
=25
℃
6
4
2
0
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
友台半导体有限公司
R
UMW
AO4406A
11N06C
30V N-Channel Enhancement Mode MOSFET
10000
1000
100
100.00
F=1.0MHz
Ciss
100us
10.00
1ms
10ms
100ms
1.00
Coss
Crss
0.10
DC
T
A
=25
o
C
Single Pulse
10
0.01
0.01
1
5
9
13
17
21
25
0.1
1
10
100
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching Waveform
Fig.10 Switching Time Waveform
4
友台半导体有限公司
R
UMW
AO4406A
11N06C
30V N-Channel Enhancement Mode MOSFET
Marking
(“xxxx”
代表年份周期
)
Ordering information
Order code
Package
SOP-8
Baseqty
3000
Deliverymode
Tape and reel
UMW AO4406A
5
友台半导体有限公司
